WTE SB8100D-T3, SB820D-T3, SB830D-T3, SB850D-T3, SB840D-T3 Datasheet

				WTE	SB820D – SB8100D
			POWER SEMICONDUCTORS
					8.0A D2PAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features

!Schottky Barrier Chip

!Guard Ring Die Construction for Transient Protection

!High Current Capability

!Low Power Loss, High Efficiency

!High Surge Current Capability

!For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications

Mechanical Data

!Case: Molded Plastic

!Terminals: Plated Leads Solderable per MIL-STD-202, Method 208

!Polarity: Cathode Band

!Weight: 1.7 grams (approx.)

!Mounting Position: Any

!Marking: Type Number

!Standard Packaging: 24mm Tape (EIA-481)

C

A

J

B

D

PIN 1

2

3

E

G

H

K

P

P

D2 PAK/TO-263

Dim

Min

Max

A

9.8

10.4

B

9.6

10.6

C

4.4

4.8

PIN 1 -

+

D

8.5

9.1

PIN 3 -

Case PIN 2

E

—

0.7

Potive CT

G

1.0

1.4

H

—

0.9

PIN 1 +

-

J

1.2

1.4

PIN 3 +

Case PIN 2

K

0.3

0.7

Negative CT

P

2.35

2.75

Suffix with “N”

All Dimensions in mm

Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.

Characteristic

Symbol

SB

SB

SB

SB

SB

SB

SB

Unit

820D

830D

840D

850D

860D

880D

8100D

Peak Repetitive Reverse Voltage

VRRM

Working Peak Reverse Voltage

VRWM

20

30

40

50

60

80

100

V

DC Blocking Voltage

VR

RMS Reverse Voltage

VR(RMS)

14

21

28

35

42

56

70

V

Average Rectified Output Current

@TC = 100°C

IO

8.0

A

Non-Repetitive Peak Forward Surge Current 8.3ms

Single half sine-wave superimposed on rated load

IFSM

150

A

(JEDEC Method)

Forward Voltage

@IF = 8.0A

VFM

0.55

0.75

0.85

V

Peak Reverse Current

@TA = 25°C

IRM

0.5

mA

At Rated DC Blocking Voltage

@TA = 100°C

50

Typical Junction Capacitance (Note 1)

Cj

400

pF

Typical Thermal Resistance Junction to Ambient

R JA

60

K/W

Operating and Storage Temperature Range

Tj, TSTG

-50 to +150

°C

Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

SB820D – SB8100D

1 of 3

© 2002 Won-Top Electronics