Panasonic UNR2154, UN2154 Datasheet

Transistors with built-in Resistor

2.8

+0.2
–0.3

1.5

+0.25
–0.05

0.65±0.15 0.65±0.15

3

1

2

0.950.95

1.9±0.2

0.4

+0.1

–0.05

1.1

+0.2

–0.1

0.8

0.4±0.2

0 to 0.1

0.16

+0.1

–0.06

1.45

0.1 to 0.3

2.9

+0.2

–0.05

B

C

E

R1(10kΩ

)

R2

(

47kΩ

)

UNR2154 (UN2154)

Silicon PNP epitaxial planer transistor

For digital circuits

Features

■

●

High forward current transfer ratio hFE.

●

Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.

●

Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter Symbol Ratings Unit

Collector to base voltage V
Collector to emitter voltage

V
Collector current I
Total power dissipation P
Junction temperature T
Storage temperature T

CBO

CEO

C

T

j

stg

–30 V
–30 V

–100 mA

200 mW
150 ˚C

–55 to +150 ˚C

Unit: mm

1:Base
2:Emitter EIAJ:SC-59
3:Collector Mini Type Package

Marking Symbol: EV

Internal Connection

Electrical Characteristics (Ta=25˚C)

■

Collector to base voltage V
Collector to emitter voltage V

Collector cutoff current

Emitter cutoff current I
Forward current transfer ratio h
Collector to emitter saturation voltage V
Output voltage high level V
Output voltage low level V
Input resistance R
Resistance ratio R1/R
Transition frequency f

Parameter Symbol Conditions min typ max Unit

IC = –10µA, IE = 0 –30 V
IC = –2mA, IB = 0 –30 V
VCB = –30V, IE = 0 – 0.1 µA
VCE = –30V, IB = 0 – 0.5 µA
VEB = –3V, IC = 0 – 0.1 mA
VCE = –10V, IC = –5mA 80 —

= –50mA, IB = – 0.33mA – 0.5 –1.2 V
VCC = –5V, VB = – 0.5V, RL = 1kΩ –4.9 V
VCC = –5V, VB = –2.5V, RL = 1kΩ – 0.2 V

–30% 10 +30% kΩ

2

0.213 —

VCB = –10V, IE = 1mA, f = 200MHz 80 MHz

Note) The part number in the parenthesis shows conventional part number.

CBO

CEO

I

CBO

I

CEO

EBO

FE

CE(sat)IC

OH

OL

1

T

1

Transistors with built-in Resistor UNR2154

PT — Ta IC — V

250

)

200

mW

(

T

150

100

50

Total power dissipation P

0

02040 8060 140120100 160

Ambient temperature Ta (˚C

hFE — I

C

300

250

200

150

Ta=75˚C

25˚C

–25˚C

FE

VCE=–10V

V

CE

–200

Ta=25˚C

–175

)

–150

mA

(

C

–125

–100

–75

–50

Collector current I

–25

0

0 –12–2 –10–4 –8–6

)

Collector to emitter voltage VCE (V

Cob — V

6

)

pF

(

5

ob

4

3

CB

IB=–1.0mA

–0.9mA
–0.8mA
–0.7mA

–0.6mA
–0.5mA

–0.4mA

–0.3mA

–0.2mA

–0.1mA

f=1MHz

=0

I

E

Ta=25˚C

)

–100

)

V

(

CE(sat)

–10

–1

–0.1

Collector to emitter saturation voltage V

–0.01

–1

Collector current IC (mA

–10000

)

–1000

µA

(

O

–100

— I

CE(sat)

Ta=75˚C

–10 –100 –1000

C

IC/IB=10

25˚C

–25˚C

)

IO — V

IN

VO=–5V
Ta=25˚C

100

50

Forward current transfer ratio h

0

–1

–10 –100 –1000

Collector current IC (mA

VIN — I

O

–100

)

–10

V

(

IN

–1

Input voltage V

–0.1

–0.01

–0.1

–1 –10 –100

VO=–0.2V
Ta=25˚C

Output current IO (mA

2

–10

Output current I

1

Collector output capacitance C

0

–1

)

Collector to base voltage VCB (V

–10 –100

)

–1

–0.4

Input voltage VIN (V

–1.4–1.2–1–0.8–0.6

)

)

2