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200mW High Power Laser Diode
Description
The SLD302V is a gain-guided, high-power laser diodes fabricated by MOCVD.
MOCVD: Metal Organic Chemical Vapor Deposition
Features
• High power
Recommended power output Po = 180mW
• Low operating current
Applications
• Solid state laser excitation
• Medical use
Structure
GaAlAs double-hetero-type laser diode
Absolute Maximum Ratings (Tc = 25°C)
• Optical power output Po 200 mW
• Reverse voltage VR LD 2 V
PD 15 V
• Operating temperature Topr –10 to +50 °C
• Storage temperature Tstg –40 to +85 °C
Pin Configuration
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E88060B81-PS
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
SLD302V
2
Bottom View
1. LD cathode
2. PD anode
3. COMMON
1
3
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SLD302V
Electrical and Optical Characteristics (Tc: Case temperature, Tc = 25°C)
Handling Precautions
Eye protection against laser beams
The optical output of laser diodes ranges from
several mW to 1W. However the optical power
density of the laser beam at the diode chip
reaches 1mW/cm2. Unlike gas lasers, since
laser diode beams are divergent, uncollimated
laser diode beams are fairly safe at a laser
diode. For observing laser beams, ALWAYS use
safety goggles that block infrared rays. Usage of
IR scopes, IR cameras and fluorescent plates is
also recommended for monitoring laser beams
safely.
∗1
Wavelength Selection Classification
Type
SLD302V-1
SLD302V-2
SLD302V-3
Wavelength (nm)
785 ± 15
810 ± 10
830 ± 10
Type
SLD302V-21
SLD302V-24
SLD302V-25
Wavelength (nm)
798 ± 3
807 ± 3
810 ± 3
APC
ATC
Safety goggles for
protection from
laser beam
IR fluorescent plate
Optical
material
Optical power output control device
temperature control device
Lens
Laser diode
Optical boad
Item
Symbol
Conditions
Min.
Typ. Max. Unit
Ith
Iop
Vop
λp
Imon
θ⊥
θ//
∆X, ∆Y
∆φ⊥
ηD
Threshold current
Operating current
Operating voltage
Wavelength
∗
1
Monitor current
Radiation angle
(F. W. H. M.∗)
Positional accuracy
Differential efficiency
PO = 180mW
PO = 180mW
PO = 180mW
PO = 180mW
VR = 10V
PO = 180mW
PO = 180mW
PO = 180mW
770
0.65
150
350
1.9
0.3
28
12
0.9
200
500
3.0
840
40
17
±50
±3
mA
mA
V
nm
mA
degree
degree
µm
degree
mW/mA
Perpendicular
Parallel
Position
Angle
∗
F. W. H. M. : Full Width at Half Maximum
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SLD302V
Example of Representative Characteristics
Optical power output vs.
Forward current characteristics
IF – Forward current [mA]
Po – Optical power output [mW]
Optical power output vs. Monitor current characteristics
Imon – Monitor current [mA]
Po – Optical power output [mW]
Threshold current vs. Temperature characteristics
Tc – Case temperature [°C]
Ith – Threshold current [mA]
Power dependence of far field pattern
(parallel to junction)
Angle [degree]
Radiation intensity (optional scale)
Power depecdence of near field pattern
Radiation intensity (optional scale)
Oscillation wavelength vs. Temperature characteristics
Tc – Case temperature [°C]
λp – Oscillation wavelength [nm]
0 250 500
0
100
200
TC = 0°C
TC = 25°C
TC = 50°C
0 0.1 0.2
0
100
200
TC = –10°C
TC = 0°C
TC = 25°C
TC = 50°C
–10 0 10 20 30 40 50
100
500
1000
–30 –20 –10 0 10 20 30
TC = 25°C
PO = 180mW
PO = 90mW
PO = 30mW
50µm
TC = 25°C
PO = 180mW
P
O = 150mW
PO = 100mW
P
O = 75mW
PO = 50mW
PO = 25mW
–10 0 10 20 30 40 50
780
790
830
820
810
800
PO = 180mW
TC = –10°C
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SLD302V
Differential efficiency vs. Temperature characteristics
Tc – Case temperature [°C]
–10 0 5040302010
0
0.5
1.0
1.5
ηD – Differential efficiency [mW/mA]
Power dependence of polarization ratio
Po – Optical power output [mW]
0 50 100 150 200 250
0
20
60
40
80
Polarization ratio
Tc = 25°C
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SLD302V
Wavelength [nm]
800 810805
Relative radiant intensity
Tc = 25°C
Po = 40mW
Wavelength [nm]
800 810805
Relative radiant intensity
Tc = 25°C
Po = 120mW
Wavelength [nm]
800 810805
Relative radiant intensity
Tc = 25°C
Po = 200mW
Wavelength [nm]
800 810805
Relative radiant intensity
Tc = 25°C
Po = 80mW
Wavelength [nm]
800 810805
Relative radiant intensity
Tc = 25°C
Po = 160mW
Power dependence of wavelength
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SLD302V
Wavelength [nm]
805 825815
Relative radiant intensity
Tc = –6°C
Wavelength [nm]
805 825815
Relative radiant intensity
Tc = 12°C
Wavelength [nm]
805 825815
Relative radiant intensity
Tc = 23°C
Wavelength [nm]
805 825815
Relative radiant intensity
Tc = 35°C
Wavelength [nm]
805 825815
Relative radiant intensity
Tc = 45°C
Temperature dependence of wavelength (Po = 180mW)
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SLD302V
Package Outline Unit: mm
M-248 (LO-11)
Reference
Slot
1.0
0.4
Photo
Diode
2
3
1
Window
Glass
Reference
Plane
LD Chip
φ9.0 – 0.015
0
φ7.7 MAX
φ6.9 MAX
φ3.5
0.6 MAX
∗2.45
3.4 MAX1.5
7.0 MAX
3 – φ0.45
PCD φ2.54
∗Optical
Distance = 2.55 ± 0.05
SONY CODE
EIAJ CODE
JEDEC CODE
M-248
PACKAGE WEIGHT
1.2g
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