Datasheet STN4NF03L Datasheet (SGS Thomson Microelectronics)

STN4NF03L

N-CHANNEL 30V - 0.039Ω -6.5ASOT-223

STripFET™ II POWER M OSFET

TYPE V

DSS

R

DS(on)

I

D

STN4NF03L 30V <0.05Ω 6.5A

■ TYPICAL R

■ LOW T HRE S HOLD DRIVE

(on) = 0.039Ω

DS

DESCRIPTION

This Power Mosfet is the latest development of STMi­croelectronics unique “Single Feature Size™

” strip-

based process. The resulting transistor shows ex­tremely high packing d ens ity for low on-resistance,
rugged avalance characteristics and less critical align­ment steps therefore a remarkable manufacturing re­producibility.

APPLICATIONS

■ DC-DC & DC-AC CONVERTERS

■ DC MOTO R CONTROL (DISK DRIVES, etc.)

■ SYNCHRONOUS RECTIFICATION

2

3

2

1

SOT-223

INTERNAL SCHE M ATIC DIAGRAM

ABSOLUTE MAX IMUM RATINGS

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

I

D

I

D

I

DM

P

TOT

E

AS

T

stg

T

j

(●) Pulse width limited by safe operating area

Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)

30 V

30 V
Gate- source Voltage ±16 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C

()

Drain Current (pulsed) 26 A
Total Dissipation at TC= 25°C

6.5 A

4.5 A

3.3 W

Derating Factor 0.026 W/°C

(1)

Single Pulse Avalanche Energy 200 mJ
Storage Temperature
Operating Junction Temperature

(1) Starting Tj=25°C, ID=6.5A, VDD=15V

–55 to 175 °C

1/8December 2002

STN4NF03L

THERMAL DATA

Rthj-PCB Thermal Resistance Junction-PC Board Max (*) 38 °C/W
Rthj-PCB Thermal Resistance Junction-PCB Max (**) 100 °C/W

T

l

Note: (*) When mounted on 1 in2FR-4 board , 2 oz Cu, t<10s.
Note: (**) Minimum recommended footprint

Maximum Lead Temperature For Soldering Purpose
(1.6 mm from case for 10s)

260 °C

ELECTRICAL CHARACTE RISTICS (T

= 25 °C UNLESS OTHERWISE SPECIFIED)

CASE

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID= 250 µA, VGS= 0 30 V

Breakdown Voltage

I

DSS

I

GSS

Zero Gate Voltage
Drain Current (V

GS

Gate-body Leakage
Current (V

DS

=0)

=0)

V

= Max Rating

DS

= Max Rating, TC= 125 °C

V

DS

V

= ±16V ±100 nA

GS

10 µA

1µA

ON (1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

Resistance

V

DS=VGS,ID

=10V,ID=2A

V

GS

=5V,ID=2A

V

GS

= 250 µA

1V

0.039 0.05 Ω

0.046 0.06 Ω

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1)

g

fs

C

iss

C

oss

C

rss

Forward Transconductance
Input Capacitance
Output Capacitance 90 pF
Reverse Transfer

Capacitance

VDS=10V,ID=2 A

V

=25V,f=1MHz,VGS=0

DS

13 S

330 pF

40 pF

2/8

STN4NF03L

ELECTRICAL CHARACTE RISTICS (CONTINUED)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Q
Q
Q

t

r

g
gs
gd

Turn-on Delay Time VDD=15V,ID=2A

= 4.7Ω VGS=4.5V

R

Rise Time 100 ns
Total Gate Charge

Gate-Source Charge
Gate-Drain Charge

G

(see test circuit, Figure 3)
VDD=24V,ID=4A,

V

=10V

GS

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

Turn-off-Delay Time VDD=15V,ID=2A,

RG=4.7Ω, VGS= 4.5 V
(see test circuit, Figure 3)

t

f

Fall Time 22 ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

Source-drain Current

(2)

Source-drain Current (pulsed)

(1)

Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

ISD= 6.5 A, VGS=0

= 6.5 A, di/dt = 100 A/µs,

I

SD

VDD=15V,Tj= 150°C
(see test circuit, Figure 5)

11 ns

6.5

9nC

3.6
2

25 ns

6.5
26

1.5 V

35
25

1.4

nC
nC

A
A

ns

nC

A

Safe Operating Area

Thermal Impedence Junction-PCB

3/8

STN4NF03L

Output Characteristics

Transconductance

Transfer Characteristics

Static Drain-source On Resistance

Gate Charge vs Gate-so urc e Voltage Capac itance Variations

4/8

STN4NF03L

Normalized GateThereshold Voltage vs Temp. Normalized On Resistance vs Temperature

Source-drain Diode Forward Characteristics

5/8

STN4NF03L

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Loa d Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

6/8

P008B

SOT-223 MECHANICAL DATA

STN4NF03L

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 1.80 0.071

B 0.60 0.70 0.80 0.024 0.027 0.031

B1 2.90 3.00 3.10 0.114 0.118 0.122

c 0.24 0.26 0.32 0.009 0.010 0.013

D 6.30 6.50 6.70 0.248 0.256 0.264

e 2.30 0.090

e1 4.60 0.181

E 3.30 3.50 3.70 0.130 0.138 0.146

H 6.70 7.00 7.30 0.264 0.276 0.287

V10

A1 0.02

mm inch

o

10

o

7/8

STN4NF03L

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of u se of such inf ormat ion nor for any in fring ement of p aten ts or othe r ri ghts of th ird p arties whic h may resul t f rom
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.

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