OMNIREL OM75N05SA, OM75N05SC, OM60N10SC, OM55N10SA, OM75N06SC Datasheet
...
3.1
50V, 60V, And 100V Ultra Low R
DS(on)
Power MOSFETs In TO-254 And TO-258
Isolated Packages
LOW VOLTAGE, LOW R
DS(on)
POWER MOSFETS
IN HERMETIC ISOLATED PACKAGE
FEATURES
• Isolated Hermetic Metal Packages
• Ultra Low R
DS(on)
• Low Conductive Loss/Low Gate Charge
• Available Screened To MIL-S-19500, TX, TXV And S Levels
• Ceramic Feedthroughs available
DESCRIPTION
This series of hermetic packaged MOSFETs are ideally suited for low voltage
applications; battery powered voltage power supplies, motor controls, dc to dc
converters and synchronous rectification. The low conduction loss allows smaller
heat sinking and the low gate change simpler drive circuitry.
MAXIMUM RATINGS (Per Device)
OM75N06SCOM75N05SC
OM75N06SA
OM60N10SC
OM75N05SA
OM55N10SC
OM55N10SA
PART NO. VDS(V) R
DS(on)
() ID(A) Package
OM60N10SC 100 .025 60 TO-258AA
OM55N10SC 100 .030 55 TO-258AA
OM55N10SA 100 .035 55 TO-254AA
OM75N06SC 60 .016 75 TO-258AA
OM75N06SA 60 .018 75 TO-254AA
OM75N05SC 50 .016 75 TO-258AA
OM75N05SA 50 .018 75 TO-254AA
SCHEMATIC
4 11 R1
Supersedes 2 07 R0
PIN CONNECTION
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
Drain
Source
Gate
123
123
TO-254AA TO-258AA
3.1 - 47
3.1 - 48
OM55N10SA - OM75N06SC
3.1
ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise noted)
55N10SA 75N06SA 75N05SA
Parameter 60N10SC
55N10SC 75N06SC 75N05SC
Units
V
DS
Drain-Source Voltage 100 100 60 50 V
V
DGR
Drain-Gate Voltage (RGS= 1 M ) 100 100 60 50 V
ID@ TC= 25°C Continuous Drain Current
2
60 55 75 75 A
ID@ TC= 100°C Continuous Drain Current
2
37 33 45 45 A
I
DM
Pulsed Drain Current
1
180 180 225 225 A
PD@ TC= 25°C Maximum Power Dissipation 130 125 125 125 W
PD@ TC= 100°C Maximum Power Dissipation 55 50 50 50 W
Junction-To-Case Linear Derating Factor 1.00 1.00 1.00 1.00 W/°C
T
J
Operating and
T
stg
Storage Temperature Range
-55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
Lead Temperature (1/16" from case for 10 secs.) 300 300 300 300 °C
1 Pulse Test: Pulse width 300 µsec. Duty Cycle 1.5%.
2 Package Limited: SA I
D
= 25A & SC ID = 35A @ 25°C
THERMAL RESISTANCE
R
thJC
Junction-to-Case 1.0 °C/W
PACKAGE LIMITATIONS
Parameters TO254AA TO-258AA Unit
I
D
Continuous Drain Current 25 35 A
Linear Derating Factor, Junction-to-Ambient .020 .025 W/°C
R
thJA
Thermal Resistance, Junction-to-Ambient (Free Air Operation) 50 40 °C/W
.707
.697
.750
.500
.835
.815
.695
.685
.165
.155
.200 TYP.
.550
.530
.270
.240
.045
.035
.140 TYP.
.092 MAX.
.065
.055
.005
TO-258AA
MECHANICAL OUTLINE
.144 DIA.
.050
.040
.260
.249
.685
.665
.800
.790
.545
.535
.550
.510
.045
.035
.550
.530
.150 TYP.
.150 TYP.
.005
TO-254AA
Note: MOSFETs are also available in Z-Tab, dual and quad pak styles. Duals and quads available in non-gate versions only.
Please call the factory for more information.
PACKAGE OPTIONS
MOD PAK
Z-TAB
6 PIN SIP
3.1 - 49
OM55N10SA - OM75N06SC
3.1
OM60N10SC (T
C
= 25°C unless otherwise specified)
Avalanche Characteristics Min. Typ. Max. Units Test Conditions
I
AR
Avalanche Current 60 A (repetitive or
non-repetitive,T
J
= 25°C)
E
AS
Single Pulse Avalanche Energy 720 mJ (starting TJ= 25°C,
I
D
= IAR, VDD= 25 V)
E
AR
Repetitive Avalanche Energy 100 mJ (pulse width limited
by T
j max
, d< 1%)
I
AR
Avalanche Current 37 A (repetitive or
non-repetitive, T
J
= 100°C)
Electrical Characteristics - OFF
V
(BR)DSS
Drain-Source 100 V ID= 250 µA, VGS= 0
Breakdown Voltage
I
DSS
Zero Gate Voltage 250 µA VDS= Max. Rat.
Drain Current (V
GS
= 0) 1000 µA VDS= Max. Rat. x 0.8, TC= 125°C
I
GSS
Gate-Body Leakage ±100 nA V
GS
= ±20 V
Current (V
DS
= 0)
Electrical Characteristics - ON*
V
GS(th)
Gate Threshold Voltage 2 4 V VDS= VGS, ID= 250 µA
R
DS(on)
Static Drain-Source On 0.025 VGS= 10 V, ID= 30 A
Resistance 0.05 T
C
= 100°C
I
D(on)
On State Drain Current 60 A VDS> I
D(on)
x R
DS(on)max
, VGS= 10 V
Electrical Characteristics - Dynamic
g
fs
Forward Transconductance 25 S VDS> I
D(on)
x R
DS(on)max
, ID= 30 A
C
ies
Input Capacitance 4000 pF VDS= 25 V
C
oes
Output Capacitance 1100 pF VGS= 0
C
res
Reverse Transfer Capacitance 250 pF f = 1 mHz
Electrical Characteristics - Switching On
T
d(on)
Turn-On Time 90 nS VDD= 80 V, ID= 30 A
t
r
Rise Time 270 nS RG= 50 , VGS= 10 V
(di/dt)
on
Turn-On Current Slope 270 A/µS VDD= 80 V, ID= 30 A
R
G
= 50 , VGS= 10 V
Q
g
Total Gate Charge 120 nC VDD= 80 V, ID= 30 A, VGS= 10 V
Electrical Characteristics - Switching Off
T
r(Voff)
Off Voltage Rise Time 200 nS VDD= 80 V, ID= 30 A
t
f
Fall Time 210 nS RG= 50 , VGS= 10 V
t
cross
Cross-Over Time 410 nS
Electrical Characteristics - Source Drain Diode
I
SD
Source Drain Current 60 A
I
SDM
* Source Drain Current (pulsed) 240 A
V
SD
Forward On Voltage 1.6 V ISD= 60 A, VGS= 0
t
rr
Reverse Recovery Time 180 nS ISD= 60 A, di/dt = 100 A/µs
V
R
= 80 V
Q
rr
Reverse Recovery Charge 1.8 µC
I
RRM
Reverse Recovery Current 10 A
*Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%.
OM55N10SC (T
C
= 25°C unless otherwise specified)
Avalanche Characteristics Min. Typ. Max. Units Test Conditions
I
AR
Avalanche Current 55 A (repetitive or
non-repetitive,T
J
= 25°C)
E
AS
Single Pulse Avalanche Energy 600 mJ (starting TJ= 25°C,
I
D
= IAR, VDD= 25 V)
E
AR
Repetitive Avalanche Energy 100 mJ (pulse width limited
by T
j max
, d< 1%)
I
AR
Avalanche Current 37 A (repetitive or
non-repetitive, T
J
= 100°C)
Electrical Characteristics - OFF
V
(BR)DSS
Drain-Source 100 V ID= 250 µA, VGS= 0
Breakdown Voltage
I
DSS
Zero Gate Voltage 250 µA VDS= Max. Rat.
Drain Current (V
GS
= 0) 1000 µA VDS= Max. Rat. x 0.8, TC= 125°C
I
GSS
Gate-Body Leakage ±100 nA V
GS
= ±20 V
Current (V
DS
= 0)
Electrical Characteristics - ON*
V
GS(th)
Gate Threshold Voltage 2 4 V VDS= VGS, ID= 250 µA
R
DS(on)
Static Drain-Source On 0.03 VGS= 10 V, ID= 30 A
Resistance 0.06 T
C
= 100°C
I
D(on)
On State Drain Current 55 A VDS> I
D(on)
x R
DS(on)max
, VGS= 10 V
Electrical Characteristics - Dynamic
g
fs
Forward Transconductance 25 S VDS> I
D(on)
x R
DS(on)max
, ID= 30 A
C
ies
Input Capacitance 4000 pF VDS= 25 V
C
oes
Output Capacitance 1100 pF VGS= 0
C
res
Reverse Transfer Capacitance 250 pF f = 1 mHz
Electrical Characteristics - Switching On
T
d(on)
Turn-On Time 90 nS VDD= 80 V, ID= 30 A
t
r
Rise Time 270 nS RG= 50 , VGS= 10 V
(di/dt)
on
Turn-On Current Slope 270 A/µS VDD= 80 V, ID= 30 A
R
G
= 50 , VGS= 10 V
Q
g
Total Gate Charge 120 nC VDD= 80 V, ID= 30 A, VGS= 10 V
Electrical Characteristics - Switching Off
T
r(Voff)
Off Voltage Rise Time 200 nS VDD= 80 V, ID= 30 A
t
f
Fall Time 210 nS RG= 50 , VGS= 10 V
t
cross
Cross-Over Time 410 nS
Electrical Characteristics - Source Drain Diode
I
SD
Source Drain Current 55 A
I
SDM
* Source Drain Current (pulsed) 220 A
V
SD
Forward On Voltage 1.5 V ISD= 55 A, VGS= 0
t
rr
Reverse Recovery Time 180 nS ISD= 55 A, di/dt = 100 A/µs
V
R
= 80 V
Q
rr
Reverse Recovery Charge 1.8 µC
I
RRM
Reverse Recovery Current 11 A
*Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%.
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