Datasheet STN4NE03 Datasheet (SGS Thomson Microelectronics)

Page 1
STN4NE03
N - CHANNEL 30V - 0.045Ω - 4A - SOT-223
STripFET POWER MOSFET
TYPE V
DSS
R
DS(on)
I
D
STN4N E03 30 V < 0.06 4A
TYPICALR
EXCEPTIONALdv/dt CAPABILITY
AVALANCHERUGGEDTECHNOLOGY
100% AVALANCHETESTED
APPLICATIONORIENTED
=0.045
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latestdevelopmentof STMicroelectronics unique ” Single Feature
Size
strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS
DC MOTOR CONTROL (DISK DRIVES, etc.)
DC-DC& DC-AC CONVERTERS
SYNCHRONOUSRECTIFICATION
POWERMANAGEMENT IN
BATTERY-OPERATEDAND PORTABLE EQUIPMENT
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
DGR
V
I
D
I
D
I
DM
P
dv/dt (
T
() Pulse width limited by safe operating area (*) Limited by package (1)ISD≤ 10A, di/dt 300A/µs, VDD≤ V
August 1998
Drain-s ou r ce Voltage (VGS=0) 30 V
DS
Drain- gat e Volt ag e (RGS=20kΩ) Gate-source Vol tage ± 20 V
GS
30 V
(*) Drain Cur r en t (continu ous) at Tc=25oC4A (*) Drain Cur r en t (continu ous) at Tc=100oC2.5A
() Dr ain Curren t ( p ulsed) 16 A
Tot al Di s sipa t ion at Tc=25oC2.5W
tot
Derat ing Factor 0.02 W/
1) Peak Diode Recovery volta ge slope 6 V/ns
Storage Temperature -65 to 150
stg
T
Max. Oper ating Jun ct io n T e m pe r ature 150
j
(BR)DSS
,TjT
o
C
o
C
o
C
jMAX
1/8
Page 2
STN4NE03
THERMAL DATA
R
thj-pcb
R
thj- amb
T
AVALANCHE CHARACTERISTICS
Symbol Para met e r Max Valu e Uni t
I
AR
E
Ther mal Resist ance Junctio n- PC Board Max Ther mal Resist ance Junctio n- ambient Max (Sur f a ce M ounted) Maximum Lead Tempera t ure For Soldering P urpose
l
Avalanch e C urr e nt , Repetit i v e o r Not-Re petitiv e (pulse w idth limited by T
Single Pulse Avalanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=25V)
j
max, δ <1%)
j
50 60
260
4A
20 mJ
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
OFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
(BR)DSS
Drain-sou rc e
=250µAVGS=0
I
D
30 V
Breakdown Voltage
I
I
DSS
GSS
Zer o Gat e Voltage Drain Current (V
GS
Gat e-body Le aka ge Current (V
DS
=0)
=0)
=MaxRating
V
DS
V
=MaxRating Tc=125
DS
o
C
= ± 20 V
V
GS
1
10
± 100 nA
ON ()
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
GS(th )
Gate Threshold
V
DS=VGSID
=250µA
234V
Voltage
R
DS(on)
Stati c Drain-so urce On
VGS=10V ID= 2 A 0.045 0. 0 6
Resistance
I
D(on)
On Stat e Drain Current VDS>I
D(on)xRDS(on)max
4A
VGS=10V
DYNAMIC
Symbol Parameter Test Condition s Min. Typ. Max. Unit
g
()Forward
fs
Tr anscond uctanc e
C
C
C
Input Ca paci t ance
iss
Out put C apa c itanc e
oss
Reverse Trans fer
rss
Capa cit an c e
VDS>I
D(on)xRDS(on)maxID
=2A 1 3.0 S
VDS=25V f=1MHz VGS= 0 V 760
150
50
1000
200
80
µA µA
pF pF pF
2/8
Page 3
STN4NE03
ELECTRICAL CHARACTERISTICS (continued)
SWITCHINGON
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Time Rise Time
VDD=5V ID=5A
=4.7 VGS=10V
R
G
10 60
(see test circuit, figure 3)
Q
Q
Q
Total Gate Charge
g
Gat e-Sou r ce Cha rge
gs
Gate-Drain Charge
gd
VDD=24V ID=10A VGS=10V 22
7 7
SWITCHINGOFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
r(Voff)
t
t
Of f - voltag e Rise Time Fall Time
f
Cross-over Time
c
VDD=24V ID=10A
=4.7 VGS=10V
R
G
(see test circuit, figure 5)
8 15 25
SOURCE DRAIN DIODE
Symbol Parameter Test Condition s Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
() Pulsed: Pulse duration =300 µs, duty cycle1.5 % () Pulse widthlimited by safe operating area
Source-drain Curre nt
()
Source-drain Curre nt (pulsed)
() Fo rward On Vo lt age ISD=4A VGS=0 1.5 V
Reverse Rec overy
rr
Time Reverse Rec overy
rr
= 10 A di/dt = 100 A/µs
I
SD
=24V Tj=150oC
V
DD
(see test circuit, figure 5)
40
0.06 Charge Reverse Rec overy
3.0
Current
15 90
30 nC
15 25 40
4
16
ns ns
nC nC
ns ns ns
A A
ns
µC
A
Safe Operating Area ThermalImpedance
3/8
Page 4
STN4NE03
OutputCharacteristics
Transconductance
TransferCharacteristics
StaticDrain-sourceOn Resistance
GateCharge vs Gate-sourceVoltage
4/8
CapacitanceVariations
Page 5
STN4NE03
Normalized GateThresholdVoltagevs Temperature
Source-drainDiode Forward Characteristics
Normalized On Resistancevs Temperature
5/8
Page 6
STN4NE03
Fig. 1: UnclampedInductiveLoad Test Circuit
Fig. 3: Switching Times Test CircuitsFor
ResistiveLoad
Fig. 2: UnclampedInductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode RecoveryTimes
6/8
Page 7
SOT-223 MECHANICAL DATA
STN4NE03
DIM.
mm mils
MIN. TYP. MAX. MIN. TYP. MAX.
a 2.27 2.3 2.33 89.4 90.6 91.7
b 4.57 4.6 4.63 179.9 181.1 182.3
c 0.2 0.4 0.6 7.9 15.7 23.6 d 0.63 0.65 0.67 24.8 25.6 26.4
e1 1.5 1.6 1.7 59.1 63 66.9
e4 0.32 12.6
f 2.9 3 3.1 114.2 118.1 122.1
g 0.67 0.7 0.73 26.4 27.6 28.7
l1 6.7 7 7.3 263.8 275.6 287.4
l2 3.5 3.5 3.7 137.8 137.8 145.7
L 6.3 6.5 6.7 248 255.9 263.8
L
l2
e1
a
b
d
c
e4
f
C
l1
B
C
E
g
P008B
7/8
Page 8
STN4NE03
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