3.1 - 51
OM55N10SA - OM75N06SC
3.1
OM75N06SA (T
C
= 25°C unless otherwise specified)
Avalanche Characteristics Min. Typ. Max. Units Test Conditions
I
AR
Avalanche Current 70 A (repetitive or
non-repetitive,T
J
= 25°C)
E
AS
Single Pulse Avalanche Energy 900 mJ (starting TJ= 25°C,
I
D
= IAR, VDD= 25 V)
E
AR
Repetitive Avalanche Energy 200 mJ (pulse width limited
by T
j max
, d< 1%)
I
AR
Avalanche Current 40 A (repetitive or
non-repetitive, T
J
= 100°C)
Electrical Characteristics - OFF
V
(BR)DSS
Drain-Source 60 V ID= 250 µA, VGS= 0
Breakdown Voltage
I
DSS
Zero Gate Voltage 250 µA VDS= Max. Rat.
Drain Current (V
GS
= 0) 1000 µA VDS= Max. Rat. x 0.8, TC= 125°C
I
GSS
Gate-Body Leakage ±100 nA V
GS
= ±20 V
Current (V
DS
= 0)
Electrical Characteristics - ON*
V
GS(th)
Gate Threshold Voltage 2 4 V VDS= VGS, ID= 250 µA
R
DS(on)
Static Drain-Source On 0.018 VGS= 10 V, ID= 40 A
Resistance 0.036 T
C
= 100°C
I
D(on)
On State Drain Current 75 A VDS> I
D(on)
x R
DS(on)max
, VGS= 10 V
Electrical Characteristics - Dynamic
g
fs
Forward Transconductance 25 S VDS> I
D(on)
x R
DS(on)max
, ID= 40 A
C
ies
Input Capacitance 4100 pF VDS= 25 V
C
oes
Output Capacitance 1800 pF VGS= 0
C
res
Reverse Transfer Capacitance 420 pF f = 1 mHz
Electrical Characteristics - Switching On
T
d(on)
Turn-On Time 190 nS VDD= 25 V, ID= 40 A
t
r
Rise Time 900 nS RG= 50 , VGS= 10 V
(di/dt)
on
Turn-On Current Slope 150 A/µS VDD= 25 V, ID= 40 A
R
G
= 50 , VGS= 10 V
Q
g
Total Gate Charge 130 nC VDD= 25 V, ID= 40 A, VGS= 10 V
Electrical Characteristics - Switching Off
T
r(Voff)
Off Voltage Rise Time 360 nS VDD= 40 V, ID= 75 A
t
f
Fall Time 280 nS RG= 50 , VGS= 10 V
t
cross
Cross-Over Time 600 nS
Electrical Characteristics - Source Drain Diode
I
SD
Source Drain Current 75 A
I
SDM
* Source Drain Current (pulsed) 300 A
V
SD
Forward On Voltage 1.5 V ISD= 75 A, VGS= 0
t
rr
Reverse Recovery Time 120 nS ISD= 75 A, di/dt = 100 A/µs
V
R
= 25 V
Q
rr
Reverse Recovery Charge 0.45 µC
I
RRM
Reverse Recovery Current 6.5 A
*Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%.
OM75N05SC (T
C
= 25°C unless otherwise specified)
Avalanche Characteristics Min. Typ. Max. Units Test Conditions
I
AR
Avalanche Current 70 A (repetitive or
non-repetitive,T
J
= 25°C)
E
AS
Single Pulse Avalanche Energy 900 mJ (starting TJ= 25°C,
I
D
= IAR, VDD= 25 V)
E
AR
Repetitive Avalanche Energy 200 mJ (pulse width limited
by T
j max
, d< 1%)
I
AR
Avalanche Current 40 A (repetitive or
non-repetitive, T
J
= 100°C)
Electrical Characteristics - OFF
V
(BR)DSS
Drain-Source 50 V ID= 250 µA, VGS= 0
Breakdown Voltage
I
DSS
Zero Gate Voltage 250 µA VDS= Max. Rat.
Drain Current (V
GS
= 0) 1000 µA VDS= Max. Rat. x 0.8, TC= 125°C
I
GSS
Gate-Body Leakage ±100 nA V
GS
= ±20 V
Current (V
DS
= 0)
Electrical Characteristics - ON*
V
GS(th)
Gate Threshold Voltage 2 4 V VDS= VGS, ID= 250 µA
R
DS(on)
Static Drain-Source On 0.016 VGS= 10 V, ID= 40 A
Resistance 0.032 T
C
= 100°C
I
D(on)
On State Drain Current 75 A VDS> I
D(on)
x R
DS(on)max
, VGS= 10 V
Electrical Characteristics - Dynamic
g
fs
Forward Transconductance 25 S VDS> I
D(on)
x R
DS(on)max
, ID= 40 A
C
ies
Input Capacitance 4100 pF VDS= 25 V
C
oes
Output Capacitance 1800 pF VGS= 0
C
res
Reverse Transfer Capacitance 420 pF f = 1 mHz
Electrical Characteristics - Switching On
T
d(on)
Turn-On Time 190 nS VDD= 20 V, ID= 40 A
t
r
Rise Time 900 nS RG= 50 , VGS= 10 V
(di/dt)
on
Turn-On Current Slope 150 A/µS VDD= 20 V, ID= 40 A
R
G
= 50 , VGS= 10 V
Q
g
Total Gate Charge 130 nC VDD= 20 V, ID= 40 A, VGS= 10 V
Electrical Characteristics - Switching Off
T
r(Voff)
Off Voltage Rise Time 360 nS VDD= 35 V, ID= 75 A
t
f
Fall Time 280 nS RG= 50 , VGS= 10 V
t
cross
Cross-Over Time 600 nS
Electrical Characteristics - Source Drain Diode
I
SD
Source Drain Current 75 A
I
SDM
* Source Drain Current (pulsed) 300 A
V
SD
Forward On Voltage 1.5 V ISD= 75 A, VGS= 0
t
rr
Reverse Recovery Time 120 nS ISD= 75 A, di/dt = 100 A/µs
V
R
= 20 V
Q
rr
Reverse Recovery Charge 0.45 µC
I
RRM
Reverse Recovery Current 6.5 A
*Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%.