WTE SB1030CT, SB1040CT, SB1020CT, SB10100CT, SB1080CT Datasheet

				WTE	SB1020CT – SB10100CT
			POWER SEMICONDUCTORS		10A SCHOTTKY BARRIER RECTIFIER
Features

!

Schottky Barrier Chip

B

! Guard Ring for Transient Protection

TO-220

!

High Current Capability, Low Forward

C

Dim

Min

Max

! Low Reverse Leakage Current

A

14.9

15.1

! High Surge Current Capability

G

A

B

—

10.5

! Plastic Material has UL Flammability

C

2.62

2.87

Classification 94V-O

PIN1 2

3

D

D

3.56

4.06

E

13.46

14.22

F

0.68

0.94

Mechanical Data

F

E

G

3.74 Ø

3.91 Ø

H

5.84

6.86

!

Case: TO-220 Molded Plastic

I

4.44

4.70

!

Terminals: Plated Leads Solderable per

P

J

2.54

2.79

MIL-STD-750, Method 2026

K

0.35

0.64

! Polarity: As Marked on Body

I

L

1.14

1.40

! Weight: 2.24 grams (approx.)

L

P

2.41

2.67

!

Mounting Position: Any

H

All Dimensions in mm

!

Marking: Type Number

PIN 1 -

+

J K

PIN 3 -

Case PIN 2

Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

SB

SB

SB

SB

SB

SB

SB

Unit

1020CT

1030CT

1040CT

1050CT

1060CT

1080CT

10100CT

Peak Repetitive Reverse Voltage

VRRM

20

30

40

50

60

80

100

V

Working Peak Reverse Voltage

VRWM

DC Blocking Voltage

VR

RMS Reverse Voltage

VR(RMS)

14

21

28

35

42

56

70

V

Average Rectified Output Current

@TC = 95°C

IO

10

A

Non-Repetitive Peak Forward Surge Current 8.3ms

Single half sine-wave superimposed on rated load

IFSM

150

A

(JEDEC Method)

Forward Voltage

@IF = 5.0A

VFM

0.55

0.75

0.85

V

Peak Reverse Current

@TA = 25°C

IRM

0.5

mA

At Rated DC Blocking Voltage

@TA = 100°C

50

Typical Junction Capacitance (Note 1)

Cj

700

pF

Operating and Storage Temperature Range

Tj, TSTG

-65 to +150

°C

Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

SB1020CT – SB10100CT

1 of 3

© 2002 Won-Top Electronics