STGB20NB37LZ
N-CHANNEL CLAMPED 20A D2PAK
INTERNALLYCLAMPED PowerMESH
TYPE V
ST G B20NB37LZ C LA MP ED < 2.0 V 20 A
■ POLYSILICONGATEVOLTAGE DRIVEN
■ LOW THRESHOLDVOLTAGE
■ LOW ON-VOLTAGEDROP
■ HIGHCURRENT CAPABILITY
■ HIGHVOLTAGECLAMPINGFEATURE
■ SURFACE-MOUNTINGD
CES
POWERPACKAGE IN TUBE (NO SUFFIX)
OR IN TAPE & REEL (SUFFIX ”T4”)
DESCRIPTION
Using the latest high voltage technology based
on patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs with
outstandingperformances.
The built in collector-gate zener exhibits a very
precise active clamping while the gate-emitter
zenersuppliesan ESD protection.
APPLICATIONS
■ AUTOMOTIVEIGNITION
V
CE(sat)
2
PAK(TO-263)
I
C
IGBT
PRELIMINARY DATA
3
1
D2PAK
TO-263
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Value Unit
V
V
V
I
CM
E
P
E
T
(•) Pulsewidth limited by safeoperating area
February 2000
Collector-Emitter Voltage (VGS=0) CLAMPED V
CES
Reverse Battery Protection 20 V
ECR
Gate-Emitter Voltage CLAMPED V
GE
I
Coll ect or Current (continuous) at Tc=25oC40A
C
I
Coll ect or Current (continuous) at Tc=100oC30A
C
(•) Coll ect or Current (pu ls ed) 80 A
Single Pulse E n ergy Tc = 25oC 700 mJ
AS
Tot al Diss ipa t ion at Tc=25oC 150 W
tot
Derating Facto r 1 W/
ESD (H uman Body Mo del) 4 KV
SD
St orage T emperature -65 to 175
stg
Max. Operating Junct ion T emperature 175
T
j
o
C
o
C
o
C
1/6
STGB20NB37LZ
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambie nt Max
Ther mal Resistanc e Case-sink Ty p
1
62.5
0.2
o
C/W
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
=25oC unless otherwise specified)
(T
j
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
BV
(CES)
(ECR)
Clamped Volt a ge IC=2mA VGE=0 TC=-40oC
I
=2mA VGE=0 TC=25oC
C
=2mA VGE=0 TC=150oC
I
C
Emitter C ollector
IC=75mA TC=25oC20 28 V
380
375
370
405
400
395
430
425
420
Break -down V oltage
BV
GE
Gate Emitter
IG=± 2mA 121416V
Break -down V oltage
I
CES
I
GES
Collect o r cut-off
Current (VG E = 0)
Gat e- Em i t t er Leak age
VCE=15V VGE=0 TC=150oC
= 200 V VGE=0 TC= 150oC
V
CE
VGE= ± 10 V VCE=0 ±300 ± 660 ± 1000 µA
10
100
Current (VCE = 0)
R
Gate Emitter Resistance 10 15 30 K
GE
ON(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GE(th)
V
CE(SAT)
Gate Threshold
Voltage
Collector-Emitter
Sat urat ion Voltage
VCE=VGEIC= 250µATC=-40oC
V
CE=VGEIC
V
CE=VGEIC
= 250 µ ATC=25oC
= 250µATC=150oC
VGE=4.5V IC=10A TC=25oC
=4.5V IC=10A TC=150oC
V
GE
=4.5V IC=20A TC=25oC
V
GE
=4.5V IC=20A TC=150oC
V
GE
1.2
1.0
0.6
1.4 2
1.1
1.0
1.35
1.25
1.8
1.7
2.0
2.0
V
V
V
µ
µA
V
V
V
V
V
V
V
A
Ω
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
C
C
C
Q
2/6
Forward
fs
VCE=25V IC=20A 35 S
Tr ansc on duc tance
Input Capaci t anc e
ies
Out put Capac it ance
oes
Reverse Tr ansfer
res
VCE=25V f=1MHz VGE= 0 2300
165
28
Capacit a nc e
Gat e Ch ar ge VCE= 280 V IC=20A VGE=5V 51 nC
G
pF
pF
pF
STGB20NB37LZ
FUNCTIONALCHARACTERISTICS
Symbol Parameter Test Conditions Min. Typ. Max. Unit
II Lat c hing C urrent V
R
U.I.S. Functional Te s t
Open Sec ondary Coil
R
R
SWITCHINGON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
(di/dt)
Delay T im e
t
Rise Tim e
r
Tur n-on Current Slope VCC=250V IC=20A
on
VCC= 250 V IC=20A
V
R
E
Turn-on
on
Switching Losses
VCC=250V IC=20A TC=25oC
R
SWITCHINGOFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
tr(v
td(
E
off
t
tr(v
td(
E
off
(•) Pulse width limited by safe operatingarea (*) Pulsed: Pulse duration = 300 ms, duty cycle 1.5 % (**)LossesInclude Also TheTail(jedec Standardization)
Cross-Over T ime
c
Off Voltage Rise Time
)
off
Fall Time
t
f
Off Volt age Delay T im e
)
off
(**)
Turn-off Switching Loss
Cross-Over T ime
c
Off Voltage Rise Time
)
off
Fall Time
t
f
Off Volt age Delay T im e
)
off
(**)
Turn-off Switching Loss
V
R
V
R
T
= 250 V VGE=4.5V
CLAM P
=1K
Ω
Ω
Ω
V
GE
L=3mH T
=4.5V TC=150oC
GOFF
=1 KΩ L=3mH TC=25oC
GOFF
=1 K
GOFF
=4.5V RG=1KΩ
GE
=1KΩ VGE=4.5V
G
=1 K
G
=250V IC=20A
CC
=1KΩ VGE=4.5V
GE
=250V IC=20A
CC
=1KΩ VGE=4.5V
GE
= 150oC
C
T
= 150oC
C
= 150oC
C
80 A
21.6
15
26
18
2.3
0.6
550 A/ µ s
8.8
9.2
4.8
2.6
2.0
11.5
11.8
7.8
3.5
3.9
12.0
17.8
A
A
µ
µs
mJ
mJ
µ
µs
µs
µs
mJ
µ
µs
µ
µs
mJ
s
s
s
s
3/6
STGB20NB37LZ
Fig. 1:
Fig. 3:
UnclampedInductive Load Test Circuit
SwitchingTimes Test Circuits For
ResistiveLoad
Fig. 2:
Fig. 4:
UnclampedInductiveWaveform
GateCharge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
AndDIode RecoveryTimes
4/6
TO-263 (D2PAK) MECHANICAL DATA
STGB20NB37LZ
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067
C 0.45 0.6 0.017 0.023
C2 1.21 1.36 0.047 0.053
D 8.95 9.35 0.352 0.368
E 10 10.4 0.393 0.409
G 4.88 5.28 0.192 0.208
L 15 15.85 0.590 0.624
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068
mm inch
D
A
C2
DETAIL”A”
C
A2
DETAIL”A”
A1
B2
E
L2
L
L3
B
G
P011P6/E
5/6
STGB20NB37LZ
Information furnishedis believedtobe accurateand reliable.However, STMicroelectronics assumes no responsibilityfor the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specificationmentioned in this publication are
subjectto change without notice.This publication supersedes and replaces all information previously supplied.STMicroelectronics products
are not authorized for use as critical components in life support devices or systemswithout express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
1999STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan- Malaysia - Malta - Morocco -
6/6
Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
.
Loading...