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Index-Guided AlGaAs Laser Diode
For the availability of this product, please contact the sales office.
Description
The SLD114VS is an index-guided AlGaAs laser
diode with the excellent droop characteristics.
Features
• Low droop
• Small astigmatism
• Small package (φ5.6mm)
Applications
Laser beam printers
Structure
• AlGaAs double hetero structured laser diode
• PIN photodiode for optical power output monitor
SLD114VS
M-260
Recommended Operating Optical Power Output 3mW
Absolute Maximum Ratings (Tc = 25°C)
• Optical power output PO 5mW
•Reverse voltage VR LD 2 V
PD 15 V
• Operating temperature Topr –10 to +60 °C
• Storage temperature Tstg –40 to +85 °C
Connection Diagram
COMMON
3
LDPD
21
Pin Configuration
21
3
Bottom View
1. LD cathode
2. PD anode
3. COMMON
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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E94Y21-PP
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SLD114VS
Optical and Electrical Characteristics (Tc = 25°C) Tc: Case temperature
Item Symbol Conditions Min. Typ. Max. Unit
Threshold current
Operating current
Operating voltage
Wavelength
Radiation
angle
Perpendicular
Parallel
Position
Positional
accuracy
Angle
Differential efficiency
Astigmatism
Monitor current
Droop
Ith
Iop
Vop
λ
θ⊥
θ//
∆X, ∆Y, ∆Z
∆φ⊥
∆φ//
ηD
As
Im
∆P
PO = 3mW
PO = 3mW
PO = 3mW
PO = 3mW
PO = 3mW
PO = 3mW
PO = 3mW
PO = 3mW, Vr = 5V
PO = 3mW
10
20
—
760
20
6
—
—
—
0.1
—
0.3
—
25
40
1.9
780
30
10
—
—
—
0.25
5
0.5
—
45
60
2.5
800
45
15
±80
±3
±2
0.5
15
1.2
10
mA
mA
V
nm
degree
degree
µm
degree
degree
mW/mA
µm
mA
%
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Example of Representative Characteristics
Optical power output vs. Forward current characteristics
Optical power output vs. Monitor current characteristics
7
Tc = 10°C
6
Tc = 10°C
5
60°C
25°C
40°C
50°C
60°C
SLD114VS
Far field pattern (FFP)
Po = 3mW, Tc = 25°C
4
3
2
1
Po – Optical power output [mW]
0
0102030405060
I
F – Forward current [mA]
0 0.5 1.0 1.5 2.0 2.5
Imon – Monitor current [mA]
Threshold current vs. Temperature characteristics
100
80
60
θ⊥
Relative radiant intensity
–40 –30 –20 –10 0 10 20 30 40
Angle [degree]
θ//
Monitor current vs. Temperature characteristics
1.0
0.8
0.6
Po = 3mW
40
20
Ith – Threshold current [mA]
10
–20
0
Tc – Case Temperature [°C]
20 40 60 80
0.4
0.2
Im – Monitor current [mA]
0.1
–20 0 20 40 60 80
Tc – Case Temperature [°C]
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Po = 3mW
SLD114VS
Temperature dependence of spectrum
Tc = 60°C
Tc = 40°C
Tc = 25°C
Relative radiant intensity
Tc = 10°C
775 780 785 790 795
λ – Wavelength [nm]
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Power output dependence of spectrum
SLD114VS
Tc = 25°C
Po = 5mW
Po = 3mW
Relative radiant intensity
Po = 2mW
770 775 780 785 790
λ – Wavelength [nm]
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Package Outline Unit: mm
SLD114VS
M-260
Reference Slot
Reference Plane
LD Chip & Photo Diode
90°
0.25
0.5
3
0
φ5.6 – 0.05
φ4.4 MAX
φ3.7 MAX
1.0
12
123
3 – φ0.45
0.4
0.5 MIN
∗1.26
2.6 MAX
1.2 ± 0.1
6.5
SONY CODE
EIAJ CODE
JEDEC CODE
∗Optical
Distance = 1.35 ± 0.15
M-260
PCD φ2.0
PACKAGE WEIGHT
0.3g
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