WTE SD103BWS-T1, SD103BWS-T3, SD103AWS-T1, SD103AWS-T3, SD103CWS-T1 Datasheet

				WTE	SD103AWS – SD103CWS
			POWER SEMICONDUCTORS		SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features

!Low Turn-on Voltage

!

Fast Switching

A

!

PN Junction Guard Ring for Transient and

SOD-323

ESD Protection

Dim

Min

Max

! Designed for Surface Mount Application

C

A

2.30

2.70

! Plastic Material – UL Recognition Flammability

D

Classification 94V-O

B

B

1.75

1.95

C

1.15

1.35

E

D

0.25

0.35

G

Mechanical Data

E

0.05

0.15

G

0.70

0.95

! Case: SOD-323, Molded Plastic

H

0.30

—

! Terminals: Plated Leads Solderable per

All Dimensions in mm

MIL-STD-202, Method 208

!Polarity: Cathode Band

!Weight: 0.004 grams (approx.)

! Marking: SD103AWS S6 H SD103BWS S7

SD103CWS S8

Maximum Ratings @TA=25°C unless otherwise specified

Characteristic		Symbol	SD103AWS	SD103BWS	SD103CWS	Unit
Peak Repetitive Reverse Voltage		VRRM
Working Peak Reverse Voltage		VRWM	40	30	20	V
DC Blocking Voltage		VR
Forward Continuous Current (Note 1)		IF		350		mA
Non-Repetitive Peak Forward Surge Current	@ t < 1.0s	IFSM		2.0		A
Power Dissipation (Note 1)		Pd		200		mW
Typical Thermal Resistance, Junction to Ambient Air (Note 1)		R JA		625		°C/W
Operating and Storage Temperature Range		Tj, TSTG		-55 to +125		°C
Electrical Characteristics @TA=25°C unless otherwise specified

Characteristic		Symbol	All Types	Unit	Test Condition
	SD103AWS		40
Reverse Breakdown Voltage	SD103BWS	V(BR)R	30	V	@ IR = 10µA, tp < 300µS
	SD103CWS		20
Forward Voltage Drop		VFM	0.37	V	@ IF = 20mA
			0.60		@ IF = 200mA
Peak Reverse Leakage Current		IRM	5.0	µA	@ Rated DC Blocking Voltage
Typical Junction Capacitance		Cj	50	pF	VR = 0V, f = 1.0MHz
Typical Reverse Recovery Time		trr	10	nS	IF = IR = 200mA
					IRR = 0.1 x IR, RL = 100
Note: 1. Valid provided that terminals are kept at ambient temperature.

SD103AWS – SD103CWS

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