protection
Power-on refreshed to EEMEM settings in 300 µs typ
EEMEM rewrite time = 540 µs typ
Resistance tolerance stored in nonvolatile memory
12 extra bytes in EEMEM for user-defined information
2
C® compatible serial interface
I
Direct read/write accesses of RDAC
Predefined linear increment/decrement commands
Predefined ±6 dB step change commands
Synchronous or asynchronous quad channel update
Wiper setting readback
4 MHz bandwidth—1 kΩ version
Single supply 2.7 V to 5.5 V
Dual supply ±2.25 V to ±2.75 V
2 slave address decoding bits allow operation of 4 devices
100-year typical data retention, T
Operating temperature: –40°C to +85°C
APPLICATIONS
Mechanical potentiometer replacement
Low resolution DAC replacement
RGB LED backlight control
White LED brightness adjustment
RF base station power amp bias control
Programmable gain and offset control
Programmable attenuators
Programmable voltage-to-current conversion
Programmable power supply
Programmable filters
Sensor calibrations
GENERAL DESCRIPTION
The AD5253/AD5254 are quad channel, I2C, nonvolatile memory, digitally controlled potentiometers with 64/256 positions,
respectively. These devices perform the same electronic adjustment functions as mechanical potentiometers, trimmers, and
variable resistors.
The AD5253/AD5254’s versatile programmability allows multiple modes of operation, including read/write accesses in the
RDAC and EEMEM registers, increment/decrement of
resistance, resistance changes in ±6 dB scales, wiper setting
readback, and extra EEMEM for storing user-defined information, such as memory data for other components, look-up table,
or system identification information.
1
stores wiper settings with write
2
and EEMEM registers
= 55°C
A
Memory Digital Potentiometers
AD5253/AD5254
FUNCTIONAL BLOCK DIAGRAM
V
DD
V
SS
DGND
WP
SCL
SDA
AD0
AD1
SERIAL
INTERFACE
The AD5253/AD5254 allow the host I2C controllers to write any
of the 64-/256-step wiper settings in the RDAC registers and
store them in the EEMEM. Once the settings are stored, they are
restored automatically to the RDAC registers at system poweron; the settings can also be restored dynamically.
The AD5253/AD5254 provide additional increment, decrement,
+6 dB step change, and –6 dB step change in synchronous or
asynchronous channel update modes. The increment and
decrement functions allow stepwise linear adjustments, while
±6 dB step changes are equivalent to doubling or halving the
RDAC wiper setting. These functions are useful for steep-slope
nonlinear adjustment applications such as white LED brightness
and audio volume control.
The AD5253/AD5254 have a patented resistance tolerance
storing function that allows the user to access the EEMEM and
obtain the absolute end-to-end resistance values of the RDACs
for precision applications.
The AD5253/AD5254 are available in TSSOP-20 packages in
1 kΩ, 10 kΩ, 50 kΩ, and 100 kΩ options. All parts are
guaranteed to operate over the –40°C to +85°C extended
industrial temperature range.
1
The terms nonvolatile memory and EEMEM are used interchangeably.
2
The terms digital potentiometer and RDAC are used interchangeably.
RDAC EEMEM
EEMEM
POWER-ON
REFRESH
DATA
I2C
CONTROL
COMMAND
DECODE LOGIC
ADDRESS
DECODE LOGIC
CONTROL LOGIC
AD5253/AD5254
RAB TOL
Figure 1.
RDAC0
REGIS-
TER
RDAC1
REGIS-
TER
RDAC2
REGIS-
TER
RDAC3
REGIS-
TER
RDAC0
RDAC1
RDAC2
RDAC3
A0
W0
B0
A1
W1
B1
A2
W2
B2
A3
W3
B3
03824-0-001
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
Temperature Coefficient
Full-Scale Error V
Code = Full scale, AD5254 −3 −1 0 LSB
Zero-Scale Error V
Code = Zero scale, AD5254 0 1.2 3 LSB
RESISTOR TERMINALS
Voltage Range4 V
Capacitance5 Ax, Bx CA, C
Capacitance5 Wx C
Common-Mode Leakage
Current
DIGITAL INPUTS AND OUTPUTS
Input Logic High V
V
Input Logic Low V
V
Output Logic High (SDA) V
Output Logic Low (SDA) V
WP Leakage Current
A0 Leakage Current I
Input Leakage Current
(Other than
Input Capacitance5 C
POWER SUPPLIES
Single-Supply Power Range V
Dual-Supply Power Range VDD/V
Positive Supply Current I
2
R-DNL RWB, RWA = NC, AD5253 −0.75 ±0.1 +0.75 LSB
, RWA = NC, AD5254 −1 ±0.25 +1 LSB
WB
, RWA = NC, AD5254 −2.5 ±1 +2.5 LSB
WB
TA = 25°C −20 +20 %
IW = 1 V/R, VDD = 5 V 75 130 Ω
= 1 V/R, VDD = 3 V 200 300 Ω
W
R
= 10 kΩ, 50 kΩ 0.15 %
AB
= 100 kΩ 0.05 %
AB
Code = Full scale, AD5253 −1 −0.3 0 LSB
Code = Zero scale, AD5253 0 0.3 1 LSB
V
f = 1 kHz, measured to GND,
SS
85 pF
VDDV
(∆R
W
∆R
(∆V
WFSE
WZSE
A
AB
) × 106/∆T 650 ppm/°C
AB/RAB
/∆R
AB1
AB2
) × 106/∆T Code = Half scale 15 ppm/°C
W/VW
, VB, V
W
B
Code = Half scale
W
f = 1 kHz, measured to GND,
95 pF
Code = Half scale
6
ICMVA = VB = VDD/2 0.01 1 µA
VDD = 5 V, VSS = 0 V 2.4 V
= +2.7 V/0 V or VDD/VSS = ±2.5 V 2.1 V
DD/VSS
VDD = 5 V, VSS = 0 V 0.8 V
= +2.7 V/0 V or VDD/VSS = ±2.5 V 0.6 V
DD/VSS
R
= 2.2 kΩ to VDD = 5 V, VSS = 0 V 4.9 V
PULL-UP
R
= 2.2 kΩ to VDD = 5 V, VSS = 0 V 0.4 V
PULL-UP
WP = V
DD
5 µA
A0 = GND 3 µA
VIN = 0 V or V
DD
±1 µA
5 pF
VSS = 0 V 2.7 5.5 V
±2.25 ±2.75 V
VIH = VDD or VIL = GND 5 15 µA
WP and A0)
IH
IL
OH
OL
I
WP
A0
I
I
I
DD
SS
DD
Rev. 0 | Page 5 of 28
AD5253/AD5254
Parameter Symbol Conditions Min Typ1 Max Unit
POWER SUPPLIES (continued)
Negative Supply Current I
SS
VIH = VDD or VIL = GND, VDD = +2.5 V,
= −2.5 V
V
SS
EEMEM Data Storing Mode
Current
EEMEM Data Restoring
Mode Current
6
I
Power Dissipation7 P
I
DD_STORE
DD_RESTORE
DISS
VIH = VDD or VIL = GND, TA = 0°C to 85°C 35 mA
VIH = VDD or VIL = GND, TA = 0°C to 85°C 2.5 mA
VIH = VDD = 5 V or VIL = GND 0.075 mW
Power Supply Sensitivity PSS ∆VDD = 5 V ± 10% −0.005 +0.002 +0.005 %/%
∆VDD = 3 V ± 10% −0.01 +0.002 +0.01 %/%
DYNAMIC CHARACTERISTICS
5, 8
–3 dB Bandwidth BW RAB = 10 kΩ/50 kΩ/100 kΩ 400/80/40 kHz
Total Harmonic Distortion THDW VA = 1 Vrms, VB = 0 V, f = 1 kHz 0.05 %
VW Settling Time t
Resistor Noise Voltage e
S
N_WB
VA = VDD, VB = 0 V,
= 10 kΩ/50 kΩ/100 kΩ
R
AB
RAB = 10 kΩ/50 kΩ/100 kΩ, Code =
Midscale, f = 1 kHz. Thermal noise only.
Digital Crosstalk C
T
VA = VDD, VB = 0 V, Measure VW with
adjacent RDAC making full scale change
Analog Coupling C
AT
Signal input at A0 and measure
output at W1, f = 1 kHz
−5 −15 µA
1.5/7/14 µs
9/20/29
nV/√
Hz
−80 dB
−72 dB
Rev. 0 | Page 6 of 28
AD5253/AD5254
INTERFACE TIMING CHARACTERISTICS (ALL PARTS)
Guaranteed by design, not subject to production test. See Figure 23 for location of measured values. All input control voltages are specified
= tF = 2.5 ns (10% to 90% of 3 V) and timed from a voltage level of 1.5 V. Switching characteristics are measured using both
with t
R
= 3 V and 5 V. When the part is not in operation, the SDA and SCL pins should be pulled high. When these pins are pulled low, the
V
DD
2
C interface at these pins conducts current of about 0.8 mA at VDD = 5.5 V and 0.2 mA at VDD = 2.7 V.
I
Table 3.
Parameter Symbol Conditions Min Typ1 Max Unit
SCL Clock Frequency f
t
Bus Free Time between STOP and START t
BUF
t
Hold Time (Repeated START) t
HD;STA
t
Low Period of SCL Clock t
LOW
t
High Period of SCL Clock t
HIGH
t
Setup Time for START Condition t
SU;STA
t
Data Hold Time t
HD;DAT
t
Data Setup Time t
SU;DAT
tF Fall Time of Both SDA and SCL Signals t
tR Rise Time of Both SDA and SCL Signals t
t
Setup Time for STOP Condition t
SU;STO
EEMEM Data Storing Time t
EEMEM Data Restoring Time at Power On
EEMEM Data Restoring Time upon Restore
Command or RESET Operation
9
EEMEM Data Rewritable Time10 t
SCL
1
2
3
4
5
6
7
8
9
10
EEMEM_STORE
9
t
EEMEM_RESTORE1
t
EEMEM_RESTORE2VDD
EEMEM_REWRITE
FLASH/EE MEMORY RELIABILITY
Endurance
11
100 kCycles
Data Retention12 100 Years
400 kHz
1.3 µs
After this period, the first clock pulse is
0.6 µs
generated
1.3 µs
0.6 µs
0.6 µs
0 0.9 µs
100 ns
300 ns
300 ns
0.6 µs
26 ms
VDD rise time dependent. Measure without
decoupling capacitors at V
and VSS.
DD
300 µs
= 5 V 300 µs
540 µs
1
Typical values represent average readings at 25°C and VDD = 5 V.
2
Resistor position nonlinearity error (R-INL) is the deviation from an ideal value measured between the maximum resistance and the minimum resistance wiper
positions. R-DNL measures the relative step change from ideal between successive tap positions. Parts are guaranteed monotonic, except R-DNL of AD5254 1 kΩ
version at V
3
INL and DNL are measured at VW with the RDAC configured as a potentiometer divider similar to a voltage output D/A converter. VA = VDD and VB = 0 V. DNL
specification limits of ±1 LSB maximum are guaranteed monotonic operating conditions.
4
Resistor terminals A, B, and W have no limitations on polarity with respect to each other.
5
Guaranteed by design and not subject to production test.
6
cmd 0 NOP should be activated after cmd 1 in order to minimize I
7
P
is calculated from (IDD × VDD = 5 V).
DISS
8
All dynamic characteristics use VDD = 5 V.
9
During power-up, all outputs preset to midscale before restoring EEMEM contents. RDAC0 has the shortest whereas RDAC3 has the longest EEMEM restore time.
10
Delay time after power-on or RESET before new EEMEM data to be written.
11
Endurance is qualified to 100,000 cycles per JEDEC Std. 22 method A117, and is measured at –40°C, +25°C, and +85°C; typical endurance at +25°C is 700,000 cycles.
12
Retention lifetime equivalent at junction temperature (TJ) = 55°C per JEDEC Std. 22, Method A117. Retention lifetime based on an activation energy of 0.6eV derates
with junction temperature.
= 2.7V, IW = VDD/R for both VDD = 3 V or VDD = 5 V.
DD
current consumption.
DD_RESTORE
Rev. 0 | Page 7 of 28
AD5253/AD5254
ABSOLUTE MAXIMUM RATINGS
Table 4. TA = 25°C, unless otherwise noted
Parameter Rating
VDD to GND −0.3 V, +7 V
VSS to GND +0.3 V, −7 V
VDD to V
SS
VA, VB, VW to GND VSS, V
Maximum Current
IWB, IWA Pulsed ±20 mA
IWB Continuous (RWB ≤ 1 kΩ, A Open)
Digital Inputs and Output Voltage to GND 0 V, 7 V
Operating Temperature Range −40°C to +85°C
Maximum Junction Temperature (T
) 150°C
J MAX
Storage Temperature −65°C to +150°C
Lead Temperature (Soldering, 10 sec) 300°C
Vapor Phase (60 sec) 215°C
Infrared (15 sec) 220°C
TSSOP-20 Thermal Resistance2 θ
JA
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only;
functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
7 V
DD
±5 mA
143°C/W
1
Maximum terminal current is bounded by the maximum applied voltage across any two of the A, B, and W terminals at a given resistance, the maximum current
handling of the switches, and the maximum power dissipation of the package. V
2
Package power dissipation = (T
JMAX
− TA)/θJA.
= 5V.
DD
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. 0 | Page 8 of 28
AD5253/AD5254
A
PIN CONFIGURATION AND FUNCTIONAL DESCRIPTIONS
W0
1
2
B0
AD5253/
A0
3
AD5254
4
AD0
SD
V
WP
W1
B1
A1
SS
TOP VIEW
(Not to Scale)
5
1
2
3
4
5
Figure 2. AD5253/AD5254 Pin Configuration
Table 5. AD5253/AD5254 Pin Function Descriptions
Pin
No. Mnemonic Description
1 W0 Wiper Terminal of RDAC0. VSS ≤ VW0 ≤ VDD.
2 B0 B Terminal of RDAC0. VSS ≤ VB0 ≤ VDD.
3 A0 A Terminal of RDAC0. VSS ≤ VA0 ≤ VDD.
4 AD0 I2C Device Address 0. AD0 and AD1 allow four AD5253/AD5254s to be addressed.
5
WP
Write Protect, Active Low. VWP ≤ VDD + 0.3 V.
6 W1 Wiper Terminal of RDAC1. VSS ≤ VW1 ≤ VDD.
7 B1 B Terminal of RDAC1. VSS ≤ VB1 ≤ VDD.
8 A1 A Terminal of RDAC1. VSS ≤ VA1 ≤ VDD.
9 SDA
Serial Data Input/Output Pin. Shifts in one bit at a time on positive clock CLK edges. MSB loaded first. Open-drain
MOSFET requires pull-up resistor.
10 V
SS
Negative Supply. Connect to 0 V for single supply or –2.7 V for dual supply, where VDD – VSS ≤ +5.5 V. If VSS is used,
rather than grounded, in dual supply, V
must be able to sink 35 mA for 26 ms when storing data to EEMEM.
SS
11 A2 A Terminal of RDAC2. VSS ≤ VA2 ≤ VDD.
12 B2 B Terminal of RDAC2. VSS ≤ VB2 ≤ VDD.
13 W2 Wiper Terminal of RDAC2. VSS ≤ VW2 ≤ VDD.
14 SCL
Serial Input Register Clock Pin. Shifts in one bit at a time on positive clock edges. V
is recommended for SCL to ensure minimum power.
15 DGND Digital Ground. Connect to system analog ground at a single point.
16 AD1 I2C Device Address 1. AD0 and AD1 allow four AD5253/AD5254s to be addressed.
17 A3 A Terminal of RDAC3. VSS ≤ VA3 ≤ VDD.
18 B3 B Terminal of RDAC3. VSS ≤ VB3 ≤ VDD.
19 W3 W Terminal of RDAC3. VSS ≤ VW3 ≤ VDD.
20 V
DD
Positive Power Supply Pin. Connect +2.7 V to +5 V for single supply or ±2.7 V for dual supply, where VDD – VSS ≤ 5.5 V.
must be able to source 35 mA for 26 ms when storing data to EEMEM.
V
DD
V
10
DD
9
W3
8
B3
7
A3
6
AD1
DGND
10
9
SCL
8
W2
7
B2
6
A2
03842-0-002
≤ (VDD + 0.3 V). Pull-up resistor
SCL
Rev. 0 | Page 9 of 28
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