Philips ES1 Datasheet

DATA SH EET

Product specification 2000 Feb 14

DISCRETE SEMICONDUCTORS

ES1 series

SMA ultra fast low-loss
controlled avalanche rectifiers

ook, halfpage

M3D168

2000 Feb 14 2

Philips Semiconductors Product specification

SMA ultra fast low-loss
controlled avalanche rectifiers

ES1 series

FEATURES

• Glass passivated

• High maximum operating temperature

• Ideal for surface mount automotive applications

• Low leakage current

• Excellent stability

• Guaranteed avalanche energy absorption capability

• UL 94V-O classified plastic package

• Shipped in 12 mm embossed tape

• Marking: cathode, date code, type code

• Easy pick and place.

DESCRIPTION

DO-214AC surface mountable package with glass
passivated chip.

The well-defined void-free case is of a transfer-moulded
thermo-setting plastic.The small rectangular package has
two J bent leads.

lumns

MSA474

Top view Side view

cathode
band

ka

Fig.1 Simplified outline (DO-214AC) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

RRM

repetitive peak reverse voltage

ES1A − 50 V
ES1B − 100 V
ES1C − 150 V
ES1D − 200 V

V

R

continuous reverse voltage

ES1A − 50 V
ES1B − 100 V
ES1C − 150 V
ES1D − 200 V

V

RMS

root mean square voltage

ES1A − 35 V
ES1B − 70 V
ES1C − 105 V
ES1D − 140 V

I

F(AV)

average forward current averaged over any 20 ms period;

Ttp= 120 °C; see Fig.2

− 1A

I

FSM

non-repetitive peak forward current t = 8.3 ms half sine wave;

Tj=25°C prior to surge;
VR=V

RRMmax

− 25 A

T

stg

storage temperature −65 +175 °C

T

j

junction temperature See Fig.3 −65 +175 °C

2000 Feb 14 3

Philips Semiconductors Product specification

SMA ultra fast low-loss
controlled avalanche rectifiers

ES1 series

ELECTRICAL CHARACTERISTICS

Tj=25°C unless otherwise specified.

THERMAL CHARACTERISTICS

Notes

1. Device mounted on Al

2O3

printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm.

2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm. For more
information please refer to the

‘General Part of associated Handbook’

.

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V

F

forward voltage IF= 1 A; see Fig.4 − 1.1 V

I

R

reverse current VR=V

RRMmax

; see Fig.5 − 5 µA

V

R=VRRMmax

; Tj= 165 °C; see Fig.5 − 100 µA

t

rr

reverse recovery time when switched fromIF= 0.5 A to IR=1A;

measured at I

R

= 0.25 A; see Fig.9

− 25 ns

C

d

diode capacitance VR= 4 V; f = 1 MHz; see Fig.6 19 − pF

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-tp

thermal resistance from junction to tie-point; see Fig.7 27 K/W

R

th j-a

thermal resistance from junction to ambient note 1 100 K/W

note 2 150 K/W

2000 Feb 14 4

Philips Semiconductors Product specification

SMA ultra fast low-loss
controlled avalanche rectifiers

ES1 series

GRAPHICAL DATA

handbook, halfpage

0 40 200

2

1.5

0.5

0

1

80

Ttp (°C)

I

F(AV)

(A)

120 160

MCD821

Fig.2 Maximum permissible average forward

current as a function of tie-point
temperature (including losses due to
reverse leakage).

VR=V

RRMmax

; δ = 0.5; a = 1.57.

handbook, halfpage

0 100

VR (%V

Rmax

)

T

j

(°C)

200

0

100

50

MBK455

Device mounted as shown in Fig.8.
Solid line: Al2O3 printed-circuit board.
Dotted line: epoxy printed-circuit board.

Fig.3 Maximum permissible junction temperature

as a function of reverse voltage.

handbook, halfpage

32

VF (V)

I

F

(A)

10

MCD790

10

2

10

1

10

−1

10

−2

10

−3

Fig.4 Forward current as a function of forward

voltage; typical values.

Tj=25°C.

handbook, halfpage

1000 20 40

VR (%V

Rmax

)

I

R

(µA)

60 80

10

2

10

1

10

−1

10

−2

10

−3

MCD804

Tj = 165 °C

Tj = 25 °C

Fig.5 Reverse current as a function of reverse

voltage; typical values.