Page 1
STN4
STN4
STN4
STN442
4 2
42
42D
D
D
D
NChannelEnhancementModeMOSFET
37.0A
DESCRIPTION
FEATURE
FEATURE
FEATURE
FEATURE
60V/20.0A,R
DS(ON)
=24mΩ(Typ.)
@VGS=10V
60V/20.0A,R
DS(ON)
=31mΩ
@VGS=4.5V
Superhighdensitycelldesignfor
extremelylowR
DS(ON)
Exceptionalon-resistanceand
maximumDCcurrentcapability
TO-252,TO-251packagedesign
DESCRIPTION
DESCRIPTION
DESCRIPTION
STN442DisusedtrenchtechnologytoprovideexcellentRDS(on)andgatecharge.
ThosedevicesaresuitableforuseasloadswitchorinPWMapplications.
PIN
C ONFIGURATION
PIN
CONFIGURATION
PIN
PINCONFIGURATION
CONFIGURATION(D-PAK)
( D-PAK)
(D-PAK)
(D-PAK)
TO-252
TO-252
TO-252
TO-252TO-251
PART
PART
PART
PARTMARKING
M ARKING
MARKING
MARKING
T O-251
TO-251
TO-251
�
�
�
�
�
Y:
Y ear
Year
YearCode
C ode
Code
CodeA:
Y:
Y:
Y:Year
STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
www.stansontech.com
A :
P rocess
A:
Process
A:Process
ProcessCode
C ode
Code
Code
Copyright©2009,StansonCorp.
STN442D2009.V1
Page 2
STN4
STN4
STN4
STN442
4 2
42
42D
D
D
D
NChannelEnhancementModeMOSFET
37.0A
ABSOULTE
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol
Typical
Typical
Typical
Typical
Unit
Unit
Unit
Unit
Drain-SourceVoltage
VDSS60V
Gate-SourceVoltage
VGSS
±20
V
ContinuousDrainCurrent(TJ=150
℃
)
TA=25℃
TA=70
℃
ID
37.0
26.0
A
PulsedDrainCurrent
IDM60A
ContinuousSourceCurrent(DiodeConduction)
IS32A
PowerDissipation
TA=25℃
TA=70
℃
PD
60
30
W
OperationJunctionTemperature
TJ
175
℃
StorgaeTemperatureRange
TSTG
-55/175
℃
ThermalResistance-JunctiontoAmbient
RθJA
62
℃
/W
ABSOULTE
ABSOULTE
ABSOULTEMAXIMUM
M AXIMUM
MAXIMUM
MAXIMUMRATINGS
R ATINGS
RATINGS
RATINGS(Ta=25
℃
Unlessotherwisenoted)
STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
www.stansontech.com
Copyright©2009,StansonCorp.
STN442D2009.V1
Page 3
STN4
STN4
STN4
STN442
4 2
42
42D
D
D
D
NChannelEnhancementModeMOSFET
37.0A
ELECTRICAL
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol
Condition
Condition
Condition
Condition
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Max
Max
Max
Max
Unit
Unit
Unit
Unit
Static
Static
Static
Static
Drain-Source
BreakdownVoltage
V
(BR)DSS
V
GS
=0V,ID=250mA
60
V
GateThreshold
Voltage
V
GS(th)
V
DS
=V
GS
,ID=250uA
13V
GateLeakageCurrent
I
GSSVDS
=0V,V
GS
=±20V
100
nA
ZeroGateVoltage
DrainCurrent
I
DSS
V
DS
=48V,V
GS
=0V
1
uA
V
DS
=48V,V
GS
=0V
TJ=55℃
5
On-StateDrain
Current
I
D(on)
V
DS
≧
5V,V
GS
=10V
60
A
Drain-sourceOnResistance
R
DS(on)
V
GS
=10V,ID=20A
V
GS
=4.5V,ID=20A
243128
37
mΩ
Forward
Transconductance
gfs
V
DS
=5V,ID=20A
65
S
DiodeForwardVoltage
VSDIS=1.0A,V
GS
=0V
0.7
1.0
V
Dynamic
Dynamic
Dynamic
Dynamic
TotalGateCharge
Q
g
V
DS
=10V,V
DS
=30V
I
D
≡
20A
20
nC
Gate-SourceCharge
Qgs7
Gate-DrainCharge
Q
gd
9
InputCapacitance
C
iss
VDS=20V,VGS=0V
F=1MHz
1080
pF
OutputCapacitance
C
oss
160
Reverse
TransferCapacitance
C
rss
58
Turn-OnTime
t
d(on)
tr
V
DD
=20V,RL=4Ω
ID=5.0A,V
GEN
=10V
RG=1Ω
20
nS
25
Turn-OffTime
t
d(off)
tf
40
42
ELECTRICAL
ELECTRICAL
ELECTRICALCHARACTERISTICS
C HARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS(Ta=25
℃
Unlessotherwisenoted)
STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
www.stansontech.com
Copyright©2009,StansonCorp.
STN442D2009.V1
Page 4
STN4
STN4
STN4
STN442
4 2
42
42D
D
D
D
NChannelEnhancementModeMOSFET
37.0A
TYPICAL
TYPICAL
TYPICAL
TYPICALCHARACTERICTICS
C HARACTERICTICS
CHARACTERICTICS
CHARACTERICTICS
STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
www.stansontech.com
Copyright©2009,StansonCorp.
STN442D2009.V1
Page 5
STN4
STN4
STN4
STN442
4 2
42
42D
D
D
D
NChannelEnhancementModeMOSFET
37.0A
TYPICAL
TYPICAL
TYPICAL
TYPICALCHARACTERICTICS
C HARACTERICTICS
CHARACTERICTICS
CHARACTERICTICS
STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
www.stansontech.com
Copyright©2009,StansonCorp.
STN442D2009.V1
Page 6
STN4
STN4
STN4
STN442
4 2
42
42D
D
D
D
NChannelEnhancementModeMOSFET
37.0A
TYPICAL
TYPICAL
TYPICAL
TYPICALCHARACTERICTICS
C HARACTERICTICS
CHARACTERICTICS
CHARACTERICTICS
STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
www.stansontech.com
Copyright©2009,StansonCorp.
STN442D2009.V1
Page 7
STN4
STN4
STN4
STN442
4 2
42
42D
D
D
D
NChannelEnhancementModeMOSFET
37.0A
T
TO-252-2L
TO-252-2L
TO-252-2L
TO-252-2LPACKAGE
P ACKAGE
PACKAGE
PACKAGEOUTLINE
O UTLINE
OUTLINE
OUTLINESOP-8P
S OP-8P
SOP-8P
SOP-8P
STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
www.stansontech.com
Copyright©2009,StansonCorp.
STN442D2009.V1
Page 8
STN4
STN4
STN4
STN442
4 2
42
42D
D
D
D
NChannelEnhancementModeMOSFET
37.0A
TO-251
TO-251
TO-251
TO-251PACKAGE
P ACKAGE
PACKAGE
PACKAGEOUTLINE
O UTLINE
OUTLINE
OUTLINESOP-8P
S OP-8P
SOP-8P
SOP-8P
STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
www.stansontech.com
Copyright©2009,StansonCorp.
STN442D2009.V1
Page 9
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