Page 1
Description
The SLD104AU is a AlGaAs laser diode developed for positive power supplies. In comparison with the
SLD104U, this device attains even lower power consumption levels.
Features
• Low power consumption
• Single power supply
• Low noise
• Microminiaturized package (φ5.6mm)
Structure
• AlGaAs double hetero-type laser diode
• PIN photo diode for laser optical power output monitor
Absolute Maximum Ratings (Tc = 25°C)
• Optical power output Po 5 mW
• Reverse voltage VR LD 2 V
PD 15 V
• Operating temperature Topr –10 to +60 °C
• Storage temperature Tstg –40 to +85 °C
Connection Diagram
AlGaAs Laser Diode
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E89418B81-PS
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
SLD104AU
Pin Configuration
12
3
COMMON
LDPD
2
Bottom View
1
3
1. LD anode
2. PD anode
3. COMMON
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SLD104AU
Electrical and Optical Characteristics (Tc = 25°C) Tc: Case temperature
UnitMax.Typ.
Min.
Condition
Symbol
Ith
Iop
Vop
λ
Im
θ⊥
θ//
∆SR
∗1
∆X, ∆Y, ∆Z
∆φ⊥
ηD
AS
S/N
ID
CT
Item
1.7
760
0.08
20
9
0.2
45
52
1.9
780
0.15
32
17
0.45
88
Perpendicular
Parallel
Asymmetry
Position
Angle
Threshold current
Operating current
Operating voltage
Wavelength
Monitor current
Radiation angle
(F. W. H. M.∗)
Differential efficiency
Astigmatism
Signal to noise ratio
Dark current of PD
Capacitance of PD
60
70
2.5
800
0.4
45
25
20
±150
±3
0.7
15
150
30
mA
mA
V
nm
mA
degree
degree
%
µm
degree
mW/mA
µm
dB
nA
pF
PO = 3mW
PO = 3mW
PO = 3mW
PO = 3mW,
VR = 5V
PO = 3mW
PO = 3mW
PO = 3mW
| Z// – Z⊥ |
fC = 7.5MHz
∆f = 30kHz
PO = 4mW
VR = 5V
VR = 5V, f = 1MHz
PO = 3mW
Positional
accuracy
Power
S
L SR
0
θ//
–7° 7°
∗1
∆SR =
| SL – SR |
SL + SR
∗
F. W. H. M. : Full Width at Half Maximum
Page 3
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SLD104AU
Example of Representative Characteristics
–1.0 1.0 [V]
0
0.25 [mA]
–0.25
PIN diode current-voltage characteristics
Tc = 25°C
P
O = 3mW
V
I
0 20 40 60 80 100
1
4
3
2
5
Optical power output vs. Forward current characteristics
IF – Forward current [mA]
PO – Optical power output [mW]
Tc = 25°C
Tc = 50°C
–40 –20 0 20 40
0
0.5
1.0
Far field pattern (FFP)
Angle [degree]
Radiant intensity (optional scale)
780 781 782 783 784
Relative light intensity vs. Wavelength characteristics
λ – Wavelength [nm]
Relative light intensity
PO = 5mW
778 779 780 781 782
Relative light intensity vs. Waveform characteristics
λ – Wavelength [nm]
Relative light intensity
PO = 3mW
θ//
θ⊥
PO = 3mW
–10 0 25 50 100
10
50
45
100
Temperature characteristic of threshold current
TC – Case temperature [°C]
Ith – Threshold current [mA]
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SLD104AU
Package Outline Unit: mm
SONY CODE
EIAJ CODE
JEDEC CODE
PACKAGE WEIGHT
M-259
1.0
0.4
0.5
90°
12
3
Reference Slot
φ5.6
0
– 0.05
φ4.4 MAX
φ3.8 MAX
0.6
0.25
0.5 MIN
∗1.26
3.1 MAX1.2 ± 0.16.5
132
3 – φ0.45
PCD φ2.0
LD Chip & Photo Diode
∗Optical
Distance = 1.35 ± 0.15
Reference Plane
Window Glass φ0.8
30°
M-259
0.3g
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