ON Semiconductor 2N6349, 2N6344 Datasheet
2N6344, 2N6349
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full–wave silicon gate controlled solid–state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied main terminal voltage with positive
or negative gate triggering.
• Blocking Voltage to 800 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
• Gate Triggering Guaranteed in all Four Quadrants
• For 400 Hz Operation, Consult Factory
• Device Marking: Logo, Device T ype, e.g., 2N6344, Date Code
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TRIACS
8 AMPERES RMS
600 thru 800 VOLTS
MT2
MT1
G
MAXIMUM RATINGS (T
Rating
*Peak Repetitive Off–State Voltage
(TJ = –40 to +110°C, Sine Wave 50 to
60 Hz, Gate Open) 2N6344
*On–State RMS Current
(TC = +80°C)
Full Cycle Sine Wave 50 to 60 Hz
(TC = +90°C)
*Peak Non–Repetitive Surge Current
(One Full Cycle, Sine Wave 60 Hz,
TC = +25°C)
Preceded and followed by rated current
Circuit Fusing Consideration (t = 8.3 ms) I2t 40 A2s
*Peak Gate Power
(TC = +80°C, Pulse Width = 2 µs)
*Average Gate Power
(TC = +80°C, t = 8.3 ms)
*Peak Gate Current
(TC = +80°C, Pulse Width = 2.0 µs)
*Peak Gate Voltage
(TC = +80°C, Pulse Width = 2.0 µs)
*Operating Junction Temperature Range T
*Storage Temperature Range T
(1) V
and V
DRM
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
RRM
= 25°C unless otherwise noted)
J
Symbol Value Unit
(1)
2N6349
for all types can be applied on a continuous basis. Blocking
V
DRM,
V
RRM
I
T(RMS)
I
TSM
P
GM
P
G(AV)
I
GM
V
GM
J
stg
600
800
8.0
4.0
100 Amps
20 Watts
0.5 Watt
2.0 Amps
10 Volts
–40 to
+125
–40 to
+150
Volts
Amps
°C
°C
4
1
2
3
TO–220AB
CASE 221A
STYLE 4
PIN ASSIGNMENT
1
2
3 Gate
4
Main Terminal 1
Main Terminal 2
Main Terminal 2
ORDERING INFORMATION
Device Package Shipping
2N6344 TO220AB 500/Box
2N6349 TO220AB
Preferred devices are recommended choices for future use
and best overall value.
500/Box
Semiconductor Components Industries, LLC, 1999
March, 2000 – Rev . 1
1 Publication Order Number:
2N6344/D
2N6344, 2N6349
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
*Thermal Resistance, Junction to Case R
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds T
ELECTRICAL CHARACTERISTICS (T
Characteristic
OFF CHARACTERISTICS
*Peak Repetitive Blocking Current
(VD = Rated V
DRM
, V
; Gate Open) TJ = 25°C
RRM
ON CHARACTERISTICS
*Peak On–State Voltage
(ITM = "11 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p2%)
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
*MT2(+), G(+); MT2(–), G(–) TC = –40°C
*MT2(+), G(–); MT2(–), G(+) TC = –40°C
Gate Trigger Voltage (Continuous dc)
(VD = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
*MT2(+), G(+); MT2(–), G(–) TC = –40°C
*MT2(+), G(–); MT2(–), G(+) TC = –40°C
Gate Non–Trigger Voltage (Continuous dc)
(VD = Rated V
*MT2(+), G(+); MT2(–), G(–); MT2(+), G(–); MT2(–), G(–)
*Holding Current
(VD = 12 Vdc, Gate Open) TC = 25°C
(Initiating Current = "200 mA) *TC = –40°C
*Turn-On Time
(VD = Rated V
Rise Time = 0.1 µs, Pulse Width = 2 µs)
, RL = 10 k Ohms, TJ = 100°C)
DRM
, ITM = 11 A, IGT = 120 mA,
DRM
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage
(VD = Rated V
Gate Unenergized, TC = 80°C)
*Indicates JEDEC Registered Data.
, ITM = 11 A, Commutating di/dt = 4.0 A/ms,
DRM
= 25°C unless otherwise noted; Electricals apply in both directions)
C
Symbol Min Typ Max Unit
I
DRM
I
TJ = 100°C
RRM
V
TM
I
GT
V
GT
V
GD
I
H
t
gt
dv/dt(c) — 5.0 — V/µs
θJC
L
,
—
—
— 1.3 1.55 Volts
—
—
—
—
—
—
—
—
—
—
—
—
0.2 — —
—
—
— 1.5 2.0 µs
2.2 °C/W
260 °C
—
—
12
12
20
35
—
—
0.9
0.9
1.1
1.4
—
—
6.0
—
10
2.0
50
75
50
75
100
125
2.0
2.5
2.0
2.5
2.5
3.0
40
75
µA
mA
mA
Volts
Volts
mA
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2
Symbol Parameter
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
Holding Current
2N6344, 2N6349
Voltage Current Characteristic of Triacs
(Bidirectional Device)
on state
I
at V
RRM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
RRM
Quadrant 3
MainTerminal 2 –
V
TM
+ Current
I
H
V
I
H
off state
TM
Quadrant 1
MainTerminal 2 +
I
at V
DRM
DRM
+ Voltage
(+) MT2
Quadrant II Quadrant I
IGT – + I
Quadrant III Quadrant IV
All polarities are referenced to MT1.
With in–phase signals (using standard AC lines) quadrants I and III are used.
(–) I
GATE
(–) I
GATE
GT
MT1
REF
(–) MT2
GT
MT1
REF
–
MT2 NEGATIVE
(Negative Half Cycle)
(+) I
GATE
(+) I
GATE
(+) MT2
GT
MT1
REF
(–) MT2
GT
MT1
REF
GT
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3
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