ANALOG DEVICES AD679 Service Manual

14-Bit 128 kSPS
a
FEATURES AC and DC Characterized and Specified
(K, B, T Grades) 128k Conversions per Second 1 MHz Full Power Bandwidth 500 kHz Full Linear Bandwidth 78 dB S/N+D (K, B, T Grades) Twos Complement Data Format (Bipolar Mode) Straight Binary Data Format (Unipolar Mode) 10 MInput Impedance 8-Bit Bus Interface On-Board Reference and Clock 10 V Unipolar or Bipolar Input Range Pin Compatible with AD678 12-Bit, 200 kSPS ADC MIL-STD-883 Compliant Versions Available

GENERAL DESCRIPTION

The AD679 is a complete, multipurpose 14-bit monolithic analog-to-digital converter, consisting of a sample-and-hold am­plifier (SHA), a microprocessor-compatible bus interface, a volt­age reference, and clock generation circuitry.
The AD679 is specified for ac (or dynamic) parameters such as S/N+D ratio, THD, and IMD, which are important in signal processing applications. In addition, the AD679K, B, and T grades are fully specified for dc parameters that are important in measurement applications.
The 14 data bits are accessed in two read operations (8 + 6), with left justification. Data format is straight binary for unipolar mode and twos complement binary for bipolar mode. The input has a full-scale range of 10 V with a full power bandwidth of 1 MHz and a full linear bandwidth of 500 kHz. High input impedance (10 M) allows direct connection to unbuffered sources without signal degradation. Conversions can be initiated either under microprocessor control or by an external clock asynchronous to the system clock.
This product is fabricated on Analog Devices’ BiMOS process, combining low power CMOS logic with high precision, low noise bipolar circuits; laser-trimmed thin-film resistors provide high accuracy. The converter utilizes a recursive subranging algorithm that includes error correction and flash converter circuitry to achieve high speed and resolution.
The AD679 operates from +5 V and ±12 V supplies and dissipates 560 mW (typ). The part is available in 28-lead plastic DIP, ceramic DIP, and 44 J-leaded ceramic surface-mount packages.
*Protected by U.S. Patent Nos. 4,804,960; 4,814,767; 4,833,345; 4,250,445;
4,808,908; RE 30,586
REV. D
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
Complete Sampling ADC
AD679

FUNCTIONAL BLOCK DIAGRAM

PRODUCT HIGHLIGHTS

1. COMPLETE INTEGRATION: The AD679 minimizes external component requirements by combining a high speed sample-and-hold amplifier (SHA), ADC, 5 V refer­ence, clock, and digital interface on a single chip. This provides a fully specified sampling A/D function unattain­able with discrete designs.
2. SPECIFICATIONS: The AD679K, B, and T grades provide fully specified and tested ac and dc parameters. The AD679J, A, and S grades are specified and tested for ac parameters; dc accuracy specifications are shown as typicals. DC specifica­tions (such as INL, gain, and offset) are important in control and measurement applications. AC specifications (such as S/N+D ratio, THD, and IMD) are of value in signal process­ing applications.
3. EASE OF USE: The pinout is designed for easy board layout, and the two-read output provides compatibility with 8-bit buses. Factory trimming eliminates the need for calibration modes or external trimming to achieve rated performance.
4. RELIABILITY: The AD679 utilizes Analog Devices’ mono­lithic BiMOS technology. This ensures long-term reliability compared to multichip and hybrid designs.
5. UPGRADE PATH: The AD679 provides the same pinout as the 12-bit, 200 kSPS AD678 ADC.
6. The AD679 is available in versions compliant with MIL­STD-883. Refer to the Analog Devices Military Products Databook or current AD679/883B data sheet for detailed specifications.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 © 2004 Analog Devices, Inc. All rights reserved.
*
AD679–SPECIFICATIONS
(T
to T
, VCC = +12 V 5%, VEE = –12 V 5%, VDD = +5 V 10%, f
MAX
1

AC SPECIFICATIONS

MIN
unless otherwise noted)
AD679J/A/S AD679K/B/T
Parameter Min Typ Max Min Typ Max Unit
SIGNAL-TO-NOISE AND DISTORTION (S/N+D) RATIO
2
–0.5 dB Input (Referred to –0 dB Input) 76 79 78 81 dB –20 dB Input (Referred to –20 dB Input) 58 59 60 61 dB –60 dB Input (Referred to –60 dB Input) 18 19 20 21 dB
TOTAL HARMONIC DISTORTION (THD)
3
@ 25°C –90 –82 –90 –82 dB
0.003 0.006 0.003 0.006 %
to T
T
MIN
MAX
–88 –82 –88 –82 dB
0.004 0.008 0.004 0.008 %
PEAK SPURIOUS OR PEAK HARMONIC COMPONENT –90 –82 –90 –82 dB
FULL POWER BANDWIDTH 1 1 MHz
FULL LINEAR BANDWIDTH 500 500 kHz
INTERMODULATION DISTORTION (IMD)
4
2nd Order Products –90 –82 –90 –82 dB 3rd Order Products –90 –82 –90 –82 dB
NOTES
1
flN amplitude = –0.5 dB (9.44 V p-p) bipolar mode full scale unless otherwise indicated. All measurements referred to a –0 dB (9.997 V p-p) input signal unless otherwise noted.
2
See TPC 3 for higher frequencies and other input amplitudes.
3
See TPCs 1 and 2 for higher frequencies and other input amplitudes.
4
fA = 9.08 kHz, fB = 9.58 kHz, with f
Specifications subject to change without notice.
100 kSPS. See Definition of Specifications section.
SAMPLE
= 128 kSPS, fIN = 10.009 kHz,
SAMPLE

DIGITAL SPECIFICATIONS

(All device types T
MIN
to T
, VCC = +12 V 5%, VEE = –12 V 5%, VDD = +5 V 10%)
MAX
Parameter Test Conditions Min Max Unit
LOGIC INPUTS
V
IH
V
IL
I
IH
I
IL
C
IN
High Level Input Voltage 2.0 V
DD
Low Level Input Voltage 0 0.8 V High Level Input Current VIN = 5 V –10 +10 µA Low Level Input Current VIN = 0 V –10 +10 µA Input Capacitance 10 pF
V
LOGIC OUTPUTS
V
OH
V
OL
I
OZ
C
OZ
NOTES
1
flN amplitude = –0.5 dB (9.44 V p-p) bipolar mode full scale unless otherwise indicated. All measurements referred to a –0 dB (9.997 V p-p) input signal unless otherwise noted.
2
See TPC 3 for higher frequencies and other input amplitudes.
3
See TPCs 1 and 2 for higher frequencies and other input amplitudes.
4
fA = 9.08 kHz, fB = 9.58 kHz, with f
Specifications subject to change without notice.
High Level Output Voltage IOH = 0.1 mA 4.0 V
= 0.5 mA 2.4 V
I
OH
Low Level Output Voltage IOL = 1.6 mA 0.4 V High Z Leakage Current VIN = 0 or 5 V –10 +10 µA High Z Output Capacitance 10 pF
100 kSPS. See Definition of Specifications section.
SAMPLE
–2–
REV. D
(T
to T

DC SPECIFICATIONS

MIN
, VCC = +12 V 5%, VEE = –12 V 5%, VDD = +5 V 10%, unless otherwise noted)
MAX
AD679J/A/S AD679K/B/T
Parameter Min Typ Max Min Typ Max Unit
TEMPERATURE RANGE
J, K Grades 0 70 0 70 °C A, B Grades –40 +85 –40 +85 °C S, T Grades –55 +125 –55 +125 °C
ACCURACY
Resolution 14 14 Bits Integral Nonlinearity (INL) 2 1 2.5 LSB Differential Nonlinearity (DNL) 14 14 Bits Unipolar Zero Error Bipolar Zero Error1 (@ 25°C) 0.08 0.05 0.07 % FSR Gain Error
1, 3
Temperature Drift
Unipolar Zero
1
(@ 25°C) 0.08 0.05 0.07 % FSR
(@ 25°C) 0.12 0.09 0.11 % FSR
4
J, K Grades 0.04 0.04 0.05 % FSR A, B Grades 0.05 0.05 0.07 % FSR S, T Grades 0.09 0.09 0.10 % FSR
Bipolar Zero
4
J, K Grades 0.02 0.02 0.04 % FSR A, B Grades 0.04 0.04 0.05 % FSR S, T Grades 0.08 0.08 0.09 % FSR
4
Gain
J, K Grades 0.09 0.09 0.11 % FSR A, B Grades 0.10 0.10 0.16 % FSR S, T Grades 0.20 0.20 0.25 % FSR
5
Gain
J, K Grades 0.04 0.04 0.05 % FSR A, B Grades 0.05 0.05 0.07 % FSR S, T Grades 0.09 0.09 0.10 % FSR
ANALOG INPUT
Input Ranges
Unipolar Mode 0 +10 0 +10 V
Bipolar Mode –5 +5 –5 +5 V Input Resistance 10 10 M Input Capacitance 10 10 pF Input Settling Time 1.5 1.5 µs Aperture Delay 10 10 ns Aperture Jitter 150 150 ps
INTERNAL VOLTAGE REFERENCE
Output Voltage
6
4.98 5.02 4.98 5.02 V
External Load
Unipolar Mode 1.5 1.5 mA
Bipolar Mode 0.5 0.5 mA
POWER SUPPLIES
Power Supply Rejection
= +12 V ± 5% 6 6 LSB
V
CC
V
= –12 V ± 5% 6 6 LSB
EE
V
= +5 V ± 10% 6 6 LSB
DD
Operating Current
I
CC
I
EE
I
DD
Power Consumption 560 745 560 745 m
NOTES
1
Adjustable to zero. See Figures 5 and 6.
2
% FSR = percent of full-scale range.
3
Includes internal voltage reference error.
4
Includes internal voltage reference drift.
5
Excludes internal voltage reference drift.
6
With maximum external load applied. Specifications shown in boldface are tested on all devices at final electrical test with worst case supply voltages at T calculate outgoing quality levels. All min and max specifications are guaranteed, although only those shown in boldface are tested.
Specifications subject to change without notice.
18 20 18 20 mA 25 34 25 34 mA 8 12 8 12 mA
, 25°C and T
MIN
. Results from those tests are used to
MAX
W
AD679
2
REV. D
–3–
AD679

TIMING SPECIFICATIONS

(All device types T 5%, VDD = +5 V  10%)
MIN
to T
, VCC = +12 V 5%, VEE = –12 V
MAX
Parameter Symbol Min Max Unit
SC Delay t Conversion Time t Conversion Rate
1
Convert Pulse Width t Aperture Delay t Status Delay t Access Time
Float Delay
2, 3
5
Output Delay t Format Setup t OE Delay t Read Pulse Width t Conversion Delay t EOCEN Delay t
NOTES
1
Includes acquisition time.
2
Measured from the falling edge of OE/EOCEN (0.8 V) to the time at which the data lines/EOC cross 2.0 V or 0.8 V. See Figure 4.
3
C
= 100 pF.
OUT
4
C
= 50 pF.
OUT
5
Measured from the rising edge of OE/EOCEN (2.0 V) to the time at which the output voltage changes by 0.5. See Figure 4; C = 10 pF.
Specifications subject to change without notice.
SC
C
t
CR
CP
AD
SD
t
BA
t
FD
OD
FS
OE
RP
CD
EO
50 ns
6.3 µs
7.8 µs
0.097 3.0 µs 520ns 0 400 ns 10 100 ns 10 57
4
ns
10 80 ns
0ns 100 ns 20 ns 195 ns 400 ns 50 ns
OUT
NOTES
1
IN ASYNCHRONOUS MODE, STATE OF CS DOES NOT AFFECT OPERATION.
SEE THE START CONVERSION TRUTH TABLE FOR DETAILS.
2
EOCEN = LOW (SEE FIGURE 3). IN SYNCHRONOUS MODE, EOC IS A THREE-
STATE OUTPUT. IN ASYNCHRONOUS MODE, EOC IS AN OPEN DRAIN OUTPUT.
3
DATA SHOULD NOT BE ENABLED DURING A CONVERSION.
Figure 1. Conversion Timing
Figure 2. Output Timing
–4–
NOTE
1
EOC IS A THREE-STATE OUTPUT IN SYNCHRONOUS MODE AND AN OPEN DRAIN OUTPUT IN ASYNCHRONOUS. ACCESS (t AND FLOAT (t ASYNCHRONOUS MODE WHERE THEY ARE A FUNCTION OF THE TIME CONSTANT FORMED BY THE 10pF OUTPUT CAPACITANCE AND THE PULL-UP RESISTOR.
) TIMING SPECIFICATIONS DO NOT APPLY IN
FD
)
BA
Figure 3. EOC Timing
TEST VCP C
ACCESS TIME HIGH Z TO LOGIC LOW 5V 100pF FLOAT TIME LOGIC HIGH TO HIGH Z 0V 10pF ACCESS TIME HIGH Z TO LOGIC HIGH 0V 100pF FLOAT TIME LOGIC LOW TO HIGH Z 5V 10pF
I
OL
D
OUT
C
OUT
I
OH
V
CP
OUT
Figure 4. Load Circuit for Bus Timing Specifications
REV. D
AD679

ABSOLUTE MAXIMUM RATINGS

1
With Respect
Specification To Min Max Unit
V
CC
V
EE
2
V
CC
V
DD
AGND –0.3 +18 V AGND –18 +0.3 V V
EE
–0.3 +26.4 V
DGND 0 +7 V AGND DGND –1 +1 V AIN, REF
IN
AGND V
EE
V
CC
V Digital Inputs DGND –0.5 +7 V Digital Outputs DGND –0.5 V
+ 0.3 V
DD
Max Junction
Temperature 175 °C

ORDERING GUIDE

Model Package Range Specified Option
With Respect
Specification To Min Max Unit
Operating Temperature
J and K Grades 0 70 °C A and B Grades –40 +85 °C
S and T Grades –55 +125 °C Storage Temperature –65 +150 °C Lead Temperature
(10 sec max) 300 °C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
2
The AD679 is not designed to operate from 15 V supplies.
1
Temperature Tested and Package
2
AD679JN 28-Pin Plastic DIP 0°C to +70°CAC N-28 AD679KN 28-Pin Plastic DIP 0°C to +70°C AC + DC N-28 AD679JD 28-Pin Ceramic DIP 0°C to +70°CAC D-28 AD679KD 28-Pin Ceramic DIP 0°C to +70°C AC + DC D-28 AD679AD 28-Pin Ceramic DIP –40°C to +85°CAC D-28 AD679BD 28-Pin Ceramic DIP –40°C to +85°C AC + DC D-28 AD679SD 28-Pin Ceramic DIP –55°C to +125°CAC D-28 AD679TD 28-Pin Ceramic DIP –55°C to +125°C AC + DC D-28 AD679AJ 44-Lead Ceramic JLCC –40°C to +85°CAC J-44 AD679BJ 44-Lead Ceramic JLCC –40°C to +85°C AC + DC J-44 AD679SD/883B
NOTES
1
For parallel read (14-bits) interface to 16-bit buses, see AD779.
2
N = Plastic DIP; D = Ceramic DIP; J = J-Leaded Ceramic Chip Carrier.
3
For details, grade, and package offerings screened in accordance with MIL-STD-883, refer to the Analog Devices Military Products Databook or the current AD679/883B data sheet.
3
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD679 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
REV. D
–5–
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