Page 1
y2k
new!
MICROWAVE CORPORATION
HMC329
GaAs MMIC DOUBLE-BALANCED MIXER 25 - 40 GHz
4
MIXERS
FEBRUARY 2001
Features
Passive: No DC Bias Required
Input IP3 : +19 dBm
LO/RF Isolation: 38 to 42 dB
Small Size: 0.47 mm
2
V00.1200
General Description
The HMC329 chip is a miniature passive double
balanced mixer which can be used as an
upconverter or downconverter from 25 - 40 GHz
in a small chip area of 0.84 mm x 0.55 mm.
Excellent isolations are provided by on-chip
baluns, and the chip requires no external components and no DC bias. The mixer chip is
designed to be used in Local Multi- Point Distribution Systems (LMDS), microwave point to
point radios, and SATCOM applications. Measurements were made with the chip mounted
and ribbon bonded into in a 50-ohm microstrip
test fixture that contains 5-mil alumina substrates between the chip and K-connectors.
Measured data includes the parasitic effects of
the assembly. RF connections to the chip were
made with 0.076 mm (3-mil) ribbon bond with
minimal length <0.31mm (<12 mil).
DIE
Guaranteed Perf ormance, LO Drive= +13 dBm, - 55 to + 85 deg C
retemaraP mBd31+=OL stinU
.niM .pyT .xaM
OL&FR,egnaRycneuqerF 04-62zHG
FI,egnaRycneuqerF 8-CDzHG
ssoLnoisrevnoC 5.95.11Bd
)BSS(erugiFesioN 5.95.11Bd
noitalosIFRotOL8324Bd
noitalosIFIotOL5253Bd
noitalosIFIotFR1282Bd
)tupnI(3PI6191mBd
)tupnI(2PI5455mBd
)tupnI(noisserpmoCBd1811mBd
leveLevirDrotallicsOlacoL 51~9mBd
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
4 - 198
Page 2
MICROWAVE CORPORATION
GaAs MMIC DOUBLE-BALANCED MIXER 25 - 40 GHz
new!
HMC329
y2k
V00.1200
Conversion Gain vs.
Temperature @ LO= +13 dBm
0
-4
-8
-12
CONVERSION GAIN (dB)
-16
-20
22 24 26 28 30 32 34 36 38 40 42
FREQUENCY (GHz)
Conversion Gain vs. LO Drive
0
-4
-8
+25C
+85C
-55C
+7dBm
+9dBm
+11dBm
+13dBm
+15dBm
FEBRUARY 2001
Isolation @ LO = +13 dBm
0
-10
-20
-30
-40
ISOLATION(dB)
-50
-60
22 24 26 28 30 32 34 36 38 40 42
FREQUENCY (GHz)
LO / RF
RF / IF
LO / IF
Upconverter Performance
Conversion Gain @ LO= +13 dBm
0
-4
-8
4
MIXERS
-12
CONVERSION GAIN (dB)
-16
-20
22 24 26 28 30 32 34 36 38 40 42
FREQUENCY (GHz)
-12
CONVERSION GAIN (dB)
-16
-20
22 24 26 28 30 32 34 36 38 40
FREQUENCY (GHz)
IF Bandwidth @ LO= +13 dBm
0
-4
-8
-12
RESPONSE(dB)
-16
-20
0123456789101112
FREQUENCY (GHz)
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
IF Return Loss
Conversion Gain
DIE
4 - 199
Page 3
y2k
new!
4
MICROWAVE CORPORATION
GaAs MMIC DOUBLE-BALANCED MIXER 25 - 40 GHz
FEBRUARY 2001
Input IP3 vs. LO Drive
25
20
15
IP3(dBm)
10
5
0
26 28 30 32 34 36 38 40
FREQUENCY (GHz)
Input IP2 vs. LO Drive
70
+11dBm
+13dBm
+15dBm
HMC329
Input IP3 vs.
Temperature @ LO= +13 dBm
25
20
15
IP3(dBm)
10
5
0
26 28 30 32 34 36 38 40
FREQUENCY (GHz)
Input IP2 vs.
Temperature @ LO= +13 dBm
70
+25C
+85C
-55C
V00.1200
MIXERS
DIE
65
60
55
IP2(dBm)
50
45
40
26 28 30 32 34 36 38 40
MXN Spurious Outputs
as a Down Converter
FRm
0xx7
1910 14
2967576
3479617
44747
+11dBm
+13dBm
+15dBm
FREQUENCY (GHz)
OLn
0 1 2 3 4
mBd01-@zHG13=FR
mBd31+@zHG23=OL
65
60
55
IP2(dBm)
50
45
40
26 28 30 32 34 36 38 40
FREQUENCY (GHz)
+25C
+85C
-55C
Input P1dB vs.
Temperature @ LO = +13 dBm
15
13
11
9
P1dB (dBm)
+25C
7
.levelrewoptuptuoFIehtwolebcBdniseulavllA
5
26 28 30 32 34 36 38 40
FREQUENCY (GHz)
+85C
-55C
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
4 - 200
Page 4
MICROWAVE CORPORATION
GaAs MMIC DOUBLE-BALANCED MIXER 25 - 40 GHz
new!
HMC329
y2k
V00.1200
Schematic
RF
IF
LO
Absolute Maximum Ratings
tupnIFI/FRmBd31+
evirDOLmBd72+
tnerruCCDFIAm2±
erutarepmeTegarotSCged051+ot56-
erutarepmeTgnitarepOCged521+ot55-
FEBRUARY 2001
Outline Drawing ( See Die Handling, Mounting, Bonding Note Page 4-202)
Backside of chip is ground.
Connections are not required for
unlabeled bondpads.
4
MIXERS
DIE
ALL DIMENSION IN INCHES (MILLIMETERS)
ALL TOLERANCES ARE ±0.025 (0.001)
DIE THICKNESS IS 0.100 (0.004) BACKSIDE IS GROUND
BOND PADS ARE 0.100 (0.004) SQUARE
BOND PAD SPACING, CTR-CTR: 0.150 (0.006)
BACKSIDE METALLIZATION : GOLD
BOND PAD METALLIZATION : GOLD
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
4 - 201
Page 5
y2k
new!
4
MICROWAVE CORPORATION
GaAs MMIC DOUBLE-BALANCED MIXER 25 - 40 GHz
FEBRUARY 2001
MIC Assembly Techniques for HMC329
3 mil Ribbon Bond
HMC329
V00.1200
3 mil Ribbon Bond
MIXERS
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
DIE
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general
Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended
for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of
the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick
molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2).
Microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length.
Typical die-to-substrate spacing is 0.076mm (3 mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length
<0.31 mm ( <12 mils) is recommended to minimize inductance on RF, LO & IF ports.
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
4 - 202
Page 6
MICROWAVE CORPORATION
GaAs MMIC DOUBLE-BALANCED MIXER 25 - 40 GHz
new!
HMC329
y2k
V00.1200
FEBRUARY 2001
Handling Precautions
Follow these precautions to avoid permanent damage.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid
cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes ( see page 8 - 2 ).
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and
bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically
conductive epoxy. The mounting surface should be clean and flat.
Eutectic Die Attach:
A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be
290 deg. C.
DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more
than 3 seconds of scrubbing should be required for attachment.
4
MIXERS
DIE
Epoxy Die Attach:
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around
the perimeter of the chip once it is placed into position.
Cure epoxy per the manufacturer's schedule.
Wire Bonding
Wire bonds of 0.025 mm (1 mil) diameter are recommended. Thermosonic wirebonding with a nominal
stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to
22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds.
Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be
as short as possible <0.31 mm (12 mils).
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
4 - 203
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