Page 1
DESCRIPTION
■
The STN2302 is the N-Channel logic enhancement
mode power field effect transistor is produced using
high cell density. advanced trench technology to
provide excellent R
operation gate as 1.8V.
This device is suitable for use as a load switch or
other general applications.
DS(ON). low gate charge and
STN2302S-TRG ROHS Compliant This is Halogen
Free
20V N-Channel Enhancement Mode MOSFET
■
FEATURE
20V/4.0A, R
20V/3.0A, R
Super high density cell design for extremely low
Gate Charge
Exceptional on-resistance and Maximum DC
current capability
■
APPLICATIONS
Power Management in Note book
Portable Equipment
Load Switch
PIN CONFIGURATION
■
PART NUMBER INFORMATION
■
ST N 2302 S - TR G
a b c d e f
Drain
Gate
SOT-23
Top View
Source
a : Company name.
b : Channel type.
c : Product Serial number.
d : Package code
e : Handling code
f : Green product code
STN2302
=50mΩ(typ.)@VGS =4.5V
DS(ON)
=65mΩ(typ.)@VGS =2.5V
DS(ON)
D
G
S
N-Channel Enhancement Mode MOSFET
STN2302 Rev.1.0
Copyright © Semtron Microtech Corp. www.semtron-micro.com
1
Page 2
ORDERING INFORMATION
■
Part Number Package Code Handling Code Shipping
STN2302S-TRG S : SOT-23 TR : Tape&Reel 3K/Reel
※
Year Code : 0 ~ 9, 2010 : 0
※
Week Code : A(1~2) ~ Z(53~54)
※
SOT-23 : Only available in tape and reel packaging.
ABSOLUTE MAXIMUM RATINGS
■
Symbol Parameter Typical Unit
V
Drain-Source Voltage 20 V
DSS
V
Gate-Source Voltage ±12 V
GSS
ID
IDM Pulsed Drain CurrentB 14 A
PD Power Dissipation
TJ Operation Junction Temperature -55 to150 °C
Continuous Drain Current (TC=25°C) A 4.6 A
Continuous Drain Current (T
(TA = 25°C Unless otherwise noted )
=70°C) A
C
STN2302
V
=4.5V
GS
T
A=25°C
T
=70°C
A
A
3.8
1.0
0.7
W
T
Storage Temperature Range -55 to150 °C
STG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
■
Symbol Parameter Typ Max Unit
R
Thermal Resistance-Junction to Ambient
θJA
R
θJC
Thermal Resistance Junction to LeadA
A
Steady-State
Steady-State
- 125 °C/W
- 85 °C/W
STN2302 Rev.1.0
Copyright © Semtron Microtech Corp. www.semtron-micro.com
2
Page 3
STN2302
ELECTRICAL CHARACTERISTICS
■
Symbol Parameter Condition Min Typ Max Unit
Static Parameters
V
V
I
GSS
I
DSS
R
(BR)DSS
Gate Threshold Voltage VDS=VGS,ID=250μA 0.5 1.0 V
GS(th)
Gate Leakage Current VDS=0V,VGS=±12V ±100 nA
Drain-source On-ResistanceB
DS(ON)
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Gfs Forward Transconductance VDS=5V,ID=3A 10.5 S
Source-Drain Doide
VSD Diode Forward Voltage IS=1.0A,VGS=0V 0.7 1.2 V
IS Continuous Source CurrentAD 3.6 A
(TA = 25°C Unless otherwise noted )
VGS=0V,ID=250μA 20 V
VDS=20V,VGS=0V 1
=20V,VGS=0V
V
DS
T
=55°C
J
V
=4.5V,ID=4.0A
GS
V
=2.5V,ID=3.0A
GS
40
54
5
50
75
μA
mΩ
Dynamic Parameters
Qg Total Gate Charge 4.7 6.6
Qgs Gate-Source Charge 0.68 0.96
Qgd Gate-Drain Charge
C
Input Capacitance 296 415
iss
C
Output Capacitance 44 62
oss
C
Reverse Transfer Capacitance
rss
t
1.4 2.8
d(on)
Turn-On Time
tr
t
12.4 25
d(off)
Turn-Off Time
tf
Note:
A. The value of R
with T
B. The data tested by pulsed , pulse width ≦ 300uS , duty cycle ≦ 2%
C. The EAS data shows Max. rating . The test condition is V
D. The data is theoretically the same as I
=25°C.
A
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment
θJA
and IDM , in real applications , should be limited by total power dissipation.
D
=10V
V
DS
V
=4.5V
GS
I
=3.0A
D
=15V
V
DS
V
=0V
GS
f=1MH
V
I
V
R
z
=10V
DD
=3.0A
D
=4.5V
GEN
=3.3Ω
G
=-25V,VGS=-10V,L=0.1mH.
DD
nC
1.3 1.8
pF
35 49
40 72
nS
5.6 11
The products and product specifications contained herein are subject to change without notice to improve
performance characteristics. Consult us, or our representatives before use, to confirm that the information in
this datasheet is up to date
We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use
of any information and circuitry in this datasheet.
STN2302 Rev.1.0
Copyright © Semtron Microtech Corp. www.semtron-micro.com
3
Page 4
=2.5V
TYPICAL CHARACTERISTICS
■
Output Characteristics
20
V
=5V
GS
15
4.5V
3V
10
5
-Drain Current(A)
D
I
V
VGS=1.8V
0
00.511.522.5
-Drain Source Voltage(V)
V
DS
GS
Drain Source On Resistance
100
80
=4.5V
V
GS
60
(mΩ)
VGS=2.5V
DS(ON)
R
40
20
Normalized Threshold
0
024681012
I
-Drain Current(A)
D
STN2302
Drain-Source On Resistance
120
=3A
I
D
100
80
(mΩ)
DS
60
R
40
25°C
20
0246810
V
GS
Gate Threshold Voltage
1.2
1
0.8
0.6
0.4
Voltage
0.2
0
-50 -25 0 25 50 75 100 125 150
Tj-Junction Temperature(°C)
125°C
-Gate Source Voltage(V)
IDS=250μA
10
Gate Charge
1.2
8
Gate Threshold Voltage
1
IDS=250μA
0.8
6
(V)
GS
4
V
2
0
02468101214
-Gate Charge(nC)
Q
G
0.6
0.4
Voltage
0.2
Normalized Threshold
0
-50 -25 0 25 50 75 100 125 150
Tj-Junction Temperature(°C)
STN2302 Rev.1.0
Copyright © Semtron Microtech Corp. www.semtron-micro.com
4
Page 5
TYPICAL CHARACTERISTICS
■
Capacitance
600
500
400
300
C(pF)
200
100
Crss
0
0 5 10 15 20 25
-V
Coss
-Drain Source Voltage(V)
DS
Ciss
10
-Sourc e Current(A)
S
I
0.1
Power Dissipation
1.4
1.2
1
0.8
0.6
0.4
Ptot-Power(W)
0.2
0
0 20406080100120140160
-Drain Current(A)
D
I
STN2302
Source Drain Diode Forward
Source Drain Diode Forward
1.00E+01
1.00E+00
1.00E-01
1.00E-02
1
1.00E-03
1.00E-04
-Source Current(A)
1.00E-05
S
I
1.00E-06
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
6
5
4
3
2
1
0
0 20406080100120140160
0 0.2 0.4 0.6 0.8 1 1.2
V
-Source Drain Voltage(V)
SD
SD
-Source Drain Voltage(V)
V
Drain Current
TJ-Junction Temperature(°C)
T
-Junction Temperature(°C)
J
Thermal Transient Impedance
10
Duty=0.5, 0.3, 0.1, 0.05, 0.02, 0.01
1
0.1
0.01
Thermal Resistance
Normalized Transient
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
Single Pulse
Square W ave Puls e Duration(Sec)
STN2302 Rev.1.0
Copyright © Semtron Microtech Corp. www.semtron-micro.com
5
Page 6
SOT-23 PACKAGE DIMENSIONS
■
Symbol
Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 0.900 1.150 0.035 0.045
A1 0.000 0.100 0.000 0.004
A2 0.900 1.050 0.035 0.041
b 0.300 0.500 0.012 0.020
c 0.080 0.150 0.003 0.006
D 2.800 3.000 0.110 0.118
E 1.200 1.400 0.047 0.055
E1 2.250 2.550 0.089 0.100
e 0.950 TYP. 0.037 TYP
e1 1.800 2.000 0.071 0.079
L1 0.550 REF. 0.022 REF.
L1 0.300 0.500 0.012 0.020
θ 0° 8° 0° 8°
STN2302
STN2302 Rev.1.0
Copyright © Semtron Microtech Corp. www.semtron-micro.com
6
Page 7
Loading...