Datasheet STGB7NB60HDT4 Datasheet (SGS Thomson Microelectronics)

STGB7NB60HD

N-CHANNEL 7A - 600V DPAK

PowerMESH IGBT

■

HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)

■

LOW ON-VOLTAGE DROP (V

cesat

)

■

LOW GATE CHARGE

■

HIGH CURRENT CAPABILITY

■

VERY HIGH FREQUENCY OPERATION

■

OFF LOSSES INCLUDE TAIL CURRENT

■

CO-PACKAGED WITH TURBOSWITCH



ANTIPARALLEL DIODE

■

SURFACE-MOU NTING D2PAK (TO-263)
POWER PACKAGE IN TA PE & REEL
(SUFFIX "T4")

DESCRIPTION

Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH IGBTs, with outstanding
perfomances. The suffix "H" identifies a family
optimized to achieve very low switching times for
high frequency applications (<120kHz).

APPLICATIONS

■

HIGH FREQUENCY MOTOR CONTROLS

■

SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES

®

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

CES

Collector-Emitter Voltage (VGS = 0) 600 V

V

GE

Gate-Emitter Voltage ± 20 V

I

C

Collector Current (continuous) at Tc = 25 oC14A

I

C

Collector Current (continuous) at Tc = 100 oC7A

I

CM

(•) Collector Current (pulsed) 56 A

P

tot

Total Dissipation at Tc = 25 oC80W
Derating Factor 0.64 W/

o

C

T

stg

Storage Temperature -65 to 150

o

C

T

j

Max. Operating Junction Temperature 150

o

C

(•) Pulse width limited by safe operating area

TYPE V

CES

V

CE(sat)

I

C

STGB7NB60HD 600 V < 2.8 V 7 A

June 1999

1

3

D2PAK

TO-263

(Suffix "T 4")

1/8

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-sink

Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ

1.56

62.5

0.5

o

C/W

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS

(T

j

= 25 oC unless otherwise specified)

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

BR(CES)

Collector-Emitter
Breakdown Voltage

IC = 250 µA V

GE

= 0 600 V

I

CES

Collector cut-off
(V

GE

= 0)

V

CE

= Max Rating Tj = 25 oC

V

CE

= Max Rating Tj = 125 oC

250

2000

µA
µA

I

GES

Gate-Emitter Leakage
Current (V

CE

= 0)

V

GE

= ± 20 V VCE = 0 ± 100 nA

ON (∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GE(th)

Gate Threshold
Voltage

V

CE

= VGE IC = 250 µA35V

V

CE(SAT)

Collector-Emitter
Saturation Voltage

VGE = 15 V IC = 7 A
V

GE

= 15 V IC = 7 A Tj = 125 oC

2.3

1.9

2.8 V
V

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

fs

Forward
Transconductance

VCE =25 V IC = 7 A 3.5 5 S

C

ies

C

oes

C

res

Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance

V

CE

= 25 V f = 1 MHz V

GE

= 0 390

45
10

560

68
15

730

90
20

pF
pF
pF

Q

G

Q

GE

Q

GC

Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge

VCE = 480 V IC = 7 A VGE = 15 V 42

7.9

17.6

55 nC

nC
nC

I

CL

Latching Current V

clamp

= 480 V RG=10Ω

T

j

= 150 oC

28 A

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

t

d(on)

t

r

Delay Time
Rise Time

VCC = 480 V IC = 7 A
V

GE

= 15 V RG = 10Ω

15
48

ns
ns

(di/dt)

on

Eon(❍)

Turn-on Current Slope
Turn-on Switching

Losses

V

CC

= 480 V IC = 7 A

R

G

= 10 Ω VGE = 15 V

T

j

= 125 oC

160
185

A/µs

µJ

STGB7NB60HD

2/8

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

c

tr(v

off

)

t

d

(off)

t

f

E

off

(**)

E

ts

(❍)

Cross-Over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
Total Switching Loss

VCC = 480 V I

C

= 7 A

R

GE

= 10 Ω VGE = 15 V

85
20
75
70
85

235

ns
ns
ns
ns

µ

J

µ

J

t

c

tr(v

off

)

t

d

(off)

t

f

E

off

(**)

E

ts

(❍)

Cross-Over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
Total Switching Loss

VCC = 480 V I

C

= 7 A

R

GE

= 10 Ω VGE = 15 V

T

j

= 125 oC

150

50
110
110
220
405

ns
ns
ns
ns

µ

J

µ

J

COLLECTOR-EMITTER DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

f

I

fm

Forward Current
Forward Current pulsed

7

56

A
A

V

f

Forward On-Voltage If = 7 A

I

f

= 7 A Tj = 125 oC

1.6

1.4

2.0 V
V

t

rr

Q

rr

I

rrm

Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current

If = 7 A VR=200 V
dI/dt = 100 A/µS T

j

= 125 oC

100
180

3.6

ns

nC

A

(•) Pulse width limited by max. junction temperature
(

❍

) Include recovery losses on the STTA506 freewheeling diode
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(**)Losses Include Also The Tail (Jedec Standardi zat io n)

Thermal Impedance

STGB7NB60HD

3/8

Output Characteristics

Transconductance

Collector-Emitter On Voltage vs Collector Current

Transfer Characteristics

Collector-Emitter On Voltage vs Temperature

Gate Threshold vs Temperature

STGB7NB60HD

4/8

Normalized Breakdown Voltage vs Temperature

Gate Charge vs Gate-Emitter Voltage

Total Switching Losses vs Temperature

Capacitance Variations

Total Switching Losses vs Gate Resistance

Total Switching Losses vs Collector Current

STGB7NB60HD

5/8

Switching Off Safe Operating Area Diode Forward Voltage

Fig. 1: Gate Charge test Circuit

Fig. 3: Switching Waveforms

Fig. 2: Test Circuit For Inductive Load Switching

STGB7NB60HD

6/8

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036

B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.21 1.36 0.047 0.053

D 8.95 9.35 0.352 0.368
E 10 10.4 0.393 0.409
G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.624
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068

L2

L3

L

B2

B

G

E

A

C2

D

C

A1

DETAIL "A"

DETAIL "A"

A2

P011P6/E

TO-263 (D2PAK) MECHANICAL DATA

STGB7NB60HD

7/8

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granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to chan ge w ithout notice. This publicatio n su persedes a nd r eplaces al l inf ormati on previ ously suppl ied. STMicroelect ron ics produ cts
are not auth ori zed f or use as critical component s in life support devices or systems without exp r ess writt e n ap proval o f STM i cr oel ectronics.

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STGB7NB60HD

8/8