Panasonic UNR212Y, UNR212X, UNR2124, UNR2123, UNR2122 Datasheet
...
Transistors with built-in Resistor
2.8
+0.2
–0.3
1.5
+0.25
–0.05
0.65±0.15 0.65±0.15
3
1
2
0.950.95
1.9±0.2
0.4
+0.1
–0.05
1.1
+0.2
–0.1
0.8
0.4±0.2
0 to 0.1
0.16
+0.1
–0.06
1.45
0.1 to 0.3
2.9
+0.2
–0.05
B
C
R1
R2
E
UN2121/2122/2123/2124/212X/212Y
Silicon PNP epitaxial planer transistor
For digital circuits
Features
■
●
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
●
Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.
Resistance by Part Number
■
Marking Symbol (R1)(R
●
UN2121 7A 2.2kΩ 2.2kΩ
●
UN2122 7B 4.7kΩ 4.7kΩ
●
UN2123 7C 10kΩ 10kΩ
●
UN2124 7D 2.2kΩ 10kΩ
●
UN212X 7I 0.27kΩ 5kΩ
●
UN212Y 7Y 3.1kΩ 4.6kΩ
)
2
1:Base
2:Emitter EIAJ:SC-59
3:Collector Mini Type Package
Unit: mm
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage
Collector current I
Total power dissipation P
Junction temperature T
Storage temperature T
Internal Connection
CBO
V
CEO
C
T
j
stg
–50 V
–50 V
–500 mA
200 mW
150 ˚C
–55 to +150 ˚C
1
Transistors with built-in Resistor
Electrical Characteristics (Ta=25˚C)
■
UN2121/2122/2123/2124/212X/212Y
Parameter Symbol Conditions min typ max Unit
Collector cutoff current I
UN212X I
Collector cutoff current I
UN212X I
Emitter
cutoff
current
UN2121 –5
UN2122/212X/212Y I
UN2123/2124 –1
Collector to base voltage V
Forward
current
transfer
ratio
UN2121 40
UN2122/212Y
UN2123/2124 60
UN212X 20
Collector to emitter saturation voltage V
UN212X V
UN212Y V
Output voltage high level V
Output voltage low level V
Transition frequency f
CBO
CBO
CEO
CEO
EBO
CBO
h
FE
CE(sat)IC
CE(sat)IC
CE(sat)IC
OH
OL
T
VCB = –50V, IE = 0 –1
VCB = –50V, IE = 0 – 0.1
VCE = –50V, IB = 0 –1
VCE = –50V, IB = 0 – 0.5
VEB = –6V, IC = 0 –2 mA
IC = –10µA, IE = 0 –50 V
VCE = –10V, IC = –100mA
50
= –100mA, IB = –5mA – 0.25
= –10mA, IB = – 0.3mA – 0.25 V
= –50mA, IB = –5mA – 0.15
VCC = –5V, VB = – 0.5V, RL = 500Ω –4.9 V
VCC = –5V, VB = –3.5V, RL = 500Ω – 0.2 V
VCB = –10V, IE = 50mA, f = 200MHz
200 MHz
UN2121 2.2
Input
resistance
UN2122 4.7
UN2123 R
1
(–30%) 10 (+30%) kΩ
UN212X 0.27
UN212Y 3.1
Resistance ratio 0.8 1.0 1.2
UN2124
UN212X 0.054
R1/R
2
0.22
UN212Y 0.67
µA
µA
Common characteristics chart
— Ta
P
T
250
)
200
mW
(
T
150
100
50
Total power dissipation P
0
02040 8060 140120100 160
Ambient temperature Ta (˚C
2
)
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