LM340-N/LM78XX Series 3-Terminal Positive Regulators
Check for Samples: LM340-N, LM78xx
1
FEATURES
2
•Complete Specifications at 1A Load
•Output Voltage Tolerances of ±2% at Tj= 25°C
and ±4% Over the Temperature Range
(LM340A)
•Line Regulation of 0.01% of V
1A Load (LM340A)
•Load Regulation of 0.3% of V
•Internal Thermal Overload Protection
•Internal Short-circuit Current Limit
•Output Transistor Safe Area Protection
•P+Product Enhancement Tested
/V of ΔVINat
OUT
/A (LM340A)
OUT
SNOSBT0J –FEBRUARY 2000–REVISED DECEMBER 2013
DESCRIPTION
The LM140/LM340A/LM340-N/LM78XXC monolithic
3-terminal positive voltage regulators employ internal
current-limiting, thermal shutdown and safe-area
compensation, making them essentially indestructible.
If adequate heat sinking is provided, they can deliver
over 1.0A output current. They are intended as fixed
voltage regulators in a wide range of applications
including local (on-card) regulation for elimination of
noise and distribution problems associated with
single-point regulation. In addition to use as fixed
voltage regulators, these devices can be used with
external components to obtain adjustable output
voltages and currents.
Considerable effort was expended to make the entire
series of regulators easy to use and minimize the
number of external components. It is not necessary to
bypass the output, although this does improve
transient response. Input bypassing is needed only if
the regulator is located far from the filter capacitor of
the power supply.
The 5V, 12V, and 15V regulator options are available
inthesteelTO-3powerpackage.The
LM340A/LM340-N/LM78XXC series is available in the
TO-220 plastic power package, and the LM340-N-5.0
is available in the SOT-223 package, as well as the
LM340-5.0 and LM340-12 in the surface-mount
DDPAK/TO-263 package.
Typical Applications
*Required if the regulator is located far from the power supply filter.
**Although no output capacitor is needed for stability, it does help
transient response. (If needed, use 0.1 μF, ceramic disc).
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
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Absolute Maximum Ratings
DC Input Voltage35V
Internal Power Dissipation
Maximum Junction Temperature150°C
Storage Temperature Range−65°C to +150°C
Lead Temperature (Soldering, 10 sec.)TO-3 Package (NDS)300°C
ESD Susceptibility
(1) Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Conditions are conditions under which
the device functions but the specifications might not be ensured. For ensured specifications and test conditions see the Electrical
Characteristics.
(2) Military datasheets are available upon request. At the time of printing, the military datasheet specifications for the LM140K-5.0/883,
LM140K-12/883, and LM140K-15/883 complied with the min and max limits for the respective versions of the LM140. The LM140H and
LM140K may also be procured as JAN devices on slash sheet JM38510/107.
(3) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
(4) The maximum allowable power dissipation at any ambient temperature is a function of the maximum junction temperature for operation
(T
= 125°C or 150°C), the junction-to-ambient thermal resistance (θJA), and the ambient temperature (TA). P
JMAX
TA)/θJA. If this dissipation is exceeded, the die temperature will rise above T
temperature rises above 150°C, the device will go into thermal shutdown. For the TO-3 package (NDS), the junction-to-ambient thermal
resistance (θJA) is 39°C/W. When using a heatsink, θJAis the sum of the 4°C/W junction-to-case thermal resistance (θJC) of the TO-3
package and the case-to-ambient thermal resistance of the heatsink. For the TO-220 package (NDE), θJAis 54°C/W and θJCis 4°C/W. If
SOT-223 is used, the junction-to-ambient thermal resistance is 174°C/W and can be reduced by a heatsink (see Applications Hints on
heatsinking).If the DDPAK\TO-263 package is used, the thermal resistance can be reduced by increasing the PC board copper area
thermally connected to the package: Using 0.5 square inches of copper area, θJAis 50°C/W; with 1 square inch of copper area, θJAis
37°C/W; and with 1.6 or more inches of copper area, θJAis 32°C/W.
(5) ESD rating is based on the human body model, 100 pF discharged through 1.5 kΩ.
(2) The maximum allowable power dissipation at any ambient temperature is a function of the maximum junction temperature for operation
(T
= 125°C or 150°C), the junction-to-ambient thermal resistance (θJA), and the ambient temperature (TA). P
JMAX
TA)/θJA. If this dissipation is exceeded, the die temperature will rise above T
temperature rises above 150°C, the device will go into thermal shutdown. For the TO-3 package (NDS), the junction-to-ambient thermal
and the electrical specifications do not apply. If the die
JMAX
DMAX
= (T
JMAX
−
resistance (θJA) is 39°C/W. When using a heatsink, θJAis the sum of the 4°C/W junction-to-case thermal resistance (θJC) of the TO-3
package and the case-to-ambient thermal resistance of the heatsink. For the TO-220 package (NDE), θJAis 54°C/W and θJCis 4°C/W. If
SOT-223 is used, the junction-to-ambient thermal resistance is 174°C/W and can be reduced by a heatsink (see Applications Hints on
heatsinking).If the DDPAK\TO-263 package is used, the thermal resistance can be reduced by increasing the PC board copper area
thermally connected to the package: Using 0.5 square inches of copper area, θJAis 50°C/W; with 1 square inch of copper area, θJAis
37°C/W; and with 1.6 or more inches of copper area, θJAis 32°C/W.
RippleTJ= 25°C, f = 120 Hz, IO=688061726070dB
Rejection1A
or f = 120 Hz, IO= 500 mA,686160dB
Over Temperature,
V
≤ VIN≤ V
MIN
R
DropoutTJ= 25°C, IO= 1A2.02.02.0V
O
Voltage
MAX
(8 ≤ VIN≤ 18)(15 ≤ VIN≤ 25)(18.5 ≤ VIN≤ 28.5)V
Outputf = 1 kHz81819mΩ
Resistance
Short-CircuitTJ= 25°C2.11.51.2A
Current
Peak OutputTJ= 25°C2.42.42.4A
Current
Average TCMin, TJ= 0°C, IO= 5 mA−0.6−1.5−1.8mV/°C
of V
O
V
Input Voltage TJ= 25°C
IN
Required to
Maintain Line
7.514.517.5V
Regulation
(1) All characteristics are measured with a 0.22 μF capacitor from input to ground and a 0.1 μF capacitor from output to ground. All
characteristics except noise voltage and ripple rejection ratio are measured using pulse techniques (tw≤ 10 ms, duty cycle ≤ 5%).
Output voltage changes due to changes in internal temperature must be taken into account separately.
Input Voltage (unless otherwise noted)10V19V23VUnits
ol
ParameterConditionsMinTypMaxMinTypMaxMinTypMax
V
Output Voltage TJ= 25°C, 5 mA ≤ IO≤ 1A4.855.211.51212.514.41515.6V
O
ΔVOLineIO= 500TJ= 25°C35041204150mV
RegulationmA
ΔVOLoadTJ=5 mA ≤ IO≤10501212012150mV
Regulation25°C1.5A
I
ΔI
QuiescentIO≤ 1ATJ= 25°C666mA
Q
Current
Quiescent5 mA ≤ IO≤ 1A0.50.50.5mA
Q
Current
Change
V
Output NoiseTA= 25°C, 10 Hz ≤ f ≤ 100407590μV
N
VoltagekHz
Ripplef = 120IO≤ 1A, TJ=688061726070dB
RejectionHz25°C or
R
DropoutTJ= 25°C, IO= 1A2.02.02.0V
O
Voltage
Outputf = 1 kHz81819mΩ
Resistance
Short-CircuitTJ= 25°C2.11.51.2A
Current
Peak OutputTJ= 25°C2.42.42.4A
Current
Average TC of 0°C ≤ TJ≤ +150°C, IO= 5−0.6−1.5−1.8mV/°C
V
OUT
Output Voltage5V12V15V
PD≤ 15W, 5 mA ≤ IO≤ 1A4.755.2511.412.614.2515.75V
V
MIN
≤ VIN≤ V
ΔV
MAX
IN
(8 ≤ VIN≤ 20)(15.5 ≤ VIN≤ 27)(18.5 ≤ VIN≤ 30)V
(7 ≤ VIN≤ 25)(14.5 ≤ VIN≤ 30)(17.5 ≤ VIN≤ 30)V
−55°C ≤ TJ≤50120150mV
+150°C
ΔV
IN
(8 ≤ VIN≤ 20)(15 ≤ VIN≤ 27)(18.5 ≤ VIN≤ 30)V
IO≤ 1ATJ= 25°C50120150mV
ΔV
IN
(7.5 ≤ VIN≤ 20)(14.6 ≤ VIN≤ 27)(17.7 ≤ VIN≤ 30)V
−55°C ≤ TJ≤256075mV
+150°C
ΔV
IN
(8 ≤ VIN≤ 12)(16 ≤ VIN≤ 22)(20 ≤ VIN≤ 26)V
250 mA ≤ IP≤256075mV
750 mA
−55°C ≤ TJ≤ +150°C,50120150mV
5 mA ≤ IO≤ 1A
−55°C ≤ TJ≤777mA
+150°C
TJ= 25°C, IO≤ 1A0.80.80.8mA
V
MIN
≤ VIN≤ V
MAX
(8 ≤ VIN≤ 20)(15 ≤ VIN≤ 27)(18.5 ≤ VIN≤ 30)V
IO= 500 mA, −55°C ≤ TJ≤0.80.80.8mA
+150°C
V
MIN
≤ VIN≤ V
MAX
(8 ≤ VIN≤ 25)(15 ≤ VIN≤ 30)(18.5 ≤ VIN≤ 30)V
IO≤ 500 mA,686160dB
V
MIN
−55°C ≤ T
≤+150°C
≤ VIN≤ V
MAX
J
(8 ≤ VIN≤ 18)(15 ≤ VIN≤ 25)(18.5 ≤ VIN≤ 28.5)V
mA
(1) All characteristics are measured with a 0.22 μF capacitor from input to ground and a 0.1 μF capacitor from output to ground. All
characteristics except noise voltage and ripple rejection ratio are measured using pulse techniques (tw≤ 10 ms, duty cycle ≤ 5%).
Output voltage changes due to changes in internal temperature must be taken into account separately.
Output VoltageTJ= 25°C, 5 mA ≤ IO≤ 1A4.855.211.51212.514.41515.6V
O
PD≤ 15W, 5 mA ≤ IO≤ 1A4.755.2511.412.614.2515.75V
V
≤ VIN≤ V
MIN
Line Regulation IO= 500TJ= 25°C35041204150mV
O
mA
ΔV
MAX
IN
(7.5 ≤ VIN≤ 20)(14.5 ≤ VIN≤ 27)(17.5 ≤ VIN≤ 30)V
(7 ≤ VIN≤ 25)(14.5 ≤ VIN≤ 30)(17.5 ≤ VIN≤ 30)V
0°C ≤ TJ≤50120150mV
+125°C
ΔV
IN
(8 ≤ VIN≤ 20)(15 ≤ VIN≤ 27)(18.5 ≤ VIN≤ 30)V
IO≤ 1ATJ= 25°C50120150mV
ΔV
IN
(7.5 ≤ VIN≤ 20)(14.6 ≤ VIN≤ 27)(17.7 ≤ VIN≤ 30)V
0°C ≤ TJ≤256075mV
+125°C
ΔV
IN
Load Regulation TJ=5 mA ≤ IO≤10501212012150mV
O
25°C1.5A
(8 ≤ VIN≤ 12)(16 ≤ VIN≤ 22)(20 ≤ VIN≤ 26)V
250 mA ≤ IO≤256075mV
750 mA
5 mA ≤ IO≤ 1A, 0°C ≤ T
≤ +125°C
J
50120150mV
QuiescentIO≤ 1ATJ= 25°C888mA
Current
0°C ≤ TJ≤8.58.58.5mA
+125°C
Quiescent5 mA ≤ IO≤ 1A0.50.50.5mA
Q
Current Change
TJ= 25°C, IO≤ 1A1.01.01.0mA
V
MIN
≤ VIN≤ V
MAX
(7.5 ≤ VIN≤ 20)(14.8 ≤ VIN≤ 27)(17.9 ≤ VIN≤ 30)V
IO≤ 500 mA, 0°C ≤ TJ≤1.01.01.0mA
+125°C
V
≤ VIN≤ V
MIN
Output NoiseTA= 25°C, 10 Hz ≤ f ≤407590μV
N
Voltage100 kHz
MAX
(7 ≤ VIN≤ 25)(14.5 ≤ VIN≤ 30)(17.5 ≤ VIN≤ 30)V
Ripple RejectionIO≤ 1A, TJ=628055725470dB
25°C
f = 120
Hz
V
MIN
≤ VIN≤ V
or IO≤ 500625554dB
mA,
0°C ≤ T
+125°C
MAX
≤
J
(8 ≤ VIN≤ 18)(15 ≤ VIN≤ 25)(18.5 ≤ VIN≤ 28.5)V
characteristics except noise voltage and ripple rejection ratio are measured using pulse techniques (tw≤ 10 ms, duty cycle ≤ 5%).
Output voltage changes due to changes in internal temperature must be taken into account separately.
Product Folder Links: LM340-N LM78xx
LM340-N, LM78xx
www.ti.com
LM340-N Electrical Characteristics
(1)
(continued)
SNOSBT0J –FEBRUARY 2000–REVISED DECEMBER 2013
0°C ≤ TJ≤ +125°C unless otherwise specified
Output Voltage5V12V15V
SymbolInput Voltage (unless otherwise noted)10V19V23VUnits
ParameterConditionsMinTypMaxMinTypMaxMinTypMax
R
Dropout Voltage TJ= 25°C, IO= 1A2.02.02.0V
O
Outputf = 1 kHz81819mΩ
Resistance
Short-CircuitTJ= 25°C2.11.51.2A
Current
Peak OutputTJ= 25°C2.42.42.4A
Current
Average TC of0°C ≤ TJ≤ +125°C, IO= 5−0.6−1.5−1.8mV/°C
V
Output VoltageTJ= 25°C7.78.08.3V
Line RegulationTJ= 25°C10.5V ≤ VI≤ 25V6.0160mV
O
Load RegulationTJ= 25°C5.0 mA ≤ IO≤ 1.5A12160mV
O
Output Voltage11.5V ≤ VI≤ 23V, 5.0 mA ≤ IO≤ 1.0A, P ≤ 15W7.68.4V
Quiescent CurrentTJ= 25°C4.38.0mA
QuiescentWith Line11.5V ≤ VI≤ 25V1.0mA
Current ChangeWith Load5.0 mA ≤ IO≤ 1.0A0.5
V
N
NoiseTA= 25°C, 10 Hz ≤ f ≤ 100 kHz52μV
ΔVI/ΔVORipple Rejectionf = 120 Hz, IO= 350 mA, TJ= 25°C5672dB
V
DO
R
O
I
OS
I
PK
Dropout VoltageIO= 1.0A, TJ= 25°C2.0V
Output Resistancef = 1.0 kHz16mΩ
Output Short Circuit CurrentTJ= 25°C, VI= 35V0.45A
Peak Output CurrentTJ= 25°C2.2A
ΔVO/ΔTAverage Temperature Coefficient of IO= 5.0 mA
Output Voltage
(1)
LM7808CUnits
MinTypMax
11.0V ≤ VI≤ 17V2.080
250 mA ≤ IO≤ 750 mA4.080
0.8mV/°C
(1) All characteristics are measured with a 0.22 μF capacitor from input to ground and a 0.1 μF capacitor from output to ground. All
characteristics except noise voltage and ripple rejection ratio are measured using pulse techniques (tw≤ 10 ms, duty cycle ≤ 5%).
Output voltage changes due to changes in internal temperature must be taken into account separately.