Datasheet HMC306MS10 Datasheet (Hittite)

MICROWAVE CORPORATION

0.5 dB LSB GaAs IC 5 - BIT DIGITAL ATTENUATOR 0.7 - 4 GHz

HMC306MS10

2

ATTENUATORS

SMT

FEBRUARY 2001

Features

0.5 dB LSB STEPS to 15.5 dB

General Description

The HMC306MS10 is a broadband 5-bit posi­tive control GaAs IC digital attenuator in a 10

SINGLE POSITIVE CONTROL PER BIT
+/- 0.25 dB TYPICAL BIT ERROR
MINIATURE MSOP-10 PACKAGE: 14.8 mm²

lead MSOP surface mount plastic package.
Covering 0.7 to 4 GHz, the insertion loss is
typically less than 1.5 to 2.3 dB. The attenua­tor bit values are 0.5 (LSB), 1, 2, 4 and 8 for a
total attenuation of 15.5 dB. Attenuation accu­racy is excellent at ± 0.25 dB typical with an
IIP3 of up to +52 dBm. Five bit control voltage
inputs, toggled between 0 and +3 to +5V, are
used to select each attenuation state at less
than 50 uA each. A single Vdd bias of +3 to
+5V applied through an external 5KΩ resistor
is required. The HMC306MS10 is ideal for
cellular, PCS, ISM, MMDS, and WLL applica­tions while occupying less than 14.8 mm².

Guaranteed Performance

With Vdd =+3V to +5V & Vctl = 0/Vdd (Unless Otherwise Stated), -40 to +85 deg C

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Parameter Frequency Min. Typ. Max. Units

0.7 - 1.4 GHz

Insertion Loss

Attenuation Range 15.5 dB

ReturnLoss (RF1 & RF2,All Atten.States)

Attenuation Accuracy:(Referenced to Insertion Loss)
All Attenuation States
All Attenuation States
All Attenuation States

0.5 - 13.5 dB States
14 - 15.5 dB States

Input Power for 0.1 dB Compression Vdd= 5V
Input Third Order Intercept Point

(Tw o-Tone Input Power = 0dBm Each)
Switching Characteristics

tRISE, tFALL (10/90%RF)
tON/tOFF (50% CTL to 10/90% RF)

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

Vdd= 3V
Vdd= 5V

Vdd= 3V

1.4 - 2.3 GHz

2.3 - 2.7 GHz

2.7 - 4.0 GHz

0.7 - 1.4 GHz

1.4 - 2.3 GHz

2.3 - 2.7 GHz

2.7 - 4.0 GHz

0.7 - 1.4 GHz

1.4 - 2.3 GHz

2.3 - 2.7 GHz

2.7 - 4.0 GHz

2.7 - 4.0 GHz

0.7-4.0 GHz 25

0.7-4.0 GHz 52

0.7 - 4.0 GHz

15
14
13
10

± 0.30 + 3% of A tten.S etting Max
± 0.25 + 2% of A tten.S etting Max
± 0.25 + 3% of A tten.S etting Max
± 0.30 + 3% of A tten.S etting Max
± 0.35 + 5% of Atten.Setting Max

1.3

1.5

1.8

2.3

21
18
16
13

23

48

560
600

1.6

2.0

2.5

2.7

dB
dB
dB
dB

dB
dB
dB
dB

dB
dB
dB
dB
dB

dBm
dBm

dBm
dBm

ns

ns

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MICROWAVE CORPORATION

0.5 dB LSB GaAs IC 5 - BIT DIGITAL ATTENUATOR 0.7- 4 GHz

HMC306MS10

V00.0600

Insertion Loss

0

-0.5

-1

-1.5

-2

-2.5

INSERTION LOSS (dB)

-3

-3.5

-4

0.5 1 1.5 2 2.5 3 3.5 4

-40 C

+85 C

FREQUENCY (GHz)

+25 C

Normalized Attenuation

(Only Major States are Shown)

0

-2

-4

-6

-8

-10

-12

-14

NORMALIZED ATTENUATION (dB)

-16

-18

0.5 1 1.5 2 2.5 3 3.5 4

2dB

4dB

15.5 dB 8 dB

FREQUENCY (GHz)

1dB

0.5 dB

FEBRUARY 2001

Return Loss RF1, RF2

Only Major States are Shown)

(

0

-5

-10

2dB

-15

-20

RETURN LOSS (dB)

-25

-30

0.5 1 1.5 2 2.5 3 3.5 4

0.5 dB

4dB

15.5 dB

1dB

FREQUENCY (GHz)

8dB

Absolute Bit Error vs Attenuation State

1.5

1.2

0.9

2.4 GHz

0.6

BIT ERROR (dB)

0.3

0

0.5 2 3.5 5 6.5 8 9.5 11 12.5 14 15.5
ATTENUATION STATE (dB)

1.9 GHz

3.5 GHz

0.9 GHz

2

ATTENUATORS

SMT

Note: All Data Typical Over Voltage (+3V to +5V) & Temperature (-40 to +85 deg.C).

S-Parameter data is available On-Line at www.hittite.com

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

2 - 75

MICROWAVE CORPORATION

0.5 dB LSB GaAs IC 5 - BIT DIGITAL ATTENUATOR 0.7- 4 GHz

HMC306MS10

2

ATTENUATORS

SMT

FEBRUARY 2001

Absolute Bit Error vs Frequency

Only Major States are Shown)

(

1.5

1.2

8dB

0.9

0.6

BIT ERROR (dB)

0.3

0

0.5 1 1.5 2 2.5 3 3.5 4

0.5, 1, 2 dB

15.5 dB

FREQUENCY (GHz)

4dB

Functional Diagram/
Application Circuit

PIN NUMBER

V5

1

0.5 dB

10

100 pF

C1

Relative Phase vs Frequency

Only Major States are Shown)

(

60

40

20

0

RELATIVE PHASE (deg.)

-20

-40

0.5 1 1.5 2 2.5 3 3.5 4

FREQUENCY (GHz)

T ruth Table

Control Voltage Input

V1

8dBV24dBV32dBV41dBV50.5dB

High High High High High

High High High High Low 0.5 dB

RF1

High High High Low High 1dB

15.5 dB

0.5, 1 dB

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8dB

4dB

2dB

Attenuation

State

RF1 - RF2

Reference

I.L.

V4

2

V3

3

V2

4

V1

5

DC Blocking capacitors C1 & C2 are required on RF1 & RF2. Choose
C1 = C2 = 100 ~ 300 pF to allow lowest customer specific frequency to
pass with minimal loss. R1 = 5KΩ is required to supply voltage to the
circuit through either PIN 6 or PIN 10.

1 dB

2 dB

4 dB

8 dB

9

8

7

100 pF

6

R1

5 k W

Vdd

RF2

C2

High High Low High High 2dB

High Low High High High 4dB

Low High High High High 8dB

Low Low Low Low Low

Anycombination of above states will p rovide an
attenuation approximately equal to the sum of the bits
selected.

15.5 dB

Max Atten.

Control & Bias Voltages

State Bias Condition

Low 0 to +0.2V@ 20uA Max

High Vdd ± 0.2V @ 100 uA Max

Note: Vdd = +3V to 5V ± 0.2 V

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

2 - 76

MICROWAVE CORPORATION

0.5 dB LSB GaAs IC 5 - BIT DIGITAL ATTENUATOR 0.7- 4 GHz

HMC306MS10

V00.0600

Absolute Maximum Ratings

Control Voltage (V1 - V5) Vdd + 0.5 Vdc
Bias Voltage (Vdd) +8.0 Vdc

Storage Temperature -6 5 to +150 deg C
Operating Temperature - 40 to +85 deg C
RF Input Power (0.7 - 4 GHz) +28 dBm

Outline

FEBRUARY 2001

2

ATTENUATORS

SMT

1. MATERIAL:
A) PACKAGE BODY - LOW STRESS INJECTION-MOLDED PLASTIC.
B) LEADFRAME MATERIAL: COPPER ALLOY

2 . PLATING : LEAD - TIN SOLDER PLATE

3. DIMENSIONS ARE IN INCHES (MILLIMETERS).
UNLESS OTHERWISE SPECIFIED ALL TOL. ARE ±0.005(±0.13).

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15 MM PER SIDE

5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25 MM PER SIDE

2 - 77

MICROWAVE CORPORATION

0.5 dB LSB GaAs IC 5 - BIT DIGITAL ATTENUATOR 0.7 - 4 GHz

HMC306MS10

2

ATTENUATORS

SMT

FEBRUARY 2001

Evaluation Circuit Board

V00.0600

* R2 - R6 = 100 Ω .
These resistors are optional and

may be used to enhance
decoupling of the RF path from
the control inputs.

The circuit board used in the final application should use RF circuit design techniques. Signal lines should have
50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to
that shown above. A sufficient number of VIA holes should be used to connect the top and bottom ground planes.
The evaluation circuit board as shown is available from Hittite upon request.

Evaluation Circuit Board Layout Design Details

Item Description

J1 - J2 PC Mount SMA Connector
J3 - J8 DC Pin
R1 5k Ω Resistor, 0402 Pkg.
R2 - R6 100 Ω Resistor, 0402 Pkg.
C1, C2 0402 Chip Capacitor, Select Value for

Lowest Frequency
U1 HMC306MS10 Digital Attenuator
PCB* 103391 Evaluation PCB 1.5" x 1.5"

*Circuit Board Material: Rogers 4350

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

2 - 78

MICROWAVE CORPORATION

0.5 dB LSB GaAs IC 5 - BIT DIGITAL ATTENUATOR 0.7 - 4 GHz

HMC306MS10

V00.0600

NOTES:

FEBRUARY 2001

2

ATTENUATORS

SMT

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

2 - 79