Philips IRF530N Datasheet

Philips Semiconductors	Product specification
N-channel TrenchMOS™ transistor	IRF530N

FEATURES		SYMBOL			QUICK REFERENCE DATA
• 'Trench' technology			d		VDSS = 100 V
• Low on-state resistance
• Fast switching					ID = 17 A
• Low thermal resistance
			g		RDS(ON) ≤ 110 mΩ
			s
GENERAL DESCRIPTION	PINNING				SOT78 (TO220AB)

N-channel enhancement mode		PIN			DESCRIPTION
field-effect power transistor in a
plastic envelope using 'trench'	1			gate
technology.	2				drain
Applications:-
• d.c. to d.c. converters	3			source
• switched mode power supplies		tab			drain
The IRF530N is supplied in the
SOT78 (TO220AB) conventional
leaded package.

tab drain

1	2	3
gate		source

drain

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VDSS	Drain-source voltage	Tj = 25 ˚C to 175˚C	-	100	V
VDGR	Drain-gate voltage	Tj = 25 ˚C to 175˚C; RGS = 20 kΩ	-	100	V
VGS	Gate-source voltage		-	± 20	V
ID	Continuous drain current	Tmb = 25 ˚C; VGS = 10 V	-	17	A
		Tmb = 100 ˚C; VGS = 10 V	-	12	A
IDM	Pulsed drain current	Tmb = 25 ˚C	-	68	A
PD	Total power dissipation	Tmb = 25 ˚C	-	79	W
Tj, Tstg	Operating junction and		- 55	175	˚C
	storage temperature

AVALANCHE ENERGY LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
EAS	Non-repetitive avalanche	Unclamped inductive load, IAS = 7.8 A;	-	150	mJ
	energy	tp = 300 μs; Tj prior to avalanche = 25˚C;
		VDD ≤ 25 V; RGS = 50 Ω; VGS = 10 V; refer
IAS	Peak non-repetitive	to fig:14	-	17	A
	avalanche current

August 1999

1

Rev 1.100

Philips Semiconductors	Product specification
N-channel TrenchMOS™ transistor	IRF530N

THERMAL RESISTANCES

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
Rth j-mb	Thermal resistance junction		-	-	1.9	K/W
	to mounting base
Rth j-a	Thermal resistance junction	SOT78 package, in free air	-	60	-	K/W
	to ambient

ELECTRICAL CHARACTERISTICS

Tj= 25˚C	unless otherwise specified
SYMBOL		PARAMETER	CONDITIONS		MIN.	TYP.	MAX.	UNIT
V(BR)DSS		Drain-source breakdown	VGS = 0 V; ID = 0.25 mA;		100	-	-	V
		voltage	Tj = -55˚C		89	-	-	V
VGS(TO)		Gate threshold voltage	VDS = VGS; ID = 1 mA		2	3	4	V
			Tj	= 175˚C	1	-	-	V
			Tj = -55˚C		-		6	V
RDS(ON)		Drain-source on-state	VGS = 10 V; ID = 9 A		-	80	110	mΩ
gfs		resistance	Tj	= 175˚C	-	-	275	mΩ
		Forward transconductance	VDS = 25 V; ID = 9 A		6.4	11	-	S
IGSS		Gate source leakage current	VGS = ± 20 V; VDS = 0 V		-	10	100	nA
IDSS		Zero gate voltage drain	VDS = 100 V; VGS = 0 V		-	0.05	10	μA
		current	VDS = 80 V; VGS = 0 V; Tj = 175˚C		-	-	250	μA
Qg(tot)		Total gate charge	ID = 9 A; VDD = 80 V; VGS = 10 V		-	-	40	nC
Qgs		Gate-source charge			-	-	5.6	nC
Qgd		Gate-drain (Miller) charge			-	-	19	nC
td on		Turn-on delay time	VDD = 50 V; RD = 2.7 Ω;		-	6	-	ns
tr		Turn-on rise time	VGS = 10 V; RG = 5.6 Ω		-	36	-	ns
td off		Turn-off delay time	Resistive load		-	18	-	ns
tf		Turn-off fall time			-	12	-	ns
Ld		Internal drain inductance	Measured tab to centre of die		-	3.5	-	nH
Ld		Internal drain inductance	Measured from drain lead to centre of die		-	4.5	-	nH
			(SOT78 package only)
Ls		Internal source inductance	Measured from source lead to source		-	7.5	-	nH
			bond pad
Ciss		Input capacitance	VGS = 0 V; VDS = 25 V; f = 1 MHz		-	633	-	pF
Coss		Output capacitance			-	103	-	pF
Crss		Feedback capacitance			-	61	-	pF

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Tj = 25˚C unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS		MIN.	TYP.	MAX.	UNIT
IS	Continuous source current			-	-	17	A
	(body diode)
ISM	Pulsed source current (body			-	-	68	A
	diode)
VSD	Diode forward voltage	IF = 17	A; VGS = 0 V	-	0.92	1.2	V
trr	Reverse recovery time	IF = 17	A; -dIF/dt = 100 A/μs;	-	55	-	ns
Qrr	Reverse recovery charge	VGS = 0 V; VR = 25 V		-	135	-	nC

August 1999

2

Rev 1.100

Philips Semiconductors	Product specification
N-channel TrenchMOS™ transistor	IRF530N

Normalised Power Derating, PD (%)

100

90

80

70

60

50

40

30

20

10

0

0	25	50	75	100	125	150	175
		Mounting Base temperature, Tmb (C)

	Fig.1.	Normalised power dissipation.
	PD% = 100×PD/PD 25 ˚C = f(Tmb)
Normalised Current Derating, ID (%)
100
90
80
70
60
50
40
30
20
10
0
0	25	50	75	100	125	150	175
		Mounting Base temperature, Tmb (C)
Fig.2. Normalised continuous drain current.
ID% = 100×ID/ID 25 ˚C = f(Tmb); conditions: VGS ³ 10 V

	100	Peak Pulsed Drain Current, IDM (A)
		RDS(on) = VDS/ ID
		tp = 10 us
	10
		100 us
		D.C.
		1 ms
	1	10 ms
		100 ms
	0.1

1	10	100	1000
	Drain-Source Voltage, VDS (V)
Fig.3.	Safe operating area. Tmb = 25 ˚C

ID & IDM = f(VDS); IDM single pulse; parameter tp

10	Transient thermal impedance, Zth j-mb (K/W)
1	D = 0.5
	0.2
	0.1
0.1	0.05	P		D = tp/T
			tp
	0.02	D

single pulse

									T
0.01
	1E-06		1E-05	1E-04		1E-03	1E-02		1E-01	1E+00
					Pulse width, tp (s)
		Fig.4. Transient thermal impedance.
			Zth j-mb = f(t); parameter D = tp/T
20	Drain Current, ID (A)
					VGS = 10V
18									8 V
	Tj = 25 C
16										6 V
14
12
10										5.4 V
8
										5.2 V
6
										5 V
4
										4.8 V
2									4.6 V
										4.4 V
0
	0	0.2	0.4	0.6	0.8	1	1.2	1.4	1.6	1.8	2
				Drain-Source Voltage, VDS (V)
Fig.5. Typical output characteristics, Tj = 25 ˚C.
					ID = f(VDS)

0.2	Drain-Source On Resistance, RDS(on) (Ohms)
		4.8V		5.2 V						Tj = 25 C
0.18	4.6V
			5 V
						5.4 V
0.16
0.14									6V
0.12
0.1
0.08										8 V
0.06									VGS = 10V
0.04
0.02
0
	0	2	4	6	8	10	12	14	16	18	20
				Drain Current, ID (A)
Fig.6.			Typical on-state resistance, Tj = 25 ˚C.
					RDS(ON) = f(ID)

August 1999

3

Rev 1.100