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STN4412
N Channel Enhancement Mode MOSFET
6.8A
DESCRIPTION
STN4412 is the N-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as power management and other
battery powered circuits where high-side switching.
PIN CONFIGURATION
SOP-8
FEATURE
z 30V/6.8A, R
z 30V/5.6A, R
z Super high density cell design for
extremely low R
z Exceptional on-resistance and
maximum DC current capability
z SOP-8 package design
DS(ON)
@V
DS(ON)
@V
DS(ON)
= 28mΩ
GS = 10V
= 36mΩ
GS = 4.5V
PART MARKING
SOP-8
STN4412
S Y A
ORDERING INFORMATION
Part Number Package Part Marking
STN4412S8RG SOP-8P STN4412
STN4412S8TG SOP-8P STN4412
※ Process Code : A ~ Z ; a ~ z
※ STN4412S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4412 2007. V1
Page 2
ABSOULTE MAXIMUM RATINGS (Ta = 25
Drain-Source Voltage VDSS 30 V
Gate-Source Voltage VGSS ±20 V
STN4412
N Channel Enhancement Mode MOSFET
※ STN4412S8TG S8 : SOP-8 ; T : Tube ; G : Pb – Free
℃
Unless otherwise noted )
Parameter Symbol Typical Unit
6.8A
Continuous Drain Current
(TJ=150℃)
Pulsed Drain Current IDM 30 A
Continuous Source Current (Diode Conduction) IS 2.3 A
Power Dissipation
Operation Junction Temperature TJ 150
Storgae Temperature Range TSTG -55/150
Thermal Resistance-Junction to Ambient RθJA 80
TA=25℃
TA=70℃
TA=25℃
TA=70℃
ID
PD
6.8
5.6
2.8
1.6
W
℃
℃
℃
A
/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4412 2007. V1
Page 3
STN4412
N Channel Enhancement Mode MOSFET
6.8A
ELECTRICAL CHARACTERISTICS ( Ta = 25
Parameter Symbol Condition Min Typ Max Unit
Static
Drain-Source
Breakdown Voltage
Gate Threshold
Voltage
V
(BR)DSS
V
VGS=0V,ID=250uA 30 V
VDS=VGS,ID=250uA 1.0 3.0 V
GS(th)
℃
Unless otherwise noted )
Gate Leakage Current I
Zero Gate Voltage
Drain Current
On-State Drain
Current
Drain-source OnResistance
Forward
Transconductance
Diode Forward Voltage VSD I
VDS=0V,VGS=±20V
GSS
VDS=24V,VGS=0V 1
I
DSS
I
D(on)
R
DS(on)
gfs V
V
=24V,VGS=0V
DS
T
J
≧5V,VGS=10V
V
DS
V
=10V,ID=6.8A
GS
=6.0V,ID=5.6A
V
GS
=15V,ID=6.2AV 13 S
DS
=2.3A,VGS=0V 0.8 1.2 V
S
=85℃
5
25 A
22
30
±100
28
36
nA
uA
mΩ
Dynamic
Total Gate Charge Qg 16 24
=15V,VGS=10V
V
Gate-Source Charge Qgs 3
Gate-Drain Charge Qgd
Input Capacitance
Output Capacitance
Reverse
TransferCapacitance
Turn-On Time
Turn-Off Time
C
450
iss
240
C
oss
C
rss
t
d(on)
tr
t
d(off)
tf
DS
≡
I
2A
D
DS ==15V,VGS=0V
V
F=1MHz
=15V,RL=15Ω
V
DD
=1A,V
I
D
R
GEN
=6Ω
G
=-10V
2.5
38
15 20
6 12
10 20
40 80
nC
pF
nS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4412 2007. V1
Page 4
STN4412
N Channel Enhancement Mode MOSFET
6.8A
TYPICAL CHARACTERICTICS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4412 2007. V1
Page 5
TYPICAL CHARACTERICTICS
STN4412
N Channel Enhancement Mode MOSFET
6.8A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4412 2007. V1
Page 6
PACKAGE OUTLINE SOP-8P
STN4412
N Channel Enhancement Mode MOSFET
6.8A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4412 2007. V1
Page 7
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