Datasheet STGB3NB60HD Datasheet (SGS Thomson Microelectronics)



STGB3NB60HD

N-CHANNEL 3A - 600V TO-263

PowerMESH IGBT

TYPE V

CES

V

CE(sat)

I

C

ST G B3NB60HD 600 V < 2. 8 V 3 A

■ HIGHINPUT IMPEDANCE

(VOLTAGEDRIVEN)

■ LOW ON-VOLTAGEDROP (V

■ LOW GATECHARGE

■ HIGHCURRENTCAPABILITY

■ VERYHIGH FREQUENCYOPERATION

■ OFFLOSSES INCLUDETAIL CURRENT

■ CO-PACKAGEDWITH TURBOSWITCH

ANTIPARALLELDIODE

■ SURFACE-MOUNTINGD

2

PAK(TO-263)

cesat

)

POWERPACKAGE IN TAPE & REEL
(SUFFIX”T4”)

DESCRIPTION

Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH IGBTs, with outstanding
perfomances. The suffix ”H” identifies a family
optimized to achieve very low switching times for
high frequencyapplications(<120kHz).

3

1

D2PAK

TO-263

(Suffix”T4”)

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■ HIGHFREQUENCY MOTOR CONTROLS

■ SMPSAND PFC IN BOTH HARDSWITCH

AND RESONANTTOPOLOGIES

ABSOLUTE MAXIMUM RATINGS

Symb o l Parameter Value Unit

V

V

I

CM

P

T

(•) Pulse width limited by max. junction temperature

June 1999

Collect o r -Em i t t er Volt age (VGS= 0) 600 V

CES

Gate-Emitter V oltage ± 20 V

GE

I

Collect o r Current (continuous ) at Tc=25oC6A

C

I

Collect o r Current (continuous ) at Tc= 100oC3A

C

(•) Collect or Current (pulsed) 24 A

Tot al Dissipation at Tc=25oC70W

tot

Derat ing Fact or 0.56 W/
Sto rage Temperature -65 to 150

stg

T

Max. Oper a t ing Junction Tem perature 150

j

o

C

o

C

o

C

1/8

STGB3NB60HD

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-sink

Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p

1.78

62.5

0.5

o

C/W

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS

=25oC unless otherwise specified)

(T

j

OFF

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

V

BR(CES)

Collector-Emitter

IC=250µAVGE= 0 600 V

Break dow n Voltage

I

I

CES

GES

Collect o r cut-of f

=0)

(V

GE

Gat e- Em i t t er Leakage
Current (V

CE

=0)

V

=MaxRating Tj=25oC

CE

=MaxRating Tj=125oC

V

CE

V

= ± 20 V VCE=0 ±100 nA

GE

100

1000

ON(∗)

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

V

GE(th)

Gate Th reshold

VCE=VGEIC= 250 µ A35V

Voltage

V

CE(SAT)

Collector-Emitter
Sat urat ion V olt age

VGE=15V IC=3A
V

=15V IC=3A Tj=125oC

GE

2.4

1.9

2.8 V

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

C

C

C

Q
Q

g

Q

I

CL

Forward

fs

Tr ansc on duc tance
Input Capaci t ance

ies

Out put Capac it ance

oes

Reverse Transfer

res

Capacit a nc e
Tot al Gate Charge

G

Gate-Emitt er C harge

GE

Gat e- Col lect or C har ge

GC

Latc hing C urrent V

VCE=25 V IC=3A 1.3 2.4 S

VCE=25V f=1MHz VGE= 0 160

23

4.5

VCE= 480 V IC=3A VGE=15V 21

235

33

6.6

300

43

8.6

27 nC

6

7.6

=480V RG=10Ω

clamp

T

= 150oC

j

12 A

µA
µ

V

pF
pF
pF

nC
nC

A

SWITCHINGON

Symbol Param et er Test Co n d i t ions Min. Typ. Max. Uni t

(di/dt)

2/8

t

d(on)

t

r

Eon(❍)

Delay Time
Rise Tim e

Tur n-on Current Slope

on

Tur n-on Switc hing
Losses

VCC= 480 V IC=3A

=15V RG=10Ω

V

GE

V

= 480 V IC=3A

CC

=10Ω VGE=15V

R

G

T

= 125oC

j

16
30

400

77

ns
ns

A/µs

J

µ

STGB3NB60HD

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHINGOFF

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

tr(v
t

E

E

tr(v
t

E

E

(off)

d

off

ts

(off)

d

off

ts

t

t

Cross-Over Tim e

c

Off Voltage Rise Time

)

off

Delay Time

t

Fall T ime

f

(**)

Turn-off Switching Loss

(❍)

Tot al Switching Lo ss
Cross-Over Tim e

c

Off Voltage Rise Time

)

off

Delay Time
Fall T ime

t

f

Turn-off Switching Loss

(**)
(❍)

Tot al Switching Lo ss

VCC = 480 V I
R

GE

=10

Ω

VGE=15V

VCC = 480 V I
R

GE

= 125oC

T

j

=10

Ω

VGE=15V

=3A

C

=3A

C

90
36
53
70
33

100
180

82
58

110

88

165

COLLECTOR-EMITTERDIODE

Symbol Param et er Test Co n d itions M i n . Typ. Max. Unit

I

For ward Curre nt

f

I

V

t

Q

I

rrm

(•) Pulse width limited by max. junction temperature
(

❍) Include recovery losses on the STTA306 freewheeling diode

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
(**)Losses Include Also The Tail (Jedec Standardization)

For ward Curre nt puls e d

fm

For ward On-Voltage If=3A

f

Reverse Recovery Time

rr

Reverse Recovery Charge

rr

Reverse Recovery Current

=3A Tj= 125oC

I

f

If=3A VR=200 V
dI/dt = 100 A/µST

= 125oC

j

1.6

1.4
87

160

3.7

3

24

2.0 V

ns
ns
ns
ns

µJ
µ

ns
ns
ns
ns

µ
µ

J

J
J

A
A

V

ns

nC

A

ThermalImpedance

3/8

STGB3NB60HD

OutputCharacteristics

Transconductance

TransferCharacteristics

Collector-EmitterOn Voltagevs Temperature

Collector-EmitterOnVoltagevs Collector Current

4/8

Gate Thresholdvs Temperature

STGB3NB60HD

NormalizedBreakdown Voltage vs Temperature

Gate Chargevs Gate-EmitterVoltage

CapacitanceVariations

TotalSwitchingLossesvs Gate Resistance

TotalSwitchingLossesvs Temperature

TotalSwitchingLossesvs Collector Current

5/8

STGB3NB60HD

SwitchingOff SafeOperatingArea DiodeForwardVoltage

Fig. 1:

Fig. 3

Gate Charge test Circuit

SwitchingWaveforms

Fig. 2:

TestCircuitFor Inductive LoadSwitching

6/8

TO-263 (D2PAK) MECHANICAL DATA

STGB3NB60HD

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036

B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.21 1.36 0.047 0.053

D 8.95 9.35 0.352 0.368
E 10 10.4 0.393 0.409

G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.624
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068

mm inch

D

A

C2

DETAIL”A”

C

A2

DETAIL”A”

A1

B2

E

L2

L

L3

B

G

P011P6/E

7/8

STGB3NB60HD

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of use of such information nor for any infringement of patents or other rights of third parties which may resultfrom its use. No license is
granted by implication orotherwise under any patent or patentrights of STMicroelectronics. Specificationmentioned in this publicationare
subjecttochange without notice.Thispublicationsupersedes andreplacesall information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devicesor systems without expresswritten approval of STMicroelectronics.

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 1999STMicroelectronics – Printed in Italy – All Rights Reserved

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