Richtek RT8231AGQW, RT8231BGQW Schematic [ru]

RT8231A/B

Complete DDR Memory Power Supply Controller

General Description

The RT8231A/B provides a complete power supply for

DDR2/DDR3/DDR3L/LPDDR3/DDR4 memory systems. It

integrates a synchronous PWM Buck controller with a

1.5A sink/source tracking linear regulator and buffered low

noise reference.

The PWM controller provides the low quiescent current,

high efficiency, excellent transient response, and high DC

output accuracy needed for stepping down high-voltage

batteries to generate low-voltage chipset RAM supplies

in notebook computers. The constant on-time PWM

control scheme handles wide input/output voltage ratios

with ease and provides 100ns “instant-on” response to

load transients while maintaining a relatively constant

switching frequency.

The RT8231A/B achieves high efficiency at a reduced cost

by eliminating the current-sense resistor found in

traditional current mode PWMs. Efficiency is further

enhanced by its ability to drive very large synchronous

rectifier MOSFETs. The Buck conversion allows this device

to directly step down high-voltage batteries for the highest

possible efficiency.

The 1.5A sink/source LDO maintains fast transient

response only requiring a 10μF ceramic output capacitor.

In addition, the LDO supply input is available externally

to significantly reduce the total power losses. The

RT8231A/B supports all of the sleep state controls placing

VTT at high-Z in S3 and discharging VDDQ, VTT and

VTTREF (soft-off) in S4/S5.

The RT8231A/B provides protections including OVP, UVP,

and thermal shutdown. The RT8231A/B is available in the

WQFN-20L 3x3 package.

Applications

 DDR2/DDR3/DDR3L/LPDDR3/DDR4 Memory Power

Supplies

 Notebook computers

 SSTL18, SSTL15 and HSTL bus termination

Pin Configurations

(TOP VIEW)

BOOT

VLDOIN

PHASE

17181920

LGATE

PGND

9876

TON UGATE

VDD

115

VID

PGOOD

VTTGND

VTTSNS

GND

VTTREF

VDDQ

VTT

GND

WQFN-20L 3x3

Simplified Application Circuit

VDD

PGOODPGOOD

VTT

VTTSNS

S3 S5 VID

RT8231A/B

GND

DS8231A/B-05 March 2015 www.richtek.com

TON

UGATE

BOOT

PHASE

LGATE

VTTREF

VDDQ

VLDOIN

RT8231A/B

Features



 PWM Controller





 Adjustable Current Limit with Low-Side R



Sensing



 Low Quiescent Supply Current



 Quick Load-Step Response within 100ns



 1% V



 Adjustable 0.675V to 3.3V Output Range for 1.8V



(DDR2), 1.5V (DDR3), 1.35V (DDR3L), 1.2V (LPDDR3) and 1.2V (DDR4)



 4.5V to 26V Battery Input Range



 Resistor Adjustable Frequency



 Over-/Under-Voltage Protection



 Internal Voltage Ramp Soft-Start



 Drives Large Synchronous Re ctifier MOSFETs



 Power Good Indicator





 1.5A LDO (VTT), Buffered Reference (VTTREF)





 Capable to Sink and Source Up to 1.5A



 LDO Input Available to Optimize Power Losses



 Requires Only 10



 Integrated Divider Tracks 1/2 VDDQ for both VTT



and VTTREF



 Accuracy



 Supports High-Z in S3 and Soft-Off in S4/S5





 RoHS Compliant and Halogen Free



Accuracy Over Line and Load

VDDQ

μμ

μF Ceramic Output Capacitor

μμ

±±

±20mV for both VTTREF and VTT

±±

DS(ON)

Ordering Information

RT8231A/B

Package Type QW : WQFN-20L 3x3 (W-Type)

Lead Plating System G : Green (Halogen Free and Pb Free)

VDDQ and VTT Discharge Control A : Tracing Mode B : Non-Tracking Mode

Note :

Richtek products are :

 RoHS compliant and compatible with the current require-

ments of IPC/JEDEC J-STD-020.

 Suitable for use in SnPb or Pb-free soldering processes.

Marking Information

RT8231AGQW

24= : Product Code

24=YM

DNN

RT8231BGQW

3T=YM

DNN

YMDNN : Date Code

3T= : Product Code

YMDNN : Date Code

DS8231A/B-05 March 2015www.richtek.com

Functional Pin Description

Pin No. Pin Name Pin Function

1 VTTGND Power Grou nd for the VTT LDO.

RT8231A/B

2 VTTSNS

3, 21

(Exposed Pad)

4 VTTREF VTTREF Buffered Reference Output.

5 VDDQ Reference Input for VTT and VTTREF.

6 FB

7 S3 VTT LDO Enable Control Input. Do not leave this pin floating.

8 S5 PWM Enable Co ntrol In put. Do n ot leave thi s pin floati ng.

9 TON Set the UGATE On-Time Through a Pul l-Up Resistor Connectin g to VIN.

10 PGOOD

11 VID Internal Reference Voltage Setting.

12 VDD Su pply Voltage Input for the Analog Supply and LGATE Gate Driver.

13 CS

14 PGND Power Ground for Low-Side MOSFET.

15 LGATE Low-Sid e Gate Driver Output for VDDQ.

GND

Voltage Sense Input for the VTT LDO. Connect to the terminal of the VTT_LDO output capacitor.

The exposed pad must be soldered to a large PCB and connected to GND for maximum power dissipation.

Feedback Voltage Inpu t. Conn ect to a resistive v oltage divi der fr om VDDQ to GND to adjust the output voltage .

Power Good Open-Drain Output. In high state when VDDQ output voltage i s within the target range.

Current Limit Threshold Setting Input. Conn ect to GND th rou gh the voltag e setting resistor.

16 PHASE

17 UGAT E High-Side Gate Driver Output for VDDQ.

18 BOOT Bootstrap Sup ply for High-Sid e Gate Driver.

19 VLDOIN Power Supply for VTT LDO.

20 VTT Power Output for the VTT LDO.

Swit ch Node. External i nductor conne ction f or VDDQ an d behave as the curre nt sen se comparat or in put for Low-Side MOSFET R

DS(ON)

sen sing.

DS8231A/B-05 March 2015 www.richtek.com

RT8231A/B

Function Block Diagram

Buck Controller

TRIG

REF

On-Time

1-SHOT

SS Timer

85% V

VDDQ

TON

115%V

0.45V

SS Int

REF

Comp

+ +

Latch

S1 Q

Latch

S1 Q

REF

Thermal

Shutdown

Reference

Voltage

Selector

BOOT

Min. T

OFF

TRIG

DEM

1/10

REF

5µA

UGATE

PHASE

VDD

LGATE

PGND

VTT LDO

GND

VTTSNS

VDD

Non-Tracking

Discharge

VID

VDDQ

Thermal

Shutdown

PGOOD

VTTREF

VLDOIN

VTT

VTTGND

DS8231A/B-05 March 2015www.richtek.com

Operation

RT8231A/B

The RT8231A/B is a constant on-time synchronous step-

down controller. In normal operation, the high-side

N-MOSFET is turned on when the output voltage is lower

than VREF, and is turned off after the internal one-shot

timer expires. While the high-side N-MOSFET is turned

off, the low-side N-MOSFET is turned on to conduct the

inductor current until next cycle begins.

Soft-Start (SS)

For internal soft-start function, an internal current source

charges an internal capacitor to build the soft-start ramp

voltage. The output voltage will track the internal ramp

voltage during soft-start interval.

PGOOD

The power good output is an open-drain architecture. When

the soft-start is finished, the PGOOD open-drain output

will be high impedance.

Current Limit

The current limit circuit employs a unique “valley” current

sensing algorithm. If the magnitude of the current sense

signal at PHASE is above the current limit threshold, the

PWM is not allowed to initiate a new cycle. The current

limit threshold can be set with an external voltage setting

resistor on the CS pin.

Over-Voltage Protection (OVP) & Under-Voltage Protection (UVP)

The output voltage is continuously monitored for over-

voltage and under-voltage protection. When the output

voltage exceeds its set voltage threshold( 115% of V

UGATE goes low and LGATE is forced high. When the

feedback voltage is less than 0.45V, under-voltage

protection is triggered and then both UGATE and LGATE

gate drivers are forced low. The controller is latched until

VDD is re-supplied and exceeds the POR rising threshold

voltage or S5 is reset.

VTT Linear Regulator and VTTREF

This VTT linear regulator employs ultimate fast response

feedback loop so that small ceramic capacitors are enough

for keeping track of VTTREF within 40mV at all conditions,

including fast load transient. The VTTREF block consists

of on-chip 1/2 divider, LPF and buffer. This regulator also

has sink and source capability up to 10mA. Bypass

VTTREF to GND with a 33nF ceramic capacitor for stable

operation.

OUT

DS8231A/B-05 March 2015 www.richtek.com

RT8231A/B

Absolute Maximum Ratings (Note 1)

 Supply Input Voltage, TON to GND ------------------------------------------------------------------------------------ −0.3V to 32V

 BOOT to PHASE ---------------------------------------------------------------------------------------------------------- −0.3V to 6V

 PHASE to GND

DC----------------------------------------------------------------------------------------------------------------------------- −0.3V to 32V

< 20ns ----------------------------------------------------------------------------------------------------------------------- −8V to 38V

 LGATE to GND

DC----------------------------------------------------------------------------------------------------------------------------- −0.3V to 6V

< 20ns ----------------------------------------------------------------------------------------------------------------------- −2.5V to 7.5V

 UGATE to PHASE

DC----------------------------------------------------------------------------------------------------------------------------- −0.3V to 6V

< 20ns ----------------------------------------------------------------------------------------------------------------------- −5V to 7.5V

 VDD, CS, S3, S5, VTTSNS, VDDQ, VID, VTTREF, VTT, VLDOIN, FB, PGOOD to GND ---------------- −0.3V to 6V

 PGND, VTTGND to GND ------------------------------------------------------------------------------------------------- −0.3V to 0.3V

 Other Pins------------------------------------------------------------------------------------------------------------------- −0.3V to 6.5V

 Power Dissipation, P

WQFN-20L 3x3 ------------------------------------------------------------------------------------------------------------ 3.33W

 Package Thermal Resistance (Note 2)

WQFN-20L 3x3, θJA------------------------------------------------------------------------------------------------------- 30°C/W

WQFN-20L 3x3, θJC------------------------------------------------------------------------------------------------------ 7.5°C/W

 Junction Temperature ----------------------------------------------------------------------------------------------------- 150°C

 Lead Temperature (Soldering, 10 sec.)------------------------------------------------------------------------------- 260°C

 Storage Temperature Range -------------------------------------------------------------------------------------------- −65°C to 150°C

 ESD Susceptibility (Note 3)

HBM (Human Body Model)---------------------------------------------------------------------------------------------- 2kV

@ T

= 25°C

Recommended Operating Conditions (Note 4)

 Input Voltage, VIN --------------------------------------------------------------------------------------------------------- 4.5V to 26V

 Control Voltage, VDD ----------------------------------------------------------------------------------------------------- 4.5V to 5.5V

 Junction Temperature Range -------------------------------------------------------------------------------------------- −40°C to 125°C

 Ambient Temperature Range -------------------------------------------------------------------------------------------- −40°C to 85°C

Electrical Characteristics

(VDD = 5V, V

PWM Controller

Quiescent S upp ly Current

TON Operati ng Current R

VLDOIN

= 12V, R

= 620kΩ, TA = 25°C, unless otherwise specified)

TON

Parameter Symbol Test Conditions Min Typ Max Unit

FB Forced above the Regulation Point, V

= 5V, VS3 = 0V, Not Switching

= 620k, VIN = 12V -- 19 -- A

TON

-- 135 -- A

BIAS Current VS5 = VS3 = 5V, VTT = No Load -- 1 -- A

Standby Current VS5 = 5V, VS3 = 0, VTT = No Load -- 0.1 10 A

DS8231A/B-05 March 2015www.richtek.com

RT8231A/B

Parameter Symbol Test Conditions Min Typ Max Unit

VDD -- 0.1 10 A TON -- 0.1 5 A

Shutdown Current

= VS3 = 0V)

FB Error Comparator Threshold

VDDQ Voltage Rang e 0.675 -- 3.3 V

Switch Frequency fSW

Minimum Off-Time 250 400 550 ns

VDDQ Shutdown Discharge Resistance

Current Sensing

CS Pin Source Current 4.5 5 5.5 A Zero Cros sing Threshol d GND  PHASE 5 -- 10 mV

SHDN

S5/S3 1 0.1 1 A VLDOIN -- 0.1 1 A VID -- 0.5 1 A

REF

= 0.675V/ 0.75V 1 0 1 %

REF

= 620k, VIN = 12V,

TON

= 1 .5V, I

DDQ

= 0V, VS3 = 0V -- 15 -- 

= 20A (Note 5)

OUT

320 4 00 480 kHz

Fault Protection

Current Limit (Positive) GND  PHASE, RCS = 160k 70 80 90 mV

Output UV Threshold V

UVP

low.

0.4 0.45 0.5 V

Falling. For both VID is high or

UVP Latch Delay FB Forced below UV Threshol d -- 30 -- s

OVP Threshold V

OVP

With Respect to Error Compar ator Threshold

110 115 120 %

OVP Latch Delay FB Forced above OV Threshold -- 5 -- s

VDD POR Threshold

Rising Edge, Hysteresis = 120mV, PWM Disabled be low this Level

3.9 4.2 4.5 V

Voltage Ramp Soft-Start Time From S5 Going High to VFB = 0.675V -- 1 -- mS

UV Blank Time From S5 Si gnal Going Hi gh -- 5 -- mS

Thermal Shutdown TSD -- 165 -- C

Driver On-Resistance

UGATE Gate Driver Source R

UGATE Gate Driver Sink R

LGATE Gate Driver So urce R

LGATE Gate Driver Si nk R

UGATEsr

UGATEsk

LGATEsr

LGATEsk

BOOT PHASE Forced to 5V -- 2.5 5 

BOOT  PHASE Forced to 5V -- 1.5 3 

DL, High State -- 2.5 5 

DL, Low State -- 0.8 1.6 

LGATE Rising (Phase = 1.5V) -- 40 --

Dead Time

UGATE Rising -- 40 --

Internal Boost Charging Switch On-Resistance

VDD to BOOT, 10mA -- -- 80 

DS8231A/B-05 March 2015 www.richtek.com

RT8231A/B

Parameter Symbol Test Conditions Min Typ Max Unit

Logic I/O

S3, S5 Input Voltage

Logic-High 2 -- --

Logic-Low -- -- 0.8

Logic Input Current S3, S5 = VDD / GND 1 0 1 A

VID Input Threshold Voltage

Logic-High 750 -- --

Logic-Low -- -- 300

PGOOD (Upper Side Threshold Decide by OV Threshold)

Trip Threshold (Falling)

Fault Propagation Delay

Output Low Voltage I

Leakage Current I

High State, F orced to 5V -- -- 1 A

LEA K

Measured at FB, with Respect to Reference, No Load. Hysteresis = 2%

Falling Edge, FB Forced be low PGOOD Trip Threshold

= 1mA -- -- 0.4 V

SINK

20 15 10 %

-- 5 -- s

VTT LDO

VTT Output Tol eran ce V

VTT Source Current Limit I

VTT Sink Current Limit I

VTT Leakage Current I

VTTSNS Leakage Current I

DDQ

1.8V, |I

DDQ

1.8V, |I

VTTTOL

VTTOCLSRC

VTTOCLSNK

VTTLK

VTTSNSLK

DDQ

| < 1.2A

VTT

DDQ

| < 1.5A

VTT

VTT = 0V 1.6 2.6 3.6 A

VTT = V

S5 = 5V, S3 = 0V,

= 1mA 1 -- 1 A

SINK

= V

VTT

= V

VTT

= V

DDQ

= 1.2V/1.35V/1.5V/

LDOIN

| = 0A

= 1.2V/1.35V/1.5V/

LDOIN

| < 1A

= 1.2V/1.35V,

LDOIN

= 1.5V/1.8V,

LDOIN

20 -- 20

30 -- 30

40 -- 40

1.6 2.6 3.6 A



VTT =

VDDQ

 

10 -- 10 A

VTT Discharge Current I

VTTREF Output Voltage V

VDDQ/2, VTTREF Output Voltage Tolerance

VTTREF Source Current Limit I

DSC HRG

VTTREF

VTTREFTOL

VTTREFOCL

DDQ

VTT

VDDQ

LDOIN

VTTREF

LDOIN

VTTREF

= 0V, VTT = 0.5V, S5 = S3 = 0V 10 30 -- mA



V =

VTTREF

VDDQ

 

-- 0.75 -- V

= 1.5V

= V

| < 10mA

= V

| < 10mA

VDDQ

= 1.5V,

= 1.8V,

15 -- 15

18 -- 18

= 0V 10 40 80 mA

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