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查询SLD1131VS供应商
Index-Guided Red Laser Diode
Description
The SLD1131VS is an index-guided red laser
diode. It features small astigmatism and high-speed
pulse response.
Features
• Red visible light (670nm typ.)
• Small astigmatism (7µm typ.)
• High-speed pulse response (Rise time = 5ns typ.)
• Low operating current (40mA typ.)
• Small package (φ5.6mm)
• Longitudinal single mode
SLD1131VS
M-294
Applications
• Bar code readers
• Measuring instruments
Structure
• AlGaInP quantum well-structured laser diode
• PIN photo diode for optical power output monitor
Recommend Optical Power Output 4 mW
Absolute Maximum Ratings (Tc = 25°C)
• Optical power output PO 6mW
•Reverse voltage VR LD 2 V
PD 15 V
• Operating temperature Topr –10 to +50 °C
• Storage temperature Tstg –40 to +85 °C
Connection Diagram Pin Configuration
COMMON
3
PD
2
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
LD
1
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21
3
1. LD cathode
2. PD anode
3. COMMON
Bottom View
E94306B73-PS
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SLD1131VS
Optical and Electrical Characteristics (Tc = 25°C) Tc : Case temperature
Item
Threshold current
Operating current
Operating voltage
Wavelength
Radiation
angle
Positional
accuracy
Differential efficiency
Astigmatism
Monitor current
Marking
Perpendicurar
Parallel
Position
Angle
Symbol Conditions Min. Typ. Max. Unit
Ith
Iop
Vop
λ
θ⊥
θ//
∆X, ∆Y, ∆Z
∆φ//
∆φ⊥
ηD
As
Im
Po = 4mW
Po = 4mW
Po = 4mW
Po = 4mW
Po = 4mW
Po = 4mW
Po = 4mW
Po = 4mW, Vr = 5V
660
24
7
0.15
0.08
30
40
2.3
670
30
8.5
0.3
7
0.20
50
60
2.8
680
35
12
±80
±3
±3
0.7
15
0.60
mA
mA
V
nm
degree
degree
µm
degree
degree
mW/mA
µm
mA
Product name
H
LOT No.
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Example of Representative Characteristics
Optical power output vs. Forward current characteristics
Optical power output vs. Monitor current characteristics
50°C25°CTC = 0°C0°C25°CTC = 50°C
6
5
4
3
2
Po – Optical power output [mW]
1
00
I
F – Forward current [mA]
SLD1131VS
Far field pattern (FFP)
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
Relative radiant intensity
0.2
0.1
6050400102030
Angle [degree]
Po = 4mW, Tc = 25°C
θ⊥
θ//
20100–40 –30 –20 –10 30 40
0 0.25 0.5
Imon – Monitor current [mA]
Threshold current vs. Temperature characteristics
200
100
Ith – Threshold current [mA]
10
403020–20 –10 0 10 50 60
Tc – Case temperature [°C]
Monitor current vs. Temperature characteristics
0.4
PO = 4mW
0.3
0.2
Im – Monitor current [mA]
0.1
0
4020–20 0 60
Tc – Case temperature [°C]
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PO = 4mW
Temperature dependence of spectrum
T
C = 50°C
SLD1131VS
T
C = 25°C
Relative radiant intensity
T
C = 0°C
665 670 675 680 685 690
λ – Wavelength [nm]
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T
C = 25°C
Power output dependence of spectrum
P
O = 6mW
SLD1131VS
Relative radiant intensity
P
O = 4mW
PO = 1mW
670 675 680 685
λ – Wavelength [nm]
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Package Outline Unit: mm
Reference
Slot
Window Glass
Reference
Plane
90°
0.25
0.5
M-294
3
2
0
φ5.6 – 0.025
φ4.4 MAX
φ3.7 MAX
φ1.0 MIN
SLD1131VS
1.0
0.4
1
0.5 MIN
2.6 MAX
∗1.26
SONY CODE
EIAJ CODE
JEDEC CODE
LD Chip
& Photo
Diode
∗Optical
Distance = 1.35 ± 0.08
M-294
231
3 – φ0.45
PCD φ2.0
PACKAGE WEIGHT
1.2 ± 0.1
6.5
0.3g
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