Philips ES1B, ES1D, ES1C, ES1A Datasheet
DISCRETE SEMICONDUCTORS
SMA ES1 series
Ultra fast low-loss
controlled avalanche rectifiers
Product specification
2000 Jan 19
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
FEATURES
• Glass passivated
• High maximum operating
temperature
• Ideal for surface mount automotive
applications
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• UL 94V-O classified plastic
package
• Shipped in 12 mm embossed tape
• Marking: cathode, date code,
type code
• Easy pick and place.
DESCRIPTION
DO-214AC surface mountable
package with glass passivated chip.
SMA ES1 series
The well-defined void-free case is of a
transfer-moulded thermo-setting
plastic. The small rectangular
package has two J bent leads.
Fig.1 Simplified outline (DO-214AC) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
ES1A − 50 V
ES1B − 100 V
ES1C − 150 V
ES1D − 200 V
V
R
continuous reverse voltage
ES1A − 50 V
ES1B − 100 V
ES1C − 150 V
ES1D − 200 V
V
RMS
root mean square voltage
ES1A − 35 V
ES1B − 70 V
ES1C − 105 V
ES1D − 140 V
I
F(AV)
average forward current averaged over any 20 ms period;
− 1.0 A
Ttp= 120 °C; see Fig.2
I
FSM
non-repetitive peak forward current t = 8.3 ms half sine wave;
− 25 A
Tj= 25 °C prior to surge;
VR= V
RRMmax
T
stg
T
j
storage temperature −65 +175 °C
junction temperature
See Fig.3
−65 +175 °C
2000 Jan 19 2
Philips Semiconductors Product specification
Ultra fast low-loss
SMA ES1 series
controlled avalanche rectifiers
ELECTRICAL CHARACTERISTICS
Tj= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
t
rr
C
d
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
R
th j-a
forward voltage IF= 1 A; see Fig.4 − − 1.10 V
reverse current VR= V
VR= V
; see Fig.5 − − 5 µA
RRMmax
; Tj= 165 °C; see
RRMmax
− − 100 µA
Fig.5
reverse recovery time when switched from IF= 0.5 A to
− − 25
ns
IR= 1 A; measured at IR= 0.25 A;
see Fig.9
diode capacitance VR= 4 V; f = 1 MHz; see Fig.6 − 19 −
pF
thermal resistance from junction to tie-point; see Fig.7 27 K/W
thermal resistance from junction to ambient note 1 100 K/W
note 2 150 K/W
Notes
1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm.
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm.
For more information please refer to the ‘General Part of associated Handbook’.
2000 Jan 19 3
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