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STP1013
Dual P Channel Enhancement Mode MOSFET
-0.45A
DESCRIPTION
STP1013 is the P-Channel enhancement mode power field effect transistors are
produced using high cell density, DMOS trench technology. This high density process is
especially tailored to minimize on-state resistance and provide superior switching
performance. These devices are particularly suited for low voltage applications such as
notebook computer power management and other bettery powered circuits where
high-side switching, low in-line power loss, and resistance to transients are needed.
PIN CONFIGURATION
SOT-523 / SC-89
PART MARKING
FEATURE
-20V/-0.45A, R
@VGS =-4.5V
-20V/-0.35A, R
@VGS =-2.5V
-20V/-0.25A, R
@VGS =-1.8V
Super high density cell design for extremely
low R
Exceptional low on-resistance and maximum
DC current capability
SOT-523 / SC89 package design
DS(ON)
DS(ON)
DS(ON)
DS(ON)
=520ohm
=700ohm
=950ohm
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STP1013 2009. V1
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STP1013
Dual P Channel Enhancement Mode MOSFET
ABSOULTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted )℃
Parameter Symbol
Typical Unit
-0.45A
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(TJ=150 )℃
TA=25℃
TA=80℃
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃
TA=70℃
Operation Junction Temperature
Storage Temperature Range
V
V
ID
IDM
IS
PD
TJ
T
STG
DSS
GSS
-20
±12
-0.45
V
V
A
-0.35
-1.0
-0.3
0.27
A
A
W
0.16
-55/150
-55/150
℃
℃
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STP1013 2009. V1
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STP1013
Dual P Channel Enhancement Mode MOSFET
-0.45A
ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted )℃
Parameter Symbol
OFF CHARACTERISTICS
Drain-Source Breakdown
V
(BR)DSS
Voltage
Gate Threshold Voltage V
Gate Leakage Current I
GS(th)
GSS
Zero Gate Voltage Drain
I
DSS
Current
On-State Drain Current I
Drain-source On-Resistance
D(on)
R
DS(on)
Forward Transconductance gfs
Diode Forward Voltage VSD
DYNAMIC
Total Gate Charge
Qg
Gate-Source Charge Qgs 0.3
Gate-Drain Charge Qgd
Condition Min Typ Max Unit
VGS=0V,ID=-250uA
VDS=VGS,ID=-250uA
-20 V
-0.35
VDS=0V,VGS=±12V
VDS=20V,VGS=0V
VDS=20V,VGS=0V
TJ=55℃
V
-4.5V,VGS=-5V
≦
DS
VGS=-4.5V,ID=-0.45A
VGS=-2.5V,ID=-0.35A
VGS=-1.8V,ID=-0.25A
VDS=-10V,ID=-0.25A
IS=-0.15A,VGS=0V
-0.7 A
420 520
580 700
750 950
0.4 S
-0.8 -1.2 V
1.5 2.0
VDS=-10V,VGS=-4.5V,
VDS=-0.6A
0.35
-0.8 V
±100 nA
-1
uA
-5
mΩ
nC
T
5 10 Turn-On Time
d(on)
tr 15 25
VDD=-10V, RL=10Ω, ID=-0.4A,
T
8 15 Turn-Off Time
d(off)
tf
VGEN=-4.5V, RG=6Ω
1.4 1.8
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STP1013 2009. V1
nS
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TYPICAL CHARACTERICTICS
STP1013
Dual P Channel Enhancement Mode MOSFET
-0.45A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STP1013 2009. V1
Page 5
TYPICAL CHARACTERICTICS
STP1013
Dual P Channel Enhancement Mode MOSFET
-0.45A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STP1013 2009. V1
Page 6
Dual P Channel Enhancement Mode MOSFET
SOT523 (SC-89) PACKAGE OUTLINE
STP1013
-0.45A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STP1013 2009. V1
Page 7
STP1013
Dual P Channel Enhancement Mode MOSFET
-0.45A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STP1013 2009. V1
Page 8
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