Siemens MCT5210, MCT5211 Datasheet

MCT5210
MCT5211

AlGaAs LED/ Phototransistor

Optocoupler

FEATURES

• Current T ransfer Ratio
MCT5210, >70% at I

=3.0 mA

F

MCT5211, >110% at IF=1.0 mA

• Saturation CTR–MCT5211, >100% at IF=1.6 mA

• High Isolation Voltage, 5300 VAC

RMS

• Underwriters Lab File #E52744

• VDE #0884 Available with Option 1

DESCRIPTION

The MCT5210/5211 are optocouplers with a high effi­ciency AlGaAs LED optically coupled to a NPN pho­totransistor. The high performance LED makes
operation at low input currents practical. The coupler
is housed in a double molded, six pin DIP package.
Isolation test voltage is 5300 VA C

RMS

.

Because these parts have guaranteed CTRs at one
and three mA, they are ideally suitable for interfacing
from CMOS to TTL or LSTTL to TTL. They are also
ideal for telecommunications applications such as
ring or off-hook detection.

Maximum Ratings
Emitter

Peak Reverse Voltage ............................................6 V

Continuous Forward Current .............................40 mA

Power Dissipation at 25
Derate Linearly from 25

°

C.................................75 mW

°

C .......................... 1.0 mW/°C

Detector

Collector-Emitter Breakdown Voltage....................30 V

Emitter-Collector Breakdown Voltage......................7 V

Collector-Base Breakdown Voltage.......................70 V

Power Dissipation............................................200 mW

Derate Linearly from 25

°

C .......................... 2.6 mW/°C

Packa ge

Isolation Test Voltage..............................5300 VAC

RMS

Total Package Dissipation

at 25

°

C Ambient (LED + Detector)..............260 mW

Derate Linearly from 25

°

C .......................... 3.5 mW/°C

Leakage Path............................................. 7 mm min.

Clearance Path............................................ 7 mm min.

Comparative Tracking Index per

DIN IEC 112/VDE 0303, part 1 ........................... 175

Isolation Resistance

V

=500 V, TA=25°C ....................................≥1012

IO

VIO=500 V, TA=100°C ..................................≥1011

Operating Temperature.....................–55°C to +100°C

Storage Temperature.........................–55

°

C to +150°C

Dimensions in inches (mm)

pin one ID

3

.248 (6.30)
.256 (6.50)

4

.335 (8.50)
.343 (8.70)

.039

(1.00)

min.

4°

typ.

.018 (0.45)
.022 (0.55)

Electrical Characteristics

Parameter Symbol Min. Typ. Max. Unit Condition

Emitter
Forward Voltage V
Reverse Voltage V

Detector

Package

Saturated Current Transfer Ratio VCE=0.4 V
MCT5210

MCT5211
MCT5211

Current Transfer Ratio V
MCT5210

MCT5211
MCT5211

Ω

Collector-Base Current Transfer Ratio V

Ω

MCT5210
MCT5211
MCT5211

Saturation Voltage
MCT5210 V

MCT5211 V

(0–70°C)

12

5

.048 (1.22)
.052 (1.32)

6

Anode

Cathode

.130 (3.30)
.138 (3.50)

.031 (.080) min.

.031 (.80)
.035 (.90)

.100 (2.54) typ.

NC

3°–9°

1

2

3

.300 (7.62)

typ.

.010 (.25)

.300–.347

(7.62–8.81)

(25°C)

F
R

HFE 100 200 VCE=5 V

BV

CEO

BV

ECO

BV

CBO

I

CEO

CTR

CEsat

CTR

CEsat

CTR

CEsat

CTR
CTR
CTR

CTR

CB

CTR

CB

CTR

CB

CEsat

CEsat

1.2 1.5 V IF=5 mA

6VI

30 V IC=100 µA
7VI
70 V IE=10 µA

5 100 nA VCE=10 V

60

120

100

200

75

150

70

150

150

300

110

225

0.2

0.4

0.3

0.6

0.25

0.5

0.25 0.4 V IF=3.0 mA

0.25 0.4 V IF=1.6 mA

%
%
%

%
%
%

%
%
%

6

Base

5

Collector

4

Emitter

18°

typ.

.114 (2.90)
.130 (3.30)

=10 µA

R

I

=100 µA

C

=100 µA

E

IF=3.0 mA
I

=1.6 mA

F

I

=1.0 mA

F

=5.0 V

CE

=3.0 mA

I

F

I

=1.6 mA

F

I

=1.0 mA

F

=4.3 V

CE

IF=3.0 mA
I

=1.6 mA

F

I

=1.0 mA

F

I

=1.8 mA

C

IC=1.6 mA

1

Characteristics —

FORWARD VOLTAGE

SCU

continued

Parameter Symbol Min. Typ. Max. Unit Condition

°

Switching Characteristics (25

C)

Propagation Delay —High to Low
MCT5210

MCT5211
MCT5211

tPHL
tPHL
tPHL

10
20
40

s

µ

s

µ

s

R
R
R

=330

L

=750

L

=1.5

L

µ

Propagation Delay —Low to High

µ

MCT5210
MCT5211
MCT5211

tPLH
tPLH
tPLH

10
20
40

s

µ

s

µ

s

R
R
R

=330

L

=750

L

=1.5

L

IF=3.0 mA, VCC=5.0 V

Ω,
Ω,

IF=1.6 mA, VCC=5.0 V

Ω,

IF=1.0 mA, VCC=5.0 V

Ω,

IF=3.0 mA, VCC=5.0 V
IF=1.6 mA, VCC=5.0 V

Ω,

Ω,

IF=1.0 mA, VCC=5.0 V

Figure 1. Forward current vs. forward
voltage

35
30

25
20

15
10

5

IF - LED Current - mA

0

Ta = 25°C

VF - LED Forward Voltage - V

Figure 2. LED forward current vs.
forward voltage

100

Ta = 25°C

10

1

IF - LED CURRENT - mA

.1

VF - LED FORWARD VOLTAGE - V

Figure 4. Collector base photocurrent
vs. LED current

300

250

200

150

100

50

Icb - PHOTOCURRENT - µA

1.41.31.21.11.0

1.41.31.21.11.0

0

Figure 5. Photocurrent vs. LED current

1000

100

10

1

Icb - PHOTOCURRENT - µA

.1

Ta = 25°C

IF - LED CURRENT - mA

Ta = 25°C

IF - LED CURRENT - mA

Figure 7. Collector base current transfer
ratio vs. LED current

1.0

0.8

0.6

0.4

0.2

4035302520151050

0.0

CTRcb - COLLECTOR BASE - CTR - %

IF - LED CURRENT - mA

TA = 25°C

Figure 8. Collector base current transfer
ratio vs. LED current

1.0

0.8

0.6

0.4

0.2

100101.1

0.0

CTRcb - COLLECTOR BASE - CTR - %

IF - LED CURRENT - mA

TA = 25°C

35302520151050

100101.1

Figure 3. Switching waveform

I

F

t

D

t

PHL

t

R

t

PLH

V

t

S

V

O

TH

=1.5 V

t

F

Figure 6. Switching schematic

V

= 5 V

CC

INPUT

R

L

2

V

OUT

Figure 9. Current transfer ratio
ratio vs. LED current

700

600

500

400

RATIO - %

300

200

100

IF - LED CURRENT - mA

MCT5210/5211

Ta = 25°C

Vce

10 V

5 V
2 V

1V

0.4 V

100101.1