5mW Visible Laser Diode
Description
The SLD1121VS is a red laser diode designed for bar code readers and measuring instruments. This
features a small package and lower power consumption.
Features
• Visible light (670nm typ.)
• Small package (φ5.6mm)
• Low operating current (Iop = 50mA typ.)
• Fundamental transverse mode
Applications
• Bar code readers
• Measuring instruments
Structure
• AlGaInP quantum well structure laser diode
• PIN photo diode for optical power output monitor
Recommended Optical Power Output
3mW
Absolute Maximum Ratings (Tc = 25°C)
• Optical power output PO 5mW
•Reverse voltage VR LD 2 V
PD 15 V
• Operating temperature Topr –10 to +50 °C
• Storage temperature Tstg –40 to +85 °C
Cinnection Diagram
– 1 –
E93821A81-PS
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
SLD1121VS
12
3
COMMON
LDPD
2
Bottom View
1
3
1. LD cathode
2. PD anode
3. COMMON
Pin Configuration
– 2 –
SLD1121VS
Electrical and Optical Characteristics (Tc = 25°C) Tc: Case temperature
Item Symbol Conditions Min. Typ. Max. Unit
Threshold current
Operating current
Operating voltage
Wavelength
Radiation
angle
Positional
accuracy
Differential efficiency
Astigmatism
Monitor current
Ith
Iop
Vop
λ
θ⊥
θ//
∆X, ∆Y, ∆Z
∆φ//
∆φ⊥
ηD
As
Imon
PO = 3mW
PO = 3mW
PO = 3mW
PO = 3mW
PO = 3mW
PO = 3mW
| Z// – Z⊥ |
PO = 3mW, VR = 5V
660
24
7
0.15
0.08
40
50
2.2
670
32
11
0.45
32
0.20
60
70
2.8
680
35
15
±80
±3
±3
0.7
0.60
mA
mA
V
nm
degree
degree
µm
degree
degree
mW/mA
µm
mA
Perpendicular
Parallel
Position
Angle
Marking
LOT No.
V
Product name
– 3 –
SLD1121VS
Example of Representative Characteristics
–40–60 –20 0 20 6040
Far field pattern (FFP)
Angle [degree]
Relative radiant intensity
θ//
θ⊥
PO = 3mW, TC = 25°C
0
0
3
6
2
5
1
4
4020 60 80
Optical power output vs. Forward current characteristics
Optical power output vs. Monitor current characteristics
IF – Forward current [mA]
0 0.50.25
Imon – Monitor current [mA]
PO – Optical power output [mW]
TC = 0°C
TC = 0°C
IFImon
25°C
25°C
50°C
50°C
–20
0
0.1
0.2
0.4
0.3
20 600 40
Monitor current vs. Temperature characteristics
TC – Case temperature [°C]
Imon – Monitor current [mA]
PO = 3mW
–20
10
200
100
10–10 30 50200 40 60
Threshold current vs. Temperature characteristics
TC – Case temperature [°C]
Ith – Threshold current [mA]
– 4 –
SLD1121VS
660 665 670 675 680 685
Temperature dependence of spectrum
λ – Wavelength [nm]
Relative radiant intensity
PO = 3mW
T
C = 50°C
TC = 25°C
TC = 0°C
– 5 –
SLD1121VS
665 670 675 680
Power dependence of spectrum
λ – Wavelength [nm]
Relative radiant intensity
PO = 5mW
PO = 3mW
PO = 1mW
T
C = 25°C
– 6 –
SLD1121VS
Package Outline Unit: mm
SONY CODE
EIAJ CODE
JEDEC CODE
Reference
Slot
1.0
0.5
90°
0.4
φ5.6 – 0.025
0
φ4.4 MAX
φ3.7 MAX
φ1.0 MIN
0.5 MIN
Window Glass
Reference
Plane
LD Chip
& Photo
Diode
0.25
2.6 MAX
∗1.26
1.2 ± 0.1
6.5
2 3 1
3 – φ0.45
PCD φ2.0
∗Optical
Distance = 1.35 ± 0.08
1
2
3
M-274
PACKAGE WEIGHT
0.3g
M-274
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