Datasheet STN4NE03L Datasheet (SGS Thomson Microelectronics)

Page 1
STN4NE03L
N - CHANNEL 30V - 0.037Ω - 4A - SOT-223
STripFET POWER MOSFET
TYPE V
DSS
R
DS(on)
I
D
STN4NE03L 30 V < 0.05 4A
TYPICALR
EXCEPTIONALdv/dt CAPABILITY
AVALANCHERUGGEDTECHNOLOGY
100% AVALANCHETESTED
APPLICATIONORIENTED
=0.037
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latestdevelopmentof STMicroelectronics unique ” Single Feature
Size
strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS
DC MOTOR CONTROL (DISK DRIVES, etc.)
DC-DC& DC-AC CONVERTERS
SYNCHRONOUSRECTIFICATION
POWERMANAGEMENT IN
BATTERY-OPERATEDAND PORTABLE EQUIPMENT
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
DGR
V
I
D
I
D
I
DM
P
dv/dt (
T
() Pulse width limited by safe operating area (*) Limited by package (1)ISD≤ 10A, di/dt 200A/µs, VDD≤ V
August 1998
Drain-s ou r ce Voltage (VGS=0) 30 V
DS
Drain- gat e Volt ag e (RGS=20kΩ) Gate-source Vol tage ± 15 V
GS
30 V
(*) Drain Cur r en t (continu ous) at Tc=25oC4A (*) Drain Cur r en t (continu ous) at Tc=100oC2.5A
() Dr ain Curren t ( p ulsed) 16 A
Tot al Di s sipa t ion at Tc=25oC2.5W
tot
Derat ing Factor 0.02 W/
1) Peak Diode Recovery volta ge slope 6 V/ns
Storage Temperature -65 to 150
stg
T
Max. Oper ating Jun ct io n T e m pe r ature 150
j
(BR)DSS
,TjT
o
C
o
C
o
C
jMAX
1/8
Page 2
STN4NE03L
THERMAL DATA
R
thj-pcb
R
thj- amb
T
AVALANCHE CHARACTERISTICS
Symbol Para met e r Max Valu e Uni t
I
AR
E
Ther mal Resist ance Junctio n- PC Board Max Ther mal Resist ance Junctio n- ambient Max (Sur f a ce M ounted) Maximum Lead Tempera t ure For Soldering P urpose
l
Avalanch e C urr e nt , Repetit i v e o r Not-Re petitiv e (pulse w idth limited by T
Single Pulse Avalanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=15V)
j
max)
j
50 60
260
4A
20 mJ
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
OFF
Symbol Pa rameter Test Condition s Min. Typ. Max. Unit
V
(BR)DSS
Drain-sou rc e
=250µAVGS=0
I
D
30 V
Breakdown Voltage
I
I
DSS
GSS
Zer o Gat e Voltage Drain Current (V
GS
Gat e-body Le aka ge Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc=125oC
V
DS
= ± 15 V
V
GS
1
10
± 100 nA
ON ()
Symbol Pa rameter Test Condition s Min. Typ. Max. Unit
V
GS(th )
Gate Threshold
V
DS=VGSID
=250µA
11.62.5V
Voltage
R
DS(on)
I
D(on)
Stati c Drain-so urce On Resistance
VGS=10V ID=2A
=5V ID=2A
V
GS
On Stat e Drain Current VDS>I
D(on)xRDS(on)max
0.033
0.046
4A
0.05
0.06
VGS=10V
DYNAMIC
Symbol Pa rameter Test Condition s Min. Typ. Max. Unit
g
()Forward
fs
Tr anscond uctanc e
C
C
C
Input Ca paci t ance
iss
Out put C apa c itanc e
oss
Reverse Trans fer
rss
Capa cit an c e
VDS>I
D(on)xRDS(on)maxID
=2A 1 3 S
VDS=25V f=1MHz VGS= 0 V 680
160
60
950 220
85
µA µA
Ω Ω
pF pF pF
2/8
Page 3
STN4NE03L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHINGON
Symbol Pa rameter Test Condition s Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Time Rise Time
VDD=15V ID=10A
=4.7 VGS=5V
R
G
15 70
(see test circuit, figure 3)
Q
Q
Q
Total Gate Charge
g
Gat e-Sou r ce Cha rge
gs
Gate-Drain Charge
gd
VDD=24V ID=20A VGS=5V 22
7 7
SWITCHINGOFF
Symbol Pa rameter Test Condition s Min. Typ. Max. Unit
t
r(Voff)
t
t
Of f - voltag e Rise Time Fall Time
f
Cross-over Time
c
VDD=24V ID=20A
=4.7 VGS=5V
R
G
(see test circuit, figure 5)
12 33 55
SOURCE DRAIN DIODE
Symbol Pa rameter Test Condition s Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
() Pulsed: Pulse duration =300 µs, duty cycle1.5 % () Pulse widthlimited by safe operating area
Source-drain Curre nt
()
Source-drain Curre nt (pulsed)
() Fo rward On Vo lt age ISD=4A VGS=0 1.5 V
Reverse Rec overy
rr
Time Reverse Rec overy
rr
= 20 A di/dt = 100 A/µs
I
SD
=15V Tj=150oC
V
DD
(see test circuit, figure 5)
40
45 Charge Reverse Rec overy
2.2
Current
20
100
30 nC
17 46 77
4
16
ns ns
nC nC
ns ns ns
A A
ns
µC
A
Safe Operating Area ThermalImpedance
3/8
Page 4
STN4NE03L
OutputCharacteristics
Transconductance
TransferCharacteristics
StaticDrain-sourceOn Resistance
GateCharge vs Gate-sourceVoltage
4/8
CapacitanceVariations
Page 5
STN4NE03L
Normalized GateThresholdVoltagevs Temperature
Source-drainDiode Forward Characteristics
Normalized On Resistancevs Temperature
5/8
Page 6
STN4NE03L
Fig. 1: UnclampedInductiveLoad Test Circuit
Fig. 3: Switching Times Test CircuitsFor
ResistiveLoad
Fig. 2: UnclampedInductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode RecoveryTimes
6/8
Page 7
SOT-223 MECHANICAL DATA
STN4NE03L
DIM.
mm mils
MIN. TYP. MAX. MIN. TYP. MAX.
a 2.27 2.3 2.33 89.4 90.6 91.7
b 4.57 4.6 4.63 179.9 181.1 182.3
c 0.2 0.4 0.6 7.9 15.7 23.6 d 0.63 0.65 0.67 24.8 25.6 26.4
e1 1.5 1.6 1.7 59.1 63 66.9
e4 0.32 12.6
f 2.9 3 3.1 114.2 118.1 122.1
g 0.67 0.7 0.73 26.4 27.6 28.7
l1 6.7 7 7.3 263.8 275.6 287.4
l2 3.5 3.5 3.7 137.8 137.8 145.7
L 6.3 6.5 6.7 248 255.9 263.8
L
l2
e1
a
b
d
c
e4
f
C
l1
B
C
E
g
P008B
7/8
Page 8
STN4NE03L
Information furnished is believed to beaccurate and reliable. However, STMicroelectronics assumes no responsibility forthe consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication orotherwise under any patent or patent rights ofSTMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes andreplaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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