Datasheet STGP7NB60FD, STGB7NB60FD Datasheet (ST)

查询STGB7NB60FD供应商

STGP7NB60FD - STGB7NB60FD

N-CHANNEL 7A - 600V TO-220 / D2PAK

PowerMESH™ IGBT

TYPE V

CES

V

CE(sat) (Max)

@25°C

STGP7NB60FD
STGB7NB60FD

■ HIGH INPUT IMPEDANCE

■ LOW ON-VOLTAGE DROP (V

■ OFF LOSSES INCLUDE TAIL CURRENT

■ LOW GATE CHARGE

■ HIGH CURRENT CAPABILITY

■ HIGH FREQUENCY OPERATION

■ CO-PACK AGED WITH TURBOSWITCH™

600 V
600 V

<2.4 V
<2.4 V

cesat

)

I

C

@100°C

7A
7A

ANTIPARALLEL DIODE

DESCRIPTION

Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has de­signed an advanced family of IGBTs, the Power­MESH™ IGBTs, wit h outstanding perfomances .
The suffix " F" identifies a family optimized to
achieve very low switching switching times for high
frequency applications (<40KHZ)

3

1

TO-220

3

2

1

D2PAK

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■ MOTOR CONTROLS

■ SMPS AND PFC AND BOTH HARD SWITCH

AND RESONANT TOPOLOGIES

ORDERING INFORMATION

SALES TYPE MARKING PACKAGE PACKAGING

STGP7NB60FD GP7NB60FD TO-220 TUBE

STGB7NB60FDT4 GB7NB60FD

2

PAK

D

TAPE & REEL

1/11June 2003

STGP7NB60FD - ST GB 7N B6 0FD

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

CES

V

GE

I
I

I

CM

P

TOT

T

stg

T

() Pulse width limited by safe operating area

THERMAL DATA

Rthj-case Thermal Resistance Junction-case Max 1.56 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

Collector-Emitter Voltage (VGS=0)

600 V
Gate-Emitter Voltage ±20 V
Collector Current (continuous) at TC= 25°C

C

Collector Current (continuous) at TC= 100°C

C

()

Collector Current (pulsed) 56 A
Total Dissipation at TC= 25°C

14 A

7A

80 W
Derating Factor 0.64 W/°C
Storage Temperature – 55 to 150 °C
Max. Operating Junction Temperature 150 °C

j

ELECTRICAL CHARACTERISTICS (T

= 25 °C UNLESS O THERWISE SPECIFIED)

CASE

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

BR(CES)

Collector-Emitter Breakdown

IC= 250 µA, VGE=0 600 V

Voltage

I

CES

I

GES

Collector cut-off

=0)

(V

GE

Gate-Emitter Leakage
Current (V

CE

=0)

V

= Max Rating, TC=25°C

CE

= Max Rating, TC= 125 °C

V

CE

V

=±20V,VCE= 0 ±100 nA

GE

50 µA

100 µA

ON (1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GE(th)

V

CE(sat)

Gate Threshold Voltage
Collector-Emitter Saturation

Voltage

V

CE=VGE,IC

VGE=15V,IC=7A
VGE=15V,IC=7A,Tj=125°C

= 250 µA

35V

2.0 2.4 V

1.6 V

2/11

STGP7NB60FD - ST GB 7N B60FD

ELECTRICAL CHARACTERISTICS (CONTINUED)

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1)

g

fs

C

C

oes

C

res

Forward Transconductance
Input Capacitance

ies

Output Capacitance 80 pF
Reverse Transfer

Capacitance

Q
Q
Q

I

CL

Total Gate Charge

g

Gate-Emitter Charge

ge

Gate-Collector Charge

gc

Latching Current V

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

(di/dt)

Eon

Turn-on Delay Time
Rise Time

r

Turn-on Current Slope

on

Turn-on Switching Losses

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff

t

d(off

E

tr(V

td(

E

t

t

off

E

t

t

off

E

Cross-over Time

c

)

Off Voltage Rise Time 45 ns

)

Delay Time 107 ns
Fall Time 140 ns

f

(**)

Turn-off Switching Loss 240
Total Switching Loss 300

ts

Cross-over Time

c

)

Off Voltage Rise Time 195 ns

off

)

Delay Time 204 ns

off

Fall Time 650 ns

f

(**)

Turn-off Switching Loss 565
Total Switching Loss 625

ts

VCE=25V,Ic=7A
V

=25V,f=1MHz,VGE=0

CE

=480V,IC=7A,

V

CE

VGE= 15V

= 480 V

clamp

Tj = 125°C , R

= 480 V, IC=7ARG=10Ω,

V

CC

=10Ω

G

VGE=15V

= 480 V, IC=7ARG=10Ω

V

CC

V

= 15 V,Tj =125°C

GE

V

= 480 V, IC=7A,

cc

R

=10Ω,VGE=15V

G

V

= 480 V, IC=7A,

cc

R

=10Ω,VGE=15V

G

Tj = 125 °C

6S

540 pF

13 pF

37

50

4

18
28 A

17

6

890

59

190 ns

410 ns

nC
nC
nC

ns
ns

A/µs

µJ

µJ
µJ

µJ
µJ

COLLECTOR-EMITTER DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

f

I

fm

V

t

rr

Q
I

rrm

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by max. junction t emperature.

(**)Losses include Also the Tail (Jedec Standardization)

Forward Current
Forward Current pulsed

Forward On-Voltage If= 3.5 A

f

Reverse Recovery Time
Reverse Recovery Charge

rr

Reverse Recovery Current

= 3.5 A, Tj = 125 °C

I

f

=7A,VR=40V,

I

f

Tj =125°C, di/dt = 100 A/µs

1.4

1.1
50

70

2.7

7

56

1.9

A
A

V
V

ns

nC

A

3/11

STGP7NB60FD - ST GB 7N B6 0FD

Output Characteristics

Transfer Characteri stics

Normalized Collector-Emitter On Voltage vs Temp.Transconductance

Collector-Emitter On V oltage vs Collector Current

4/11

Gate Thresho ld vs Temperature

STGP7NB60FD - ST GB 7N B60FD

Normalized Breakdown Voltage vs Temperature

Gate Charge vs G ate-Emitter Voltage

Capacitance Variations

Total Switching Losses vs Gate Resistance

Total Switching Lo sses vs Tem perature

Total Switching L osses vs Collector Cu rrent

5/11

STGP7NB60FD - ST GB 7N B6 0FD

Thermal Impedance for TO-220/D²PAK

Emitter-Collector Diode Characteristics

Turn-Off SOA

6/11

STGP7NB60FD - ST GB 7N B60FD

Fig. 2: Test Circuit For Induct ive Load SwitchingFig. 1: Gate Charge test Circuit

7/11

STGP7NB60FD - ST GB 7N B6 0FD

TO-220 MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181

b 0.61 0.88 0.024 0.034

b1 1.15 1.70 0.045 0.066

c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409

e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.194 0.202

F 1.23 1.32 0.048 0.052

H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107

L 13 14 0.511 0.551

L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137

øP 3.75 3.85 0.147 0.151

Q 2.65 2.95 0.104 0.116

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

8/11

STGP7NB60FD - ST GB 7N B60FD

D2PAK MECHANICAL DATA

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009

B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368

D1 8 0.315

E 10 10.4 0.393

E1 8.5 0.334

G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.625

L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068

mm. inch

M 2.4 3.2 0.094 0.126

R 0.4 0.015

V2 0º 4º

3

9/11

1

STGP7NB60FD - ST GB 7N B6 0FD

D2PAK FOOTPRINT

TAPE AND REEL SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

REEL MECHANICAL DATA

DIM.

A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197

mm inch

MIN. MAX. MIN. MAX.

TAPE MECHANICAL DATA

DIM.

A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626

D 1.5 1.6 0.059 0.063

D1 1.59 1.61 0.062 0.063

E 1.65 1.85 0.065 0.073

F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4. 1 0. 153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2. 1 0. 075 0.082

R 50 1.574

T 0.25 0.35 0.0098 0.0137

W 23.7 24.3 0.933 0.956

* on sales ty pe

10/11

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

1000 1000

STGP7NB60FD - ST GB 7N B60FD

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of u se of such inf ormat ion nor for any in fring ement of p aten ts or othe r ri ghts of th ird p arties whic h may resul t f rom
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.

Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco

© The ST logo is a registered trademark of STMicroelectronics

© 2003 STMicroelectronics - Printed in Italy - All Rights Reserved

Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.

STMicroelectronics GROUP OF COMPANIES

© http://www.st.com

11/11