Page 1
GaAlAs Laser Diode
Description
The SLD104AV is a low noise GaAlAs laser diode
developed for CD.
Features
• High temperature operation
• Low noise
• Small package (φ 5.6 mm)
SLD104AV
M-260
Applications
• Pickup for CD players
Absolute Maximum Ratings (Ta=25 °C)
• Optical power output PO 5mV
•Reverse voltage VR LD 2 V
Structure
• GaAlAs double hetero structured laser diode
• Operating temperature
• Pin photodiode for optical power output monitor
• Storage temperature
Connection Diagram Pin Configuration
COMMON
3
PD 15 V
Topr –10 to +60 °C
Tstg –40 to +85 °C
PD
2
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
LD
1
—1—
21
3
1. LD anode
2. PD anode
3. COMMON
Bottom View
E96Y23-TE
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SLD104AV
Optical and Electrical Characteristics (TC=25 °C) TC : Case temperature
Item
Threshold current
Operating current
Operating voltage
Oscillation wavelength
Monitor current
Parallel radiation angle
Perpendicular
radiation angle
Parallel radiation
angle symmetry
Perpendicular radiation
angle accuracy
Positional accuracy
Differential efficiency
Astigmatism
S/N ratio
PD dark current
PD capacitance
between pins
Symbol
Ith
Iop
Vop
λ
Im
θ //
θ⊥
∗1
∆SR
∆ ⊥
∆X, ∆Y, ∆Z
ηD
As
S/N
ID
Cr
Conditions (Tc=25 °C)
PO=3 mW
PO=3 mW
PO=3 mW
PO=3 mW Vr (Pin)=5 V
PO=3 mW
PO=3 mW
CW, PO=3 mW
PO=3 mW
PO=3 mW
fc=720 kHz
∆f=30 kHz
PO=4 mW
Vr (Pin)=5 V
Vr (Pin)=5 V, f=1 MHz
Min.
1.7
760
0.08
9
20
0.2
–34
Typ.
45
52
1.9
780
0.15
18
35
0.45
–27
88
Max.
60
65
2.5
800
0.4
25
45
20
±3
±150
0.7
–20
150
30
Unit
mA
mA
V
nm
mA
deg
deg
%
deg
µm
mW/mA
µm
dB
nA
pF
∗∆ SR
Power
S
L SR
–7° 0° 7°
θ ||
—2—
∆ S
R =
| SL – SR |
SL + SR
Page 3
Example of Representative Characteristics
SLD104AV
Threshold current vs. Temperature characteristics
100
50
45
Ith-Threshold current (mA)
10
–10 0 25 50 100
Tc-Case temperature (°C)
PIN diode voltage current characteristics
I
Tc=25°C
PO=3mW
V
0.25 (mA)
Far field pattern (FFP)
1.0
0.5
Relative radiant intensity
0
–40 –20 0 20 40
Optical power output vs. Forward current characteristics
5
4
θ //
Angle (degree)
Tc=25°C Tc=50°C
PO=3mW
θ⊥
0–1.0
–0.25
Relative radiant intensity vs. Wavelength characteristics
PO=3mW
Relative radiant intensity
1.0 (V)
3
2
-Optical power output
O
P
1
0
Relative radiant intensity vs. Wavelength characteristics
Relative radiant intensity
20 40 60 80 100
F-Forward current (mA)
I
PO=5mW
778
779 780 781 782
λ-Wavelength (nm)
—3—
780
781 782 783 784
λ-Wavelength (nm)
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Package Outline Unit : mm
SLD104AV
M-260
Reference Slot
Reference Plane
LD Chip & Photo Diode
90°
0.25
0.5
3
0
φ5.6 – 0.05
φ4.4 MAX
φ3.7 MAX
1.0
12
123
3 – φ0.45
0.4
0.5 MIN
∗1.26
2.6 MAX
1.2 ± 0.1
6.5
SONY CODE
EIAJ CODE
JEDEC CODE
∗Optical
Distance = 1.35 ± 0.15
M-260
PCD φ2.0
PACKAGE WEIGHT
0.3g
—4—
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