Philips irf630a DATASHEETS

Advanced Power MOSFET

IRF630A

FEATURES

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low R

: 0.333 Ω (Typ.)

DS(ON)

Absolute Maximum Ratings

Characteristic Value UnitsSymbol

Drain-to-Source Voltage Continuous Drain Current (T Continuous Drain Current (T

o

=25 )

C

=100 )

C

o

C Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (T

=25 )

C

o

C Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds

T

V

DSS

I

D

I

DM

V

GS

E

AS

I

AR

E

AR

dv/dt

P

, T

J

T

D

STG

L

O O

O O O

BV R I

DSS

DS(on)

= 9 A

D

= 200 V

= 0.4 Ω

TO-220

1

2

3

1.Gate 2. Drain 3. Source

200

9

5.7

+

_

162

36

30

9

7.2

5.0

1

2

1 1

3

72

0.57

- 55 to +150

300

V A A

V

mJ

A

mJ

V/ns

W

W/

o

C

Thermal Resistance

R

JC

θ

R

θ

CS

R

JA

θ

Characteristic Max. UnitsSymbol Typ.

Junction-to-Case

Case-to-Sink

Junction-to-Ambient

--

0.5

--

1.74

--

62.5

o

C

/W

Rev. B

IRF630A

Electrical Characteristics (T

o

=25 unless otherwise specified)

C

N-CHANNEL

POWER MOSFET

BV

BV/ T

∆ ∆

V

R

DSS

GS(th)

I

GSS

I

DSS

DS(on)

g

fs

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q

gs

Q

gd

CharacteristicSymbol

Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff.

J

Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse

Drain-to-Source Leakage Current

Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge

g

Gate-Source Charge Gate-Drain( “Miller” ) Charge

200

--

2.0

--

Max. UnitsTyp.Min. Test Condition

V

--

0.21

--

3.87 500

95 45 13 13 30 18 22

4.3

10.9

--

4.0

100

-100 10

100

0.4

-650 110

55 40 40 70 50 29

--

V/

V

nA

A

µ

Ω Ω

pF

ns

nC

o

=0V,ID=250 A

GS

µ

I

=250 A See Fig 7

C

D

V

=5V,ID=250 A

DS

V

=30V

GS

V

=-30V

GS

V

=200V

DS

V

=160V,TC=125

DS

=10V,ID=4.5A

V

GS

=40V,ID=4.5A

V

DS

=0V,VDS=25V,f =1MHz

V

GS

See Fig 5

V

=100V,ID=9A,

DD

=12

R

Ω

G

See Fig 13

V

=160V,VGS=10V,

DS

I

=9A

D

See Fig 6 & Fig 12

µ

o

C

4

O

4

O

5

O4O

5

O4O

Source-Drain Diode Ratings and Characteristics

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

I

SM

V

t

Q

Notes ;

Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature

1

O

2

L=3mH, I

O

3

I

O

Pulse Test : Pulse Width = 250 s, Duty Cycle 2%

4

O

Essentially Independent of Operating Temperature

5

O

Continuous Source Current

S

Pulsed-Source Current Diode Forward Voltage

SD

Reverse Recovery Time

rr

Reverse Recovery Charge

rr

=9A, VDD=50V, RG=27 , Starting TJ =25

AS

_

<

9A, di/dt 220A/ s, VDDBV

SD

<

µ

--

1

O

4

O

Ω

_

<

, Starting TJ =25

DSS

µ

_

<

--

-137

--

0.68

--

o

C

o

C

36

1.5

--

µ

A V

ns

C

9

--

Integral reverse pn-diode in the MOSFET

o

T

=25 ,IS=9A,VGS=0V

C

J

o

C

T

=25 ,IF=9A

J

/dt=100A/ s

di

F

µ

O

4

N-CHANNEL

POWER MOSFET

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

V

GS

Top : 1 5 V 1 0 V

8.0 V

1

10

7.0 V

6.0 V

5.5 V

5.0 V Bottom : 4.5 V

0

10

, Drain Current [A]

D

I

-1

10

-1

10

0

10

VDS , Drain-Source Voltage [V]

@ Notes :

1. 250

2. T

s Pulse Test

µ

= 25 oC

C

IRF630A

1

10

o

150

0

10

, Drain Current [A]

D

I

-1

1

10

2 4 6 8 10

C

25 oC

o

- 55

C

VGS , Gate-Source Voltage [V]

@ Notes :

1. V

2. V

3. 250

= 0 V

GS

= 40 V

DS

s Pulse Test

µ

1.00

VGS = 10 V

]

Ω

, [

DS(on)

R

0.75

0.50

0.25

Drain-Source On-Resistance

0.00 0 5 10 15 20 25 30 35

ID , Drain Current [A]

800

C

iss

600

400

C

oss

Capacitance [pF]

C

200

rss

C

= Cgs+ Cgd ( Cds= shorted )

iss

C

= Cds+ C

oss

gd

C

= C

rss

gd

VGS = 20 V

@ Note : TJ = 25 oC

@ Notes :

= 0 V

1. V

GS

2. f = 1 MHz

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current

1

10

0

10

, Reverse Drain Current [A]

150 oC

DR

I

-1

10

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

25 oC

@ Notes :

1. VGS = 0 V

2. 250

s Pulse Test

µ

VSD , Source-Drain Voltage [V]

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage

V

= 40 V

10

5

DS

V

= 100 V

DS

VDS = 160 V

, Gate-Source Voltage [V]

GS

0

10

1

10

VDS , Drain-Source Voltage [V]

V

0

0 5 10 15 20 25

QG , Total Gate Charge [nC]

@ Notes : ID = 9.0 A