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STN633
STN633
STN633
STN6335
5
5
5
DualNChannelEnhancementModeMOSFET
0.95A
DESCRIPTION
Part
Part
Part
PartNumber
N umber
Number
Number
Package
Package
Package
Package
Part
Part
Part
PartMarking
M arking
Marking
Marking
STN6335
SOT-363/SC70-6L
YA
FEATURE
FEATURE
FEATURE
FEATURE
20V/0.95A,R
DS(ON)
=380mΩ@VGS=4.5V
20V/0.75A,R
DS(ON)
=450mΩ@VGS=2.5V
20V/0.65A,R
DS(ON)
=800mΩ@VGS=1.8V
Superhighdensitycelldesignforextremely
lowR
DS(ON)
Exceptionallowon-resistanceandmaximum
DCcurrentcapability
SOT-363/SC70-6Lpackagedesign
35YW
D1G2S2
S1GD2
DESCRIPTION
DESCRIPTION
DESCRIPTION
STN6335isthedualN-Channelenhancementmodepowerfieldeffecttransistorwhich
isproducedusinghighcelldensity,DMOStrenchtechnology.Thishighdensityprocess
isespeciallytailoredtominimizeon-stateresistanceandprovidesuperiorswitching
performance.Thesedevicesareparticularlysuitedforlowvoltageapplicationssuchas
notebookcomputercircuitswherehigh-sideswitching,lowin-linepowerlossand
resistancetotransientsareneeded.
PIN
C ONFIGURATION
PIN
CONFIGURATION
PIN
PINCONFIGURATION
CONFIGURATION
SOT-363
SOT-363
SOT-363
SOT-363/
/
S C70-6L
/
SC70-6L
/SC70-6L
SC70-6L
�
�
�
�
�
�
Y:
Y ear
Y:
Year
Y:
Y:Year
Year
A:
P rocess
A:
Process
A:
A:Process
ProcessCode
ORDERING
ORDERING
ORDERING
ORDERINGINFORMATION
※ProcessCode:A~Z(1~26);a~z(27~52)
STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
http://www.stansontech.com
I NFORMATION
INFORMATION
INFORMATION
C ode
Code
Code
STN63352008.V1
Page 2
STN633
STN633
STN633
STN6335
5
5
5
DualNChannelEnhancementModeMOSFET
0.95A
ABSOULTE
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol
Typical
Typical
Typical
Typical
Unit
Unit
Unit
Unit
Drain-SourceVoltage
V
DSS
20
V
Gate-SourceVoltage
V
GSS
±12
V
ContinuousDrainCurrent(TJ=150℃)
TA=25℃
I
D
1.2
A
TA=80℃
0.9
PulsedDrainCurrent
I
DM
4
A
ContinuousSourceCurrent(DiodeConduction)
IS0.6
A
PowerDissipation
TA=25℃
P
D
0.35
W
TA=70℃
0.19
OperationJunctionTemperature
TJ-55/150
℃
StorageTemperatureRange
T
STG
-55/150
℃
ThermalResistance-Junctionto
Ambient
T≦10sec
R
θJA
360
℃/W
SteadyState
400
ABSOULTE
ABSOULTE
ABSOULTEMAXIMUM
M AXIMUM
MAXIMUM
MAXIMUMRATINGS
R ATINGS
RATINGS
RATINGS(Ta=25℃Unlessotherwisenoted)
STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
http://www.stansontech.com
STN63352008.V1
Page 3
STN633
STN633
STN633
STN6335
5
5
5
DualNChannelEnhancementModeMOSFET
0.95A
ELECTRICAL
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol
Condition
Condition
Condition
Condition
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Max
Max
Max
Max
Unit
Unit
Unit
Unit
OFF
OFF
OFF
OFFCHARACTERISTICS
C HARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS
Drain-SourceBreakdown
Voltage
V
(BR)DSS
V
GS
=0V,ID=250uA
20
V
GateThresholdVoltage
V
GS(th)
V
DS
=VGS,ID=250uA
0.35
1.0
V
GateLeakageCurrent
I
GSS
V
DS
=0V,V
GS
=±12V
±100
nA
ZeroGateVoltageDrain
Current
I
DSS
V
DS
=20V,V
GS
=0V
1
uA
V
DS
=20V,V
GS
=0V
TJ=55℃
5
On-StateDrainCurrent
I
D(on)VDS
≦4.5V,V
GS
=5V
2
A
Drain-sourceOn-Resistance
R
DS(on)
V
GS
=4.5V,ID=0.95A
260
380
mΩ
V
GS
=2.5V,ID=0.75A
320
450
V
GS
=1.8V,ID=0.65A
420
800
ForwardTransconductance
g
fs
V
DS
=10V,ID=1.2A
2.6
S
DiodeForwardVoltage
V
SD
IS=0.5A,V
GS
=0V
0.8
1.2
V
D
D
D
DYNAMIC
Y NAMIC
YNAMIC
YNAMIC
TotalGateCharge
Q
g
V
DS
=10V,V
GS
=4.5V,V
DS
=0.7A
1.2
1.5
nC
Gate-SourceCharge
Qgs0.2
Gate-DrainCharge
Qgd0.3
InputCapacitance
C
iss
V
DS
=10V,V
GS
=0V
f=1MHz
110
pF
OutputCapacitance
C
oss
34
ReverseTransferCapacitance
C
rss
16
Turn-OnTime
T
d(on)
VDD=10V,RL=10Ω,ID=1.0A,
VGEN=4.5V,RG=6Ω
5
10
nS
tr8
15
Turn-OffTime
T
d(off)
10
18
tf1.2
2.8
ELECTRICAL
ELECTRICAL
ELECTRICALCHARACTERISTICS
C HARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS(Ta=25℃Unlessotherwisenoted)
STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
http://www.stansontech.com
STN63352008.V1
Page 4
STN633
STN633
STN633
STN6335
5
5
5
DualNChannelEnhancementModeMOSFET
0.95A
TYPICAL
TYPICAL
TYPICAL
TYPICALCHARACTERICTICS
C HARACTERICTICS
CHARACTERICTICS
CHARACTERICTICS
STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
http://www.stansontech.com
STN63352008.V1
Page 5
STN633
STN633
STN633
STN6335
5
5
5
DualNChannelEnhancementModeMOSFET
0.95A
TYPICAL
TYPICAL
TYPICAL
TYPICALCHARACTERICTICS
C HARACTERICTICS
CHARACTERICTICS
CHARACTERICTICS
STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
http://www.stansontech.com
STN63352008.V1
Page 6
STN633
STN633
STN633
STN6335
5
5
5
DualNChannelEnhancementModeMOSFET
0.95A
SOT363
SOT363
SOT363
SOT363(sc70-6L)
( sc70-6L)
(sc70-6L)
(sc70-6L)PACKAGE
P ACKAGE
PACKAGE
PACKAGEOUTLINE
O UTLINE
OUTLINE
OUTLINE
STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
http://www.stansontech.com
STN63352008.V1
Page 7
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