Datasheet STN4426 Datasheet (Stanson)

STN44

STN44 2

2

2 6

6

N Channel Enhancement Mode MOSFET

8.0 A

DESCRIPTION

FEATURE

2 0V/ 8.0 A, R

DS(ON)

= 28 m Ω (Typ.)

@V GS = 4.5 V

2 0V/ 7.0 A, R

DS(ON)

= 36 m Ω

@V GS = 2.5 V

2 0V/ 3.0 A, R

DS(ON)

= 42 m Ω

@V GS = 1.8 V

Super high density cell design for

extremely low R

DS(ON)

Exceptional on-resistance and maximum DC current capability SOP-8 package design

STN44 2 6 S Y A

DESCRIPTION

STN44 2 6 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching.

CONFIGURATION

PIN CONFIGURATION

CONFIGURATION

SOP-8

�

PART

PART MARKING SOP-8

SOP-8

S: Subcontractor Y: Year Code A: Process Code

STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com

MARKING

STN44 2 6 200 9 . V1

STN44

STN44 2

2

2 6

6

N Channel Enhancement Mode MOSFET

8.0 A

ABSOULTE

Parameter

Symbol

Typical

Unit

Drain-Source Voltage

VDSS20V

Gate-Source Voltage

VGSS

± 12

V

Continuous Drain Current (TJ=150

℃

)

TA=25 ℃ TA=70

℃

ID

7.4

6.0

A

Pulsed Drain Current

IDM

3 5

A

Continuous Source Current (Diode Conduction)

IS

2.3

A

Power Dissipation

TA=25 ℃ TA=70

℃

PD

2. 5

1.6

W

Operation Junction Temperature

TJ

-55/ 150

℃

Storgae Temperature Range

TSTG

-55/150

℃

Thermal Resistance-Junction to Ambient

R θ JA

8 0

℃

/W

ABSOULTE

ABSOULTE MAXIMUM

MAXIMUM

MAXIMUM RATINGS

RATINGS

RATINGS (Ta = 25

℃

Unless otherwise noted )

STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com

STN44 2 6 200 9 . V1

STN44

STN44 2

2

2 6

6

N Channel Enhancement Mode MOSFET

8.0 A

ELECTRICAL

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

V

(BR)DSSVGS

=0V,ID=250uA

2 0

V

Gate Threshold Voltage

V

GS(th)

V

DS

=V

GS

,ID= 2 50uA

0 . 4

1. 0

V

Gate Leakage Current

I

GSSVDS

=0V,V

GS

= ± 12 V

± 100

nA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= 20 V,V

GS

=0V

1

uA

V

DS

= 20 V,V

GS

=0V

TJ=85 ℃

10

On-State Drain Current

I

D(on)

V

DS

≧ 5V,V

GS

= 10V

6

A

Drain-source OnResistance

R

DS(on)

V

GS

= 4.5 V,ID= 8.0 A

V

GS

= 2.5 V,ID= 7.0 A

V

GS

= 1.8 V,ID= 3.0 A

22 26 32

28

3842m Ω

Forward Transconductance

gfs

V

DS

=15V,ID= 5.0 A V

30

S

Diode Forward Voltage

VSDIS= 1.0 A,V

GS

=0V

0.8

1.2

V

Dynamic

Total Gate Charge

Q

g

V

DS

=1 0 V,V

GS

= 4.5 V

I

D

≡

5.0 A

10

13

nC

Gate-Source Charge

Qgs1.4

Gate-Drain Charge

Q

gd

2.1

Input Capacitance

C

iss

V DS == 10 V,VGS=0V

f=1MHz

600

pF

Output Capacitance

C

oss

120

Reverse Transfer C apacitance

C

rss

1 00

Turn-On Time

t

d(on)

tr

V

DD

= 10 V,RL=1 0 Ω

ID=1A,V

GEN

= 4.5 V

RG=6 Ω

15

25

nS

40

60

Turn-Off Time

t

d(off)

tf

45

65

30

40

ELECTRICAL

ELECTRICAL CHARACTERISTICS

CHARACTERISTICS

CHARACTERISTICS ( Ta = 25

℃

Unless otherwise noted )

STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com

STN44 2 6 200 9 . V1

STN44

STN44 2

2

2 6

6

N Channel Enhancement Mode MOSFET

8.0 A

TYPICAL

TYPICAL CHARACTERICTICS

CHARACTERICTICS

STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com

STN44 2 6 200 9 . V1

STN44

STN44 2

2

2 6

6

N Channel Enhancement Mode MOSFET

8.0 A

TYPICAL

TYPICAL CHARACTERICTICS

CHARACTERICTICS

STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com

STN44 2 6 200 9 . V1

STN44

STN44 2

2

2 6

6

N Channel Enhancement Mode MOSFET

8.0 A

PACKAGE

PACKAGE OUTLINE

OUTLINE

OUTLINE SOP-8P

SOP-8P

STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com

STN44 2 6 200 9 . V1

Datasheet STN4426 Datasheet (Stanson) [ru]

Condition

Static

Dynamic

TYPICAL CHARACTERICTICS