Panasonic UNR421L, UNR421K, UNR421F, UNR421E, UNR421D Datasheet
...
Transistors with built-in Resistor
B
C
R1
R2
E
UN4211/4212/4213/4214/4215/4216/4217/4218/
4219/4210/421D/421E/421F/421K/421L
Silicon NPN epitaxial planer transistor
For digital circuits
Features
■
●
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
●
New S type package, allowing supply with the radial taping.
Resistance by Part Number
■
(R1)(R
●
UN4211 10kΩ 10kΩ
●
UN4212 22kΩ 22kΩ
●
UN4213 47kΩ 47kΩ
●
UN4214 10kΩ 47kΩ
●
UN4215 10kΩ —
●
UN4216 4.7kΩ —
●
UN4217 22kΩ —
●
UN4218 0.51kΩ 5.1kΩ
●
UN4219 1kΩ 10kΩ
●
UN4210 47kΩ —
●
UN421D 47kΩ 10kΩ
●
UN421E 47kΩ 22kΩ
●
UN421F 4.7kΩ 10kΩ
●
UN421K 10kΩ 4.7kΩ
●
UN421L 4.7kΩ 4.7kΩ
)
2
4.0±0.2
marking
123
1.271.27
Internal Connection
3.0±0.215.6±0.5
0.1
+0.2
–
0.7±0.1
0.45
2.0±0.2
2.54±0.15
1 : Emitter
2 : Collector
3 : Base
New S Type Package
Unit: mm
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage
Collector current I
Total power dissipation P
Junction temperature T
Storage temperature T
CBO
V
CEO
C
T
j
stg
50 V
50 V
100 mA
300 mW
150 ˚C
–55 to +150 ˚C
1
UN4211/4212/4213/4214/4215/4216/4217/
Transistors with built-in Resistor
Electrical Characteristics (Ta=25˚C)
■
Parameter Symbol Conditions min typ max Unit
I
Collector cutoff current
UN4211 0.5
UN4212/4214/421E/421D 0.2
UN4213 0.1
Emitter
cutoff
current
UN4215/4216/4217/4210 I
UN421F/421K 1.0
UN4219 1.5
UN4218/421L 2.0
Collector to base voltage V
Collector to emitter voltage V
UN4211 35
Forward
current
transfer
ratio
UN4212/421E 60
UN4213/4214
UN4215*/4216*/4217*/4210*
UN421F/421D/4219 30
UN4218/421K/421L 20
Collector to emitter saturation voltage V
Output voltage high level V
Output voltage low level VCC = 5V, VB = 2.5V, RL = 1kΩ 0.2
UN4213/421K
UN421D VCC = 5V, VB = 10V, RL = 1kΩ 0.2
UN421E VCC = 5V, VB = 6V, RL = 1kΩ 0.2
Transition frequency f
UN4211/4214/4215/421K 10
UN4212/4217 22
Input
resistance
UN4213/421D/421E/4210
UN4216/421F/421L 4.7
UN4218 0.51
UN4219 1
UN4211/4212/4213/421L 0.8 1.0 1.2
UN4214 0.17 0.21 0.25
Resistance
ratio
UN4218/4219 0.08 0.1 0.12
UN421D R1/R
UN421E 1.7 2.14 2.6
UN421F 0.37 0.47 0.57
UN421K 1.7 2.13 2.6
CBO
I
CEO
EBO
CBO
CEO
h
FE
CE(sat)IC
OH
V
OL
T
R
1
2
4218/4219/4210/421D/421E/421F/421K/421L
VCB = 50V, IE = 0 0.1 µA
VCE = 50V, IB = 0 0.5 µA
VEB = 6V, IC = 0 0.01 mA
IC = 10µA, IE = 0 50 V
IC = 2mA, IB = 0 50 V
VCE = 10V, IC = 5mA
= 10mA, IB = 0.3mA 0.25 V
VCC = 5V, VB = 0.5V, RL = 1kΩ 4.9 V
VCC = 5V, VB = 3.5V, RL = 1kΩ 0.2
VCB = 10V, IE = –2mA, f = 200MHz 150 MHz
80
160 460
(–30%)
47
3.7 4.7 5.7
V
(+30%) kΩ
* hFE rank classification (UN4215/4216/4217/4210)
Rank Q R S
h
FE
160 to 260 210 to 340 290 to 460
2
Transistors with built-in Resistor
Common characteristics chart
— Ta
P
T
400
)
350
mW
(
300
T
250
200
150
100
50
Total power dissipation P
0
0 16020 60 100 14040 12080
Ambient temperature Ta (˚C
Characteristics charts of UN4211
)
UN4211/4212/4213/4214/4215/4216/4217/
4218/4219/4210/421D/421E/421F/421K/421L
— V
I
C
CE
160
140
)
120
mA
(
C
100
80
60
40
Collector current I
20
IB=1.0mA
0.9mA
0.8mA
0
012210486
Collector to emitter voltage VCE (V
Cob — V
6
)
pF
(
5
ob
4
3
CB
Ta=25˚C
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
f=1MHz
=0
I
E
Ta=25˚C
V
CE(sat)
100
)
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
Collector to emitter saturation voltage V
0.01
0.1 0.3
)
–25˚C
1 3 10 30 100
Collector current IC (mA
IO — V
10000
3000
)
1000
µA
(
O
300
100
— I
25˚C
IN
C
IC/IB=10
Ta=75˚C
VO=5V
Ta=25˚C
hFE — I
C
400
FE
300
200
100
VCE=10V
Ta=75˚C
25˚C
–25˚C
Forward current transfer ratio h
0
13
)
100
30
)
10
V
(
IN
3
1
10 30 100 300 1000
Collector current IC (mA
VIN — I
O
VO=0.2V
Ta=25˚C
)
2
1
Collector output capacitance C
0
0.1 0.3
1 3 10 30 100
Collector to base voltage VCB (V
30
10
Output current I
3
1
0.4
)
Input voltage VIN (V
1.41.21.00.80.6
)
0.3
Input voltage V
0.1
0.03
0.01
0.1 0.3
Output current IO (mA
1 3 10 30 100
)
3
Transistors with built-in Resistor
Characteristics charts of UN4212
UN4211/4212/4213/4214/4215/4216/4217/
4218/4219/4210/421D/421E/421F/421K/421L
— V
I
C
160
140
IB=1.0mA
)
0.9mA
120
mA
(
C
100
Collector current I
0.8mA
80
60
40
20
0
012210486
Collector to emitter voltage VCE (V
Cob — V
6
)
pF
(
5
ob
4
3
CE
CB
Ta=25˚C
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
f=1MHz
I
=0
E
Ta=25˚C
V
— I
CE(sat)
100
)
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
Collector to emitter saturation voltage V
0.01
)
–25˚C
0.1 0.3
1 3 10 30 100
Collector current IC (mA
IO — V
10000
3000
)
1000
µA
(
O
300
100
25˚C
C
IC/IB=10
Ta=75˚C
400
FE
300
200
100
Forward current transfer ratio h
0
13
)
IN
VO=5V
Ta=25˚C
100
30
)
10
V
(
IN
3
1
hFE — I
C
VCE=10V
Ta=75˚C
25˚C
–25˚C
10 30 100 300 1000
Collector current IC (mA
VIN — I
O
VO=0.2V
Ta=25˚C
)
2
1
Collector output capacitance C
0
0.1 0.3
1 3 10 30 100
Collector to base voltage VCB (V
Characteristics charts of UN4213
— V
I
C
CE
160
140
)
120
mA
(
C
100
80
60
40
Collector current I
20
0
012210486
IB=1.0mA
Collector to emitter voltage VCE (V
Ta=25˚C
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
30
10
Output current I
3
1
0.4
)
)
V
(
CE(sat)
0.03
Collector to emitter saturation voltage V
0.01
)
Input voltage VIN (V
V
CE(sat)
100
30
10
3
1
0.3
0.1
–25˚C
0.1 0.3
1 3 10 30 100
Collector current IC (mA
25˚C
— I
C
1.41.21.00.80.6
)
IC/IB=10
Ta=75˚C
)
0.3
Input voltage V
0.1
0.03
0.01
0.1 0.3
1 3 10 30 100
Output current IO (mA
hFE — I
C
400
350
FE
300
250
200
150
100
Forward current transfer ratio h
50
0
13
10 30 100 300 1000
VCE=10V
Collector current IC (mA
)
Ta=75˚C
25˚C
–25˚C
)
4
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