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STN4920
Dual N Channel Enhancement Mode MOSFET
7.2A
DESCRIPTION
STN4920 is the Dual N-Channel logic enhancement mode power field effect
transistors which are produced using high cell density DMOS trench technology. It is
suitable for the power management applications in the portable or battery powered
system.
PIN CONFIGURATION
SOP-8
PART MARKING
SOP-8
FEATURE
z 30V/7.2A, R
z 30V/6.0A, R
z Super high density cell design for
extremely low R
z Exceptional on-resistance and maximum
DC current capability
z SOP-8 package design
= 28mΩ@VGS = 10V
DS(ON)
= 36mΩ@VGS = 4.5V
DS(ON)
DS(ON)
ORDERING INFORMATION
Part Number Package Part Marking
STN4920S8RG SOP-8 STN4920
STN4920S8TG SOP-8 STN4920
※ Process Code : A ~ Z ; a ~ z
※ STN4920S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free
※ STN4920S8TG S8 : SOP-8 ; T : Tube ; G : Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4920 2007. V1
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STN4920
Dual N Channel Enhancement Mode MOSFET
7.2A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter Symbol
Drain-Source Voltage V
Gate-Source Voltage V
A=25℃
Continuous Drain Current
(TJ=150℃)
Pulsed Drain Current IDM 20 A
Continuous Source Current
(Diode Conduction)
Power Dissipation
Operation Junction Temperature TJ -55/150
Storgae Temperature Range T
Thermal Resistance-Junction to Ambient
T
T
=70℃
A
T
A=25℃
T
=70℃
A
30 V
DSS
GSS
I
D
1.7 A
I
S
P
D
-55/150
STG
R
θ
JA
Typical Unit
±
20
7.2
6.0
2.8
1.8
65
W
℃
℃
℃
V
A
/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4920 2007. V1
Page 3
STN4920
Dual N Channel Enhancement Mode MOSFET
7.2A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter Symbol
Condition Min Typ Max Unit
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage V
Gate Leakage Current I
Zero Gate Voltage Drain
Current
On-State Drain Current I
Drain-source On-Resistance R
Forward Tran Conductance
V
(BR)DSS
GS(th)
GSS
I
DSS
TJ=55
D(on)
DS(on)
g
fs
Diode Forward Voltage VSD I
VGS=0V,ID=250uA 30
V
VDS=VGS,ID=250 uA 1.0 3.0 V
=0V,VGS=±20V
V
DS
VDS=30V,VGS=0V 1
℃
VDS=30V,VGS=0V 5
≥
V
5V,V
DS
=
V
10V, ID=7.2A
GS
=4
.5V, ID=6.0A
V
GS
=15.0V,ID=6.2A 13 S
V
DS
=2.3A,VGS=0V 0.8 1.2 V
S
=4.5V
GS
20
0.022
0.030
±
100
0.028
0.036
nA
uA
A
Ω
Dynamic
Total Gate Charge Qg 30
=15V,VGS=10V
V
Gate-Source Charge Qgs 7.5
Gate-Drain Charge Qgd
Input Capacitance
Output Capacitance
Reverse TransferCapacitance
Ciss 450
Coss 240
Crss
DS
=7.2A
I
D
VDS=15.0V,VGS=0V
f=1MHz
3.5
38
nC
pF
Turn-On Time
Turn-Off Time
t
d(on)
tr
t
d(off)
tf
V
=15V,RL=15Ω
DD
I
=1A,V
D
R
GEN
=6Ω
G
=10V
12 20
10 20
60 90
15 30
nS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4920 2007. V1
Page 4
STN4920
Dual N Channel Enhancement Mode MOSFET
7.2A
TYPICAL CHARACTERICTICS (25
℃
Unless Note)
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4920 2007. V1
Page 5
STN4920
Dual N Channel Enhancement Mode MOSFET
7.2A
TYPICAL CHARACTERICTICS (25℃ Unless Note)
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4920 2007. V1
Page 6
STN4920
Dual N Channel Enhancement Mode MOSFET
7.2A
TYPICAL CHARACTERICTICS (25
℃
Unless Note)
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4920 2007. V1
Page 7
STN4920
Dual N Channel Enhancement Mode MOSFET
7.2A
SOP-8 PACKAGE OUTLINE
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4920 2007. V1
Page 8
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