WTE SD840S-T3, SD850S-T3, SD820S-T3, SD830S-T3, SD860S-T3 Datasheet
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WTE |
SD820S – SD8100S |
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POWER SEMICONDUCTORS |
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8.0A DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Features |
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Schottky Barrier Chip |
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A |
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C |
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! Guard Ring Die Construction for |
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B |
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J |
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Transient Protection |
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D |
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High Current Capability |
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Low Power Loss, High Efficiency |
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! High Surge Current Capability |
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E |
PIN 1 |
2 |
3 |
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! For Use in Low Voltage, High Frequency |
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K |
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Inverters, Free Wheeling, and Polarity |
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G |
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Protection Applications |
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H |
L |
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P |
P |
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D PAK/TO-252AA |
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Mechanical Data |
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Dim |
Min |
Max |
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Case: Molded Plastic |
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! |
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A |
6.4 |
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6.8 |
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! Terminals: Plated Leads Solderable per |
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B |
5.0 |
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5.4 |
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MIL-STD-750, Method 2026 |
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C |
2.35 |
2.75 |
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Polarity: Cathode Band |
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PIN 3 - |
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+ Case PIN 2 |
D |
— |
1.60 |
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! Weight: 0.4 grams (approx.) |
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Single |
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E |
5.3 |
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5.7 |
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Mounting Position: Any |
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G |
2.3 |
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2.7 |
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Marking: Type Number |
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H |
0.4 |
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0.8 |
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Standard Packaging: 16mm Tape (EIA-481) |
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J |
0.4 |
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0.6 |
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K |
0.3 |
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0.7 |
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L |
0.50 Typical |
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P |
— |
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2.3 |
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All Dimensions in mm |
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Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified |
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Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. |
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Characteristic |
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Symbol |
SD |
SD |
SD |
SD |
SD |
SD |
SD |
Unit |
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820S |
830S |
840S |
850S |
860S |
880S |
8100S |
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Peak Repetitive Reverse Voltage |
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VRRM |
20 |
30 |
40 |
50 |
60 |
80 |
100 |
V |
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Working Peak Reverse Voltage |
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VRWM |
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DC Blocking Voltage |
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VR |
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RMS Reverse Voltage |
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VR(RMS) |
14 |
21 |
28 |
35 |
42 |
56 |
70 |
V |
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Average Rectified Output Current |
@TL = 85°C |
IO |
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8.0 |
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A |
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Non-Repetitive Peak Forward Surge Current 8.3ms |
IFSM |
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85 |
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A |
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Single half sine-wave superimposed on rated load |
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(JEDEC Method) |
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Forward Voltage (Note 1) |
@IF = 8.0A |
VFM |
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0.65 |
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0.75 |
0.85 |
V |
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Peak Reverse Current |
@TA = 25°C |
IRM |
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0.2 |
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mA |
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At Rated DC Blocking Voltage |
@TA = 100°C |
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20 |
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Typical Junction Capacitance (Note 2) |
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Cj |
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400 |
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pF |
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Typical Thermal Resistance Junction to Ambient |
R JA |
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60 |
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K/W |
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Operating Temperature Range |
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Tj |
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-50 to +125 |
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°C |
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Storage Temperature Range |
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TSTG |
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-50 to +150 |
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°C |
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Note: 1. Mounted on P.C. Board with 14mm2 (0.13mm thick) copper pad. |
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2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. |
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SD820S – SD8100S |
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1 of 3 |
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© 2002 Won-Top Electronics |
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