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Panasonic
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UNR5119
Datasheet
17 pgs241.02 Kb0

Panasonic UNR511Z, UNR511V, UNR511T, UNR511N, UNR511M Datasheet

...
Transistors with built-in Resistor
B
C
R1
R2
E
UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
Silicon PNP epitaxial planer transistor
For digital circuits
Features
■
Costs can be reduced through downsizing of the equipment and reduction of the number of parts.
S-Mini type package, allowing automatic insertion through tape packing and magazine packing.
Resistance by Part Number
■
Marking Symbol (R1)(R
UN5111 6A 10kΩ 10kΩ
UN5112 6B 22kΩ 22kΩ
UN5113 6C 47kΩ 47kΩ
UN5114 6D 10kΩ 47kΩ
UN5115 6E 10kΩ —
UN5116 6F 4.7kΩ —
UN5117 6H 22kΩ —
UN5118 6I 0.51Ω 5.1kΩ
UN5119 6K 1kΩ 10kΩ
UN5110 6L 47kΩ —
UN511D 6M 47kΩ 10kΩ
UN511E 6N 47kΩ 22kΩ
UN511F 6O 4.7kΩ 10kΩ
UN511H 6P 2.2kΩ 10kΩ
UN511L 6Q 4.7kΩ 4.7kΩ
UN511M EI 2.2kΩ 47kΩ
UN511N EW 4.7kΩ 47kΩ
UN511T EY 22kΩ 47kΩ
UN511V FC 2.2kΩ 2.2kΩ
UN511Z FE 4.7kΩ 22kΩ
)
2
2.1±0.1
1.25±0.1 0.4250.425
1
1.3±0.10.9±0.1
2.0±0.2
0.650.2 0.65
2
0.7±0.1
0.2±0.1
0 to 0.1
1 : Base 2 : Emitter EIAJ : SC–70 3 : Collector S–Mini Type Package
Internal Connection
3
Unit: mm
-0
+0.1
0.3
-0.05
+0.1
0.15
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter Symbol Ratings Unit
Collector to base voltage V Collector to emitter voltage Collector current I Total power dissipation P Junction temperature T Storage temperature T
CBO
V
CEO
C
T
j
stg
–50 V –50 V
–100 mA
150 mW 150 ˚C
–55 to +150 ˚C
1
UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
Transistors with built-in Resistor
Electrical Characteristics (Ta=25˚C)
■
Parameter Symbol Conditions min typ max Unit
I
Collector cutoff current
UN5111 – 0.5 UN5112/5114/511E/511D/511M/511N/511T UN5113 – 0.1
Emitter cutoff current
UN5115/5116/5117/5110 UN511F/511H –1.0 UN5119 –1.5 UN5118/511L/511V –2.0 UN511Z – 0.4
Collector to base voltage
UN511N/511T/511V/511Z –50
Collector to emitter voltage
UN511N/511T –50 UN5111 35 UN5112/511E 60 UN5113/5114/511M 80
Forward current transfer ratio
UN5115*/5116*/5117*/5110* UN511F/511D/5119/511H h UN5118/511L 20 UN511N/511T 80 400 UN511V 6 20 UN511Z 60 200
Collector to emitter saturation voltage
UN511V IC = –10mA, IB = –1.5mA – 0.25 Output voltage high level V Output voltage low level VCC = –5V, VB = –2.5V, RL = 1kΩ – 0.2
UN5113
UN511D VCC = –5V, VB = –10V, RL = 1kΩ – 0.2
UN511E VCC = –5V, VB = –6V, RL = 1kΩ – 0.2 Transition frequency
UN511Z VCB = –10V, IE = 1mA, f = 200MHz 150
UN5111/5114/5115 10 UN5112/5117/511T 22
UN5113/5110/511D/511E 47 Input resis­tance
UN5116/511F/511L/511N/511Z
UN5118 0.51
UN5119 1
UN511H/511M/511V 2.2
I
I
V
V
V
V
f
R
CBO
CEO
EBO
T
CBO
CEO
FE
CE(sat)
OH
OL
1
511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
VCB = –50V, IE = 0 – 0.1 µA VCE = –50V, IB = 0 – 0.5 µA
VEB = –6V, IC = 0
IC = –10µA, IE = 0
IC = –2mA, IB = 0
VCE = –10V, IC = –5mA 30
IC = –10mA, IB = – 0.3mA – 0.25
VCC = –5V, VB = – 0.5V, RL = 1kΩ –4.9 V
VCC = –5V, VB = –3.5V, RL = 1kΩ – 0.2
VCB = –10V, IE = 1mA, f = 200MHz 80
–50
–50
160 460
(–30%) 4.7 (+30%) kΩ
– 0.2
– 0.01
mA
V
V
V
V
MHz
* hFE rank classification (UN5115/5116/5117/5110)
Rank Q R S
h
FE
160 to 260 210 to 340 290 to 460
2
UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
Transistors with built-in Resistor
Electrical Characteristics (continued) (Ta=25˚C)
■
Parameter Symbol Conditions min typ max Unit
UN5111/5112/5113/511L 0.8 1.0 1.2
UN5114 0.17 0.21 0.25
UN5118/5119 0.08 0.1 0.12
UN511D 4.7
Resis­tance ratio
UN511E 2.14
UN511F/511T R1/R
UN511H 0.17 0.22 0.27
UN511M 0.047
UN511N 0.1
UN511V 1.0
UN511Z 0.21
511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
2
0.47
3
Transistors with built-in Resistor
Common characteristics chart
— Ta
P
T
240
)
200
mW
(
T
160
120
80
40
Total power dissipation P
0
0 16040 12080
Ambient temperature Ta (˚C
Characteristics charts of UN5111
)
UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
— V
I
C
–160
–140
)
–120
mA
(
C
–100
–80
–60
–40
Collector current I
–20
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
Cob — V
6
) pF
(
5
ob
4
3
CE
IB=–1.0mA
CB
–0.9mA
f=1MHz I
E
Ta=25˚C
Ta=25˚C
–0.8mA
–0.7mA –0.6mA –0.5mA
–0.4mA –0.3mA
–0.2mA
–0.1mA
=0
V
— I
CE(sat)
–100
)
V
(
–30
CE(sat)
–10
–3
–1
–0.3
–0.1
–0.03
Collector to emitter saturation voltage V
–0.01
–0.1 –0.3
)
25˚C
–25˚C
–1 –3 –10 –30 –100
Collector current IC (mA
IO — V
–10000
–3000
)
–1000
µA
(
O
–300
–100
C
IC/IB=10
Ta=75˚C
160
FE
120
80
40
Forward current transfer ratio h
0
–1 –3
)
IN
) V
(
IN
–100
–30
–10
–3
–1
VO=–5V Ta=25˚C
hFE — I
C
VCE=–10V
–10 –30 –100 –300 –1000
Collector current IC (mA
VIN — I
O
Ta=75˚C
25˚C
–25˚C
)
VO=–0.2V Ta=25˚C
2
1
Collector output capacitance C
0
–0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
4
–30
–10
Output current I
–
3
–1
–0.4
)
Input voltage VIN (V
–1.4–1.2–1.0–0.8–0.6
)
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
Output current IO (mA
–1 –3 –10 –30 –100
)
Transistors with built-in Resistor
Characteristics charts of UN5112
UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
— V
I
C
–160
–140
)
–120
mA
(
C
–100
–80
–60
–40
Collector current I
–20
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
Cob — V
6
) pF
(
5
ob
4
3
CE
IB=–1.0mA
–0.9mA
CB
–0.8mA
f=1MHz I
E
Ta=25˚C
Ta=25˚C
–0.7mA
–0.6mA
–0.5mA –0.4mA
–0.3mA
–0.2mA
–0.1mA
=0
V
— I
CE(sat)
–100
)
V
(
–30
CE(sat)
–10
–3
–1
–0.3
–0.1
–0.03
Collector to emitter saturation voltage V
–0.01
)
–25˚C
–0.1 –0.3
–1 –3 –10 –30 –100
Collector current IC (mA
IO — V
–10000
–3000
)
–1000
µA
(
O
–300
–100
25˚C
C
IC/IB=10
Ta=75˚C
400
FE
300
200
100
Forward current transfer ratio h
0
–1 –3
)
IN
) V
(
IN
–100
–30
–10
–3
–1
VO=–5V Ta=25˚C
hFE — I
C
VCE=–10V
Ta=75˚C
25˚C
–25˚C
–10 –30 –100 –300 –1000
Collector current IC (mA
VIN — I
O
VO=–0.2V Ta=25˚C
)
2
1
Collector output capacitance C
0 –0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
Characteristics charts of UN5113
— V
I
C
–160
–140
)
–120
mA
(
C
–100
–80
–60
–40
Collector current I
–20
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
CE
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
Ta=25˚C
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
–30
–10
Output current I
–3
–1
–0.4
)
–100
)
V
(
CE(sat)
–0.03
Collector to emitter saturation voltage V
–0.01
)
Input voltage VIN (V
V
CE(sat)
–30
–10
–3
–1
–0.3
–0.1
–0.1 –0.3
25˚C
–25˚C
–1 –3 –10 –30 –100
Collector current IC (mA
— I
–1.4–1.2–1.0–0.8–0.6
)
C
IC/IB=10
Ta=75˚C
)
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
–1 –3 –10 –30 –100
Output current IO (mA
hFE — I
400
FE
300
200
100
C
VCE=–10V
Forward current transfer ratio h
0
–1 –3
–10 –30 –100 –300 –1000
Collector current IC (mA
)
Ta=75˚C
25˚C
–25˚C
)
5
Transistors with built-in Resistor
UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
) pF
(
Cob — V
6
5
ob
4
3
2
1
CB
f=1MHz I
=0
E
Ta=25˚C
Collector output capacitance C
0 –0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
Characteristics charts of UN5114
— V
I
C
CE
–160
–140
)
–120
mA
(
C
–100
–80
–60
–40
Collector current I
–20
0
IB=–1.0mA
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
–0.9mA
–0.8mA
Ta=25˚C
–0.7mA
–0.6mA –0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
IO — V
IN
–10000
–3000
)
–1000
µA
(
O
–300
–100
–30
–10
Output current I
–3
–1
–0.4
)
–100
)
V
(
CE(sat)
–0.03
Collector to emitter saturation voltage V
–0.01
)
Input voltage VIN (V
V
CE(sat)
–30
–10
–3
–1
–0.3
–0.1
–0.1 –0.3
25˚C
–25˚C
–1 –3 –10 –30 –100
Collector current IC (mA
— I
VO=–5V Ta=25˚C
C
Ta=75˚C
–1.4–1.2–1.0–0.8–0.6
)
IC/IB=10
)
–100
–30
)
–10
V
(
IN
–3
–1
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
400
FE
300
200
100
Forward current transfer ratio h
0
–1 –3
VIN — I
O
VO=–0.2V Ta=25˚C
–1 –3 –10 –30 –100
Output current IO (mA
hFE — I
C
VCE=–10V
Ta=75˚C
25˚C
–25˚C
–10 –30 –100 –300 –1000
Collector current IC (mA
)
)
) pF
(
Cob — V
6
5
ob
4
3
2
1
CB
Collector output capacitance C
0 –0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
6
f=1MHz
=0
I
E
Ta=25˚C
IO — V
IN
–10000
–3000
)
–1000
µA
(
O
–300
–100
–30
–10
Output current I
–3
–1
–0.4
)
Input voltage VIN (V
VO=–5V Ta=25˚C
)
–1.4–1.2–1.0–0.8–0.6
–1000
–300
)
–100
V
(
IN
–30
–10
–3
Input voltage V
–1
–0.3
–0.1
–0.1 –0.3
VIN — I
O
VO=–0.2V Ta=25˚C
–1 –3 –10 –30 –100
Output current IO (mA
)
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