Analog Input Range
– TLC5510...2 V Full Scale
– TLC5510A...4 V Full Scale
D
8-Bit Resolution
D
Integral Linearity Error
±0.75 LSB Max (25°C)
±1 LSB Max (–20°C to 75°C)
D
Differential Linearity Error
±0.5 LSB Max (25°C)
±0.75 LSB Max (–20°C to 75°C)
D
Maximum Conversion Rate
20 Mega-Samples per Second
(MSPS) Max
description
The TLC5510 and TLC5510A are CMOS, 8-bit, 20
MSPS analog-to-digital converters (ADCs) that
utilize a semiflash architecture. The TLC5510 and
TLC5510A operate with a single 5-V supply and
typically consume only 130 mW of power.
Included is an internal sample-and-hold circuit,
parallel outputs with high-impedance mode, and
internal reference resistors.
The semiflash architecture reduces power
consumption and die size compared to flash
converters. By implementing the conversion in a
2-step process, the number of comparators is
significantly reduced. The latency of the data
output valid is 2.5 clocks.
The TLC5510 uses the three internal reference
resistors to create a standard, 2-V, full-scale
conversion range using V
need for external reference resistors. The TLC5510A uses only the center internal resistor section with an
externally applied 4-V reference such that a 4-V input signal can be used. Differential linearity is 0.5 LSB at 25°C
and a maximum of 0.75 LSB over the full operating temperature range. Typical dynamic specifications include
a differential gain of 1% and differential phase of 0.7 degrees.
. Only external jumpers are required to implement this option and eliminates the
DDA
5-V Single-Supply Operation
D
Low Power Consumption
TLC5510 . . . 127.5 mW Typ
TLC5510A . . . 150 mW Typ
(includes reference resistor dissipation)
D
TLC5510 is Interchangeable With Sony
CXD1175
applications
D
Digital TV
D
Medical Imaging
D
Video Conferencing
D
High-Speed Data Conversion
D
QAM Demodulators
PW OR NS PACKAGE
(TOP VIEW)
OE
1
DGND
D1(LSB)
D8(MSB)
V
†
Available in tape and reel only and ordered
as the shown in the Available Options table
below.
D2
D3
D4
D5
D6
D7
DDD
CLK
2
3
4
5
6
7
8
9
10
11
12
DGND
24
REFB
23
REFBS
22
AGND
21
AGND
20
ANALOG IN
19
V
18
REFT
17
REFTS
16
V
15
V
14
V
13
†
DDA
DDA
DDA
DDD
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
The TLC5510 and TLC5510A are characterized for operation from –20°C to 75°C.
AVAILABLE OPTIONS
PACKAGE
T
A
°
–
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
AGND20, 21Analog ground
ANALOG IN19IAnalog input
CLK12IClock input
DGND2, 24Digital ground
D1–D83–10ODigital data out. D1 = LSB, D8 = MSB
OE1IOutput enable. When OE = low, data is enabled. When OE = high, D1–D8 is in high-impedance state.
V
DDA
V
DDD
REFB23IReference voltage in bottom
REFBS22Reference voltage in bottom. When using the TLC5510 internal voltage divider to generate a nominal 2-V
REFT17IReference voltage in top
REFTS16Reference voltage in top. When using the TLC5510 internal voltage divider to generate a nominal 2-V
14, 15, 18Analog supply voltage
11, 13Digital supply voltage
reference, REFBS is shorted to REFB (see Figure 3). When using the TLC5510A, REFBS is connected to
ground.
reference, REFTS is shorted to REFT (see Figure 3). When using the TLC5510A, REFTS is connected to
V
Supply voltage, V
Reference voltage input range, V
Analog input voltage range, V
Digital input voltage range, V
Digital output voltage range, V
Operating free-air temperature range, T
Storage temperature range, T
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
DDA
recommended operating conditions
MINNOMMAXUNIT
V
–AGND4.7555.25
DDA
Supply voltage
Reference input voltage (top), V
Reference input voltage (bottom), V
Analog input voltage range, V
High-level input voltage, V
Low-level input voltage, V
Pulse duration, clock high, t
Pulse duration, clock low, t
‡
The reference voltage levels for the TLC5510 are derived through an internal resistor divider between V
derived from a separate external voltage source (see the electrical characteristics and text). For the 4 V input range of the TLC5510A, the
reference voltage is externally applied across the center divider resistor.
IH
IL
w(H)
w(L)
‡
ref(T)
I(ANLG)
(see Figure 1)25ns
(see Figure 1)25ns
ref(B)
‡
V
–AGND4.7555.25
DDD
AGND–DGND–1000100mV
TLC5510AV
TLC5510A0V
+24V
REFB
REFT
V
REFB
4V
and ground and therefore are not
DDA
V
REFT
–4V
V
1V
DDA
DDA
DDD
DDD
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
3
TLC5510, TLC5510A
A
mA
A
I
Reference voltage current
Short REFB to REFBS
Short REFT to REFTS
TLC5510
(CLK)
,
Integral nonlinearity (INL)
TLC5510A
(CLK)
,
LSB
TLC5510
(CLK)
,
Differential nonlinearity (DNL)
TLC5510A
(CLK)
,
EZSZero-scale error
EFSFull-scale error
8-BIT HIGH-SPEED ANALOG-TO-DIGITAL CONVERTERS
SLAS095K – SEPTEMBER 1994 – REVISED MA Y 1999
electrical characteristics at VDD = 5 V , V
REFT
= 2.5 V , V
REFB
otherwise noted)
digital I/O
PARAMETERTEST CONDITIONS
I
IH
I
IL
I
OH
I
OL
I
OZH
I
OZL
†
Conditions marked MIN or MAX are as stated in recommended operating conditions.
power
I
DD
ref
†
Conditions marked MIN or MAX are as stated in recommended operating conditions.
static performance
R
ref
C
i
†
Conditions marked MIN or MAX are as stated in recommended operating conditions.
output leakage current
Low-level high-impedance-state
output leakage current
PARAMETERTEST CONDITIONS
Supply current
PARAMETERTEST CONDITIONS
Self-bias (1), at REFB
Self-bias (2), REFT – REFB
Self-bias (3), at REFTShort REFB to AGND,Short REFT to REFTS2.182.292.4
Reference voltage resistorBetween REFT and REFB190270350Ω
Analog input capacitanceV
OE = VDD,VDD = MAXVOH = V
OE = VDD,VDD = MINVOL = 016
f
= 20 MHz, National Television System Committee (NTSC)
(CLK)
ramp wave input, reference resistor dissipation is separate
TLC5510V
TLC5510AV
= 1.5 V + 0.07 V
I(ANLG)
f
= 20 MHz,
VI = 0.5 V to 2.5 V
f
= 20 MHz,
VI = 0 to 4 V
f
= 20 MHz,
VI = 0.5 V to 2.5 V
f
= 20 MHz,
VI = 0 to 4 V
TLC5510V
TLC5510A V
TLC5510V
TLC5510A V
= REFT – REFB = 2 V–18–43–68mV
ref
= REFT – REFB = 4 V–36–86 –136mV
ref
= REFT – REFB = 2 V–20020mV
ref
= REFT – REFB = 4 V–40040mV
ref
DD
= REFT – REFB = 2 V5.27.510.5mA
ref
= REFT – REFB = 4 V10.41521mA
ref
,
= 0.5 V , f
†
DD
†
†
rms
TA = 25°C±0.4 ±0.75
TA = –20°C to 75°C±1
TA = 25°C±0.4 ±0.75
TA = –20°C to 75°C±1
TA = 25°C±0.3±0.5
TA = –20°C to 75°C±0.75
TA = 25°C±0.3±0.5
TA = –20°C to 75°C±0.75
= 20 MHz, TA = 25°C (unless
(CLK)
MINTYPMAXUNIT
MINTYPMAXUNIT
1827mA
MINTYPMAXUNIT
0.570.610.65
1.92.022.15
16pF
16
5
µ
µ
V
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
f
Maximum conversion rate
f
1-kHz ramp
g()
Input tone
Input tone
Spurious free dynamic range (SFDR)
dB
Input tone
Input tone
SNR
Signal-to-noise ratio
dB
TLC5510, TLC5510A
8-BIT HIGH-SPEED ANALOG-TO-DIGITAL CONVERTERS
SLAS095K – SEPTEMBER 1994 – REVISED MA Y 1999
operating characteristics at VDD = 5 V , V
REFT
= 2.5 V , V
REFB
= 0.5 V , f
= 20 MHz, TA = 25°C (unless
(CLK)
otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
conv
BWAnalog input bandwidthAt – 1 dB14MHz
t
Digital output delay timeCL ≤ 10 pF (see Note 1 and Figure 1)1830ns
d(D)
Differential gain
Differential phase
t
Aperture jitter time30ps
AJ
t
Sampling delay time4ns
d(s)
t
Enable time, OE↓ to valid dataCL = 10 pF5ns
en
t
Disable time, OE↑ to high impedanceCL = 10 pF7ns
dis
p
NOTE 1: CL includes probe and jig capacitance.
TLC5510
TLC5510A
=
I
NTSC 40 Institute of Radio Engineers (IRE)
modulation wave,f
p
p
p
p
TA = 25°C46
Full range44
p
= 1 MHz
= 3 MHz
= 6 MHz
= 10 MHz
V
V
conv
TA = 25°C45
Full range43
TA = 25°C45
Full range46
TA = 25°C43
Full range42
TA = 25°C39
Full range39
= 0.5 V – 2.5 V20MSPS
I(ANLG)
= 0 V – 4 V20MSPS
I(ANLG)
1%
= 14.3 MSPS
0.7degrees
CLK (clock)
ANALOG IN
(input signal)
D1–D8
(output data)
t
w(H)
t
d(s)
t
w(L)
N
N–3N–2N–1NN+1
t
d(D)
N+1
N+2
N+3
N+4
Figure 1. I/O Timing Diagram
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
5
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