ON Semiconductor 2N6387, 2N6387G, 2N6388, 2N6388G Service Manual
2N6387, 2N6388
2N6388 is a Preferred Device
Plastic Medium-Power
Silicon Transistors
These devices are designed for general-purpose amplifier and
low-speed switching applications.
Features
•High DC Current Gain - h
= 2500 (Typ) @ IC = 4.0 Adc
FE
•Collector-Emitter Sustaining Voltage - @ 100 mAdc
V
CEO(sus)
= 60 Vdc (Min) - 2N6387
= 80 Vdc (Min) - 2N6388
•Low Collector-Emitter Saturation Voltage -
V
= 2.0 Vdc (Max) @ IC
CE(sat)
= 5.0 Adc - 2N6387, 2N6388
•Monolithic Construction with Built-In Base-Emitter Shunt Resistors
•TO-220AB Compact Package
•Pb-Free Packages are Available*
MAXIMUM RATINGS (Note 1)
Rating Symbol Value Unit
Collector-Emitter Voltage 2N6387
2N6388
Collector-Base Voltage 2N6387
2N6388
Emitter-Base Voltage V
Collector Current - Continuous
- Peak
Base Current I
Total Power Dissipation @ TC = 25_C
Derate above 25_C
Total Power Dissipation @ TA = 25_C
Derate above 25_C
Operating and Storage Junction,
Temperature Range
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data.
V
CEO
V
I
P
P
TJ, T
R
R
CB
EB
C
B
D
D
-65 to +150 °C
stg
q
JC
q
JA
60
80
60
80
5.0 Vdc
10
15
250 mAdc
65
0.52
2.0
0.016WW/°C
1.92
62.5
Vdc
Vdc
Adc
W
W/°C
_C/W
_C/W
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DARLINGTON NPN SILICON
POWER TRANSISTORS
8 AND 10 AMPERES
65 WATTS, 60 - 80 VOLTS
MARKING
DIAGRAM
4
TO-220AB
CASE 221A
STYLE 1
1
2
3
2N638x = Device Code
G = Pb-Free Package
A = Assembly Location
Y = Year
WW = Work Week
x = 7 or 8
ORDERING INFORMATION
Device Package Shipping
2N6387 TO-220AB 50 Units / Rail
2N6387G TO-220AB
2N6388 TO-220AB 50 Units / Rail
2N6388G TO-220AB
Preferred devices are recommended choices for future use
and best overall value.
(Pb-Free)
(Pb-Free)
2N638xG
AYWW
50 Units / Rail
50 Units / Rail
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
November, 2007 - Rev. 13
1 Publication Order Number:
2N6387/D
, POWER DISSIPATION (WATTS)
D
P
2N6387, 2N6388
TAT
C
80
4.0
60
3.0
T
C
40
2.0
T
20
1.0
0
20 40 80 100 120 160
0 60 140
Figure 1. Power Derating
A
T, TEMPERATURE (°C)
ELECTRICAL CHARACTERISTICS (T
= 25_C unless otherwise noted) (Note 2)
C
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Note 3)
(IC = 200 mAdc, IB = 0) 2N6387
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0) 2N6387
(VCE = 80 Vdc, IB = 0) 2N6388
Collector Cutoff Current
(VCE = 60 Vdc, V
(VCE - 80 Vdc, V
(VCE = 60 Vdc, V
(VCE = 80 Vdc, V
= 1.5 Vdc) 2N6387
EB(off)
= 1.5 Vdc) 2N6388
EB(off)
= 1.5 Vdc, TC = 125_C) 2N6387
EB(off)
= 1.5 Vdc, TC = 125_C) 2N6388
EB(off)
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = 5.0 Adc, VCE = 3.0 Vdc) 2N6387, 2N6388
(IC = 1 0 Adc, VCE = 3.0 Vdc) 2N6387, 2N6388
Collector-Emitter Saturation Voltage
(IC = 5.0 Adc, IB = 0.01 Adc) 2N6387, 2N6388
(IC = 10 Adc, IB = 0.1 Adc) 2N6387, 2N6388
Base-Emitter On Voltage
(IC = 5.0 Adc, VCE = 3.0 Vdc) 2N6387, 2N6388
(IC = 10 Adc, VCE = 3.0 Vdc) 2N6387, 2N6388
DYNAMIC CHARACTERISTICS
Small-Signal Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc, f
= 1.0 MHz)
test
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Small-Signal Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc, f = 1.0 kHz)
2. Indicates JEDEC Registered Data.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
2N6388
Symbol
V
CEO(sus)
I
CEO
I
CEX
I
EBO
h
FE
V
CE(sat)
V
BE(on)
|hfe|
C
ob
h
fe
Min
60
80
-
-
-
-
-
-
-
1000
100
-
-
-
-
20
-
1000
Max
-
-
1.0
1.0
300
300
3.0
3.0
5.0
20,000
-
2.0
3.0
2.8
4.5
-
200
-
Unit
Vdc
mAdc
mAdc
mAdc
mAdc
-
Vdc
Vdc
-
pF
-
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