Datasheet HMC324MS8G Datasheet (Hittite)

MICROWAVE CORPORATION

HBT DUAL DRIVER AMPLIFIER DC - 3.0 GHz

HMC324MS8G

FEBRUARY 2001

Features

P1dB Output Power: + 16 dBm

1

Output IP3: +31 dBm

Single Supply: 8.75V

Ultra Small Package: MSOP8G

AMPLIFIERS

SMT

V00.1200

General Description

The HMC324MS8G is a high efficiency GaAs
InGaP Heterojunction Bipolar Transistor (HBT)
MMIC amplifier that contains two un-connected
amplifiers in parallel inside an 8 lead MSOPG
package. When used in conjunction with an
external balun, the outputs of the amplifier can
be combined to reduce the 2nd harmonic distor­tion that is generated by the amplifier. With Vcc
at +7.5V, the HMC324MS8G offers 13 dB of
gain and with power combining and harmonic
cancellation, +22 dBm of output power can be
achieved. Using a Darlington feedback pair re­sults in reduced sensitivity to normal process
variations and provides a good 50-ohm input/
output port match. This amplifier is ideal for RF
systems where high linearity is required. The
design can operate in 50-ohm and 75-ohm sys­tems which makes it ideal for CATV head-end
and modem, and MCNS applications.

Guaranteed Perf ormance,

retemaraP

egnaRycneuqerF 0.3-CDzHG

C°52@niaG 013161Bd

erutarepmeTrevonoitairaVniaG 510.0520.0/BdC°

ssoLnruteRtupnI 831Bd

ssoLnruteRtuptuO 69 Bd

noitalosIesreveR 6102Bd

zHG1@)tasP(rewoPtuptuOdetarutaS 6191mBd

zHG1@)3PI(tpecretnIredrOdrihTtuptuO 8213mBd

erugiFesioN 6Bd

)ccI(tnerruCylppuS 75Am

Note: All specifications refer to a single amplifier.

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

-40 to +60 deg C

R,V57.8=sV

SAIB

mhO22=

.niM .pyT .xaM stinU

zHG1@)Bd1P(noisserpmoCBd1rofrewoPtuptuO 3161mBd

1 - 156

MICROWAVE CORPORATION

HBT DUAL DRIVER AMPLIFIER DC - 3.0 GHz

HMC324MS8G

V00.1200

Gain & Return Loss

20
15
10

5
0

-5

-10

RESPONSE (dB)

-15

-20

-25
0123456

S11
S21
S22

FREQUENCY (GHz)

Input Return Loss vs. Temperature

0

+25C

-5

-10

+85C

-40 C

FEBRUARY 2001

Gain vs. Temperature

20
18
16
14
12
10

GAIN (dB)

8
6
4
2
0

00.511.522.533.54

+25C
+85C

-40C

FREQUENCY (GHz)

Output Return Loss vs. Temperature

0

+25C

-5

-10

+85C

-40C

1

AMPLIFIERS

SMT

-15

INPUT R ETUR N L OSS (dB )

-20

00.511.522.533.54

FREQUENCY (GHz)

-15

OUTPUT RETURN LOSS (dB)

-20

00.511.522.533.54
FREQUENCY (GHz)

Reverse Isolation vs. Temperature

0

-5

-10

-15

-20

REVERSE ISOLATION (dB)

-25

-30

00.511.522.533.54
FREQUENCY (GHz)

+25C
+85C

-40 C

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

1 - 157

MICROWAVE CORPORATION

HBT DUAL DRIVER AMPLIFIER DC - 3.0 GHz

HMC324MS8G

FEBRUARY 2001

P1dB vs. Temperature Psat vs. Temperature

1

P1dB (dBm)

AMPLIFIERS

SMT

Power Compression @ 1 GHz

Pout (dBm ), GA I N (d B ), P A E (%)

24
22
20
18
16
14
12
10

8
6
4

00.511.522.533.54
FREQUENCY (GHz)

20
18
16
14
12
10

8
6
4
2
0

-2

-4

-6

-8

-10

-20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8
INPUT POWER (dBm)

Pout
Gain
PAE

+25C
+85C

-40C

24
22
20
18
16
14
12

Psat (dBm)

10

8
6
4

00.511.522.533.54
FREQUENCY (GHz)

Power Compression @ 2 GHz

20
18
16
14
12
10

8
6
4
2
0

-2

-4

Pout (dBm ), GA I N (d B ), P A E (%)

-6

-8

-10

-20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8
INPUT POWER (dBm)

Pout
Gain
PAE

V00.1200

+25C
+85C

-40C

Output IP3 vs. Temperature

34
32
30
28
26
24

IP3 (dBm)

22
20
18
16
14

00.511.522.533.54
FREQUENCY (GHz)

+25C
+85C

-40C

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

1 - 158

MICROWAVE CORPORATION

HBT DUAL DRIVER AMPLIFIER DC - 3.0 GHz

HMC324MS8G

V00.1200

Schematic

CBLOCK

IN 1

PIN 5

GND

(PINS2,3, 5,6)

IN 2

PIN 8

Outline

Vcc

OUT1
PIN 4

Vcc

OUT 2

PIN 1

VS (8.75V)

RBIAS (22 Ohm)

CBLOCK

RBIAS (22 Ohm)

VS (8.75V)

FEBRUARY 2001

Absolute Maximum Ratings

1niPnoegatloVCDstloV8

)V5+=ccV()niFR(rewoPtupnImBd02+

)cT(erutarepmeTlennahCC°571

)C°06=aT(ssidPsuounitnoC

)C°06evobaC°/Wm14.4etared(

erutarepmeTegarotSC°051+ot56-

erutarepmeTgnitarepOC°06+ot55-

Note:

1. Select RBIAS to achieve desired Vcc voltage
on Pin 1.

2. External blocking capacitors are required on
Pins 1, 4, 5, and 8.

Wm705

1

AMPLIFIERS

SMT

1. MATERIAL:
A) PACKAGE BODY - LOW STRESS INJECTION-MOLDED PLASTIC,
SILICA & SILICONE IMPREGNATED.
B) LEADFRAME MATERIAL: COPPER ALLOY

2 . PLATING : LEAD - TIN SOLDER PLATE

3. DIMENSIONS ARE IN INCHES (MILLIMETERS).

UNLESS OTHERWISE SPECIFIED ALL TOL. ARE ±0.005 (±0.13).

4. CHARACTERS TO BE HELVETICA MEDIUM, APPROX .020 HIGH
WHITE INK, LOCATED APPROXIMATELY AS SHOWN.

5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15 MM PER SIDE

6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25 MM PER SIDE

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

1 - 159

MICROWAVE CORPORATION

HBT DUAL DRIVER AMPLIFIER DC - 3.0 GHz

HMC324MS8G

FEBRUARY 2001

Evaluation PCB for HMC324MS8G

1

AMPLIFIERS

SMT

V00.1200

The circuit board used in the final application should use RF circuit design techniques. Signal lines should have
50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the
ground plane similar to that shown above. A sufficient number of VIA holes should be used to connect the top
and bottom ground planes. The evaluation circuit board as shown is available from Hittite upon request.

Evaluation Circuit Board Layout Design Details

metI noitpircseD

4J-1J rotcennoCAMStnuoMCP

1U G8SM423CMH

*BCP "5.1x"5.1BCPnoitaulavE122401

0534sregoR:lairetaMdraoBtiucriC*

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

1 - 160

MICROWAVE CORPORATION

HBT DUAL DRIVER AMPLIFIER DC - 3.0 GHz

HMC324MS8G

V00.1200

NOTES:

FEBRUARY 2001

1

AMPLIFIERS

SMT

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

1 - 161