Page 1
y2k
new!
MICROWAVE CORPORATION
HMC292
GaAs MMIC DOUBLE-BALANCED MIXER 18 - 32 GHz
4
MIXERS
FEBRUARY 2001
Features
INPUT IP3: +19 dBm
LO/RF ISOLATION: 33 to 43 dB
PASSIVE : NO DC BIAS REQ'D
SMALL SIZE: 0.89 mm x 1.04 mm
V01.1000
General Description
The HMC292 chip is a miniature passive
double-balanced mixer which can be used
as an upconverter or downconverter from 18
- 32 GHz in a small chip area of 0.93 mm2.
Excellent isolations are provided by on-chip
baluns, which require no external components and no DC bias. The mixer chip is
designed to be used in Local Multi- Point
Distribution Systems (LMDS), microwave
point to point radios, and SATCOM applications. All data is measured with the chip in
a 50 ohm test fixure connected via 0.025 mm
(1 mil) diameter wire bonds of minimal length
<0.31 mm (<12 mils).
Guaranteed Performance With LO Drive of +13 dBm, -55 to +85 deg C
DIE
retemaraP
OL&FR,egnaRycneuqerF03-0223-81zHG
FI,egnaRycneuqerF8-CD8-CDzHG
ssoLnoisrevnoC5.79 801Bd
)BSS(erugiFesioN5.79 801Bd
noitalosIFRotOL13830363Bd
noitalosIFIotOL33040304Bd
noitalosIFIotFR02527152Bd
)tupnI(3PI71915191mBd
)tupnI(2PI54052405mBd
)tupnI(noisserpmoCniaGBd1821821mBd
leveLevirDrotallicsOlacoL51~851~8mBd
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
4 - 170
.niM .pyT .xaM .niM .pyT .xaM stinU
mBd31+=OL mBd31+=OL
Page 2
MICROWAVE CORPORATION
HMC292 DOUBLE-BALANCED MIXER 18 - 32 GHz
new!
HMC292
y2k
V01.1000
Conversion Gain vs. Temperature
@ LO = +13 dBm
0
+85 C
-5
-10
-15
CONVERSION GAIN (dB)
-20
15 20 25 30 35
+25 C
FREQUENCY (GHz)
-55 C
Conversion Gain vs. LO Drive
0
+15 dBm
-5
-10
+13 dBm
FEBRUARY 2001
Isolation @ LO = +13 dBm
0
-10
-20
-30
-40
ISOLATION (dB)
-50
-60
15 20 25 30 35
RF/IF
LO/RF
FREQUENCY (GHz)
RF & LO Return Loss
@ LO = +13 dBm
0
-5
-10
LO/IF
4
MIXERS
+10 dBm
-15
CONVERSION GAIN (dB)
+8 dBm
-20
15 20 25 30 35
FREQUENCY (GHz)
RETURN LOSS (dB)
-15
RF
-20
10 20 30 40
FREQUENCY (GHz)
LO
Upconverter Performance
IF Bandwidth @ LO = +13 dBm
0
-5
Return Loss
-10
-15
-20
IF CONVERSION GAIN & RETURN LOSS (dB)
0246810
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
Conversion Gain
IF FREQUENCY (GHz)
Conversion Gain @ LO = +13dBm
0
-5
-10
-15
CONVERSION GAIN (dB)
-20
15 20 25 30 35
FREQUENCY (GHz)
4 - 171
DIE
Page 3
y2k
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4
MIXERS
DIE
MICROWAVE CORPORATION
HMC292 DOUBLE-BALANCED MIXER 18 - 32 GHz
FEBRUARY 2001
Input IP3 vs. LO Drive
25
20
15
10
5
INPUT IP3 (dBm)
0
-5
15 20 25 30 35
Input IP2 vs. LO Drive
80
70
60
50
40
30
INPUT IP2 (dBm)
20
10
0
15 20 25 30 35
+13 dBm
+10 dBm
+8 dBm
FREQUENCY (GHz)
+10 dBm
+13 dBm
+8 dBm
FREQUENCY (GHz)
HMC292
Input IP3 vs. Temperature
@ LO = +13 dBm
25
20
15
+25C
10
5
INPUT IP3 (dBm)
0
-5
15 20 25 30 35
FREQUENCY (GHz)
Input IP2 vs. Temperature
@ LO = +13 dBm
80
70
60
50
40
30
INPUT IP2 (dBm)
20
10
0
-55C
+25C
15 20 25 30 35
FREQUENCY (GHz)
+85C
V01.1000
+85C
-55C
Input P1dB vs. Temperature
@ LO = +13 dBm
15
+25 C
13
11
9
INPUT P1dB
7
5
15 20 25 30 35
FREQUENCY (GHz)
-55 C
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
4 - 172
+85 C
MXN Spurious Outputs
OLn
FRm 0 1 2 3 4
0xx11
171093
2077767
3399668
4011>011>011>
mBd01-@zHG12=FR
mBd31+@zHG22=OL
levelrewopFIehtwolebcBdniseulavllA
Page 4
MICROWAVE CORPORATION
HMC292 DOUBLE-BALANCED MIXER 18 - 32 GHz
new!
HMC292
y2k
V01.1000
Schematic
RF
IF
LO
Absolute Maximum Ratings
tupnIFI/FRmBd31+
evirDOLmBd72+
erutarepmeTegarotSCged051+ot56-
erutarepmeTgnitarepOCged521+ot55-
Outline Drawing (See Handling Mounting Bonding Note Page 4-174)
Backside of chip is ground.
Connections are required for
bondpads marked with "X".
FEBRUARY 2001
4
MIXERS
ALL DIMENSIONS ARE IN INCHES
DIE THICKNESS IS .004"
BOND PADS ARE .004" SQUARE
BOND PAD SPACING CENTER TO CENTER IS .006" TYPICAL
BACKSIDE METALIZATION: GOLD
BOND PAD METALIZATION: GOLD
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
4 - 173
DIE
Page 5
y2k
new!
4
MICROWAVE CORPORATION
HMC292 DOUBLE-BALANCED MIXER 18 - 32 GHz
FEBRUARY 2001
MIC Assembly Techniques for HMC292
HMC292
V01.1000
MIXERS
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
DIE
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general
Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended
for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of
the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick
molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2).
Microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length.
Typical die-to-substrate spacing is 0.076mm (3 mils). Gold wire of 0.025 mm(1 mil) diameter and minimal length
<0.31 mm ( <12 mils) is recommended to minimize inductance on RF, LO & IF ports.
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
4 - 174
Page 6
MICROWAVE CORPORATION
HMC292 DOUBLE-BALANCED MIXER 18 - 32 GHz
new!
HMC292
y2k
V01.1000
FEBRUARY 2001
Handling Precautions
Follow these precautions to avoid permanent damage.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid
cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes ( see page 8 - 2 ).
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and
bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically
conductive epoxy. The mounting surface should be clean and flat.
Eutectic Die Attach:
A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be
290 deg. C.
DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more
than 3 seconds of scrubbing should be required for attachment.
4
MIXERS
DIE
Epoxy Die Attach:
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around
the perimeter of the chip once it is placed into position.
Cure epoxy per the manufacturer's schedule.
Wire Bonding
Wire bonds of 0.025 mm (1 mil) diameter are recommended. Thermosonic wirebonding with a nominal
stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to
22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds.
Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be
as short as possible <0.31 mm (12 mils).
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
4 - 175
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