Panasonic UNR412Y, UNR412X, UNR4124, UNR4123, UNR4122 Datasheet
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Transistors with built-in Resistor
B
C
R1
R2
E
UN4121/4122/4123/4124/412X/412Y
Silicon PNP epitaxial planer transistor
For digital circuits
Features
■
●
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
●
New S type package, allowing supply with the radial taping.
Resistance by Part Number
■
(R1)(R
●
UN4121 2.2kΩ 2.2kΩ
●
UN4122 4.7kΩ 4.7kΩ
●
UN4123 10kΩ 10kΩ
●
UN4124 2.2kΩ 10kΩ
●
UN412X 0.27kΩ 5.0kΩ
●
UN412Y 3.1kΩ 4.6kΩ
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage
Collector current I
Total power dissipation P
Junction temperature T
Storage temperature T
CBO
V
CEO
C
T
j
stg
)
2
–50 V
–50 V
–500 mA
300 mW
150 ˚C
–55 to +150 ˚C
4.0±0.2
marking
123
1.271.27
Internal Connection
3.0±0.215.6±0.5
0.1
+0.2
–
0.7±0.1
2.0±0.2
0.45
2.54±0.15
1 : Emitter
2 : Collector
3 : Base
New S Type Package
Unit: mm
1
Transistors with built-in Resistor
Electrical Characteristics (Ta=25˚C)
■
UN4121/4122/4123/4124/412X/412Y
Parameter Symbol Conditions min typ max Unit
Collector cutoff current I
UN412X I
Collector cutoff current I
UN412X I
Emitter
cutoff
current
UN4121 –5
UN4122/412X/412Y I
UN4123/4124 –1
Collector to base voltage V
Collector to emitter voltage V
Forward
current
transfer
ratio
UN4121 40
UN4122/412Y
UN4123/4124 60
UN412X 20
Collector to emitter saturation voltage V
UN412X V
UN412Y V
Output voltage high level V
Output voltage low level V
Transition frequency f
CBO
CBO
CEO
CEO
EBO
CBO
CEO
h
FE
CE(sat)IC
CE(sat)IC
CE(sat)IC
OH
OL
T
VCB = –50V, IE = 0 –1
VCB = –50V, IE = 0 – 0.1
VCE = –50V, IB = 0 –1
VCE = –50V, IB = 0 – 0.5
VEB = –6V, IC = 0 –2 mA
IC = –10µA, IE = 0 –50 V
IC = –2mA, IB = 0 –50 V
VCE = –10V, IC = –100mA
50
= –100mA, IB = –5mA – 0.25
= –10mA, IB = – 0.3mA – 0.25 V
= –50mA, IB = –5mA – 0.15
VCC = –5V, VB = – 0.5V, RL = 500Ω –4.9 V
VCC = –5V, VB = –3.5V, RL = 500Ω – 0.2 V
VCB = –10V, IE = 50mA, f = 200MHz
80 MHz
UN4121/4124 2.2
Input
resistance
UN4122 4.7
UN4123 R
1
(–30%) 10 (+30%) kΩ
UN412X 0.27
UN412Y 3.1
Resistance ratio 0.8 1.0 1.2
UN4124
UN412X 0.043 0.054 0.065
R1/R
2
0.17 0.22 0.27
UN412Y 0.67
µA
µA
Common characteristics chart
PT — Ta
400
)
mW
(
300
T
200
100
Total power dissipation P
0
0 16020 60 100 14040 12080
Ambient temperature Ta (˚C
2
)
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