OMNIREL OM75N05SA, OM75N05SC, OM60N10SC, OM55N10SA, OM75N06SC Datasheet

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3.1

50V, 60V, And 100V Ultra Low R

DS(on)

Power MOSFETs In TO-254 And TO-258 Isolated Packages

LOW VOLTAGE, LOW R

DS(on)

POWER MOSFETS

IN HERMETIC ISOLATED PACKAGE

FEATURES

• Isolated Hermetic Metal Packages

• Ultra Low R

DS(on)

• Low Conductive Loss/Low Gate Charge

• Available Screened To MIL-S-19500, TX, TXV And S Levels

• Ceramic Feedthroughs available

DESCRIPTION

This series of hermetic packaged MOSFETs are ideally suited for low voltage applications; battery powered voltage power supplies, motor controls, dc to dc converters and synchronous rectification. The low conduction loss allows smaller heat sinking and the low gate change simpler drive circuitry.

MAXIMUM RATINGS (Per Device)

OM75N06SCOM75N05SC

OM75N06SA

OM60N10SC OM75N05SA

OM55N10SC OM55N10SA

PART NO. VDS(V) R

DS(on)

() ID(A) Package

OM60N10SC 100 .025 60 TO-258AA OM55N10SC 100 .030 55 TO-258AA OM55N10SA 100 .035 55 TO-254AA OM75N06SC 60 .016 75 TO-258AA OM75N06SA 60 .018 75 TO-254AA OM75N05SC 50 .016 75 TO-258AA OM75N05SA 50 .018 75 TO-254AA

SCHEMATIC

4 11 R1 Supersedes 2 07 R0

PIN CONNECTION

Pin 1: Drain Pin 2: Source Pin 3: Gate

Drain

Source

Gate

123

TO-254AA TO-258AA

3.1 - 47

3.1 - 48

OM55N10SA - OM75N06SC

3.1

ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise noted)

55N10SA 75N06SA 75N05SA

Parameter 60N10SC

55N10SC 75N06SC 75N05SC

Units

Drain-Source Voltage 100 100 60 50 V

DGR

Drain-Gate Voltage (RGS= 1 M ) 100 100 60 50 V

ID@ TC= 25°C Continuous Drain Current

60 55 75 75 A

ID@ TC= 100°C Continuous Drain Current

37 33 45 45 A

Pulsed Drain Current

180 180 225 225 A PD@ TC= 25°C Maximum Power Dissipation 130 125 125 125 W PD@ TC= 100°C Maximum Power Dissipation 55 50 50 50 W Junction-To-Case Linear Derating Factor 1.00 1.00 1.00 1.00 W/°C T

Operating and

stg

Storage Temperature Range

-55 to 150 -55 to 150 -55 to 150 -55 to 150 °C

Lead Temperature (1/16" from case for 10 secs.) 300 300 300 300 °C

1 Pulse Test: Pulse width 300 µsec. Duty Cycle 1.5%. 2 Package Limited: SA I

= 25A & SC ID = 35A @ 25°C

THERMAL RESISTANCE

thJC

Junction-to-Case 1.0 °C/W

PACKAGE LIMITATIONS

Parameters TO254AA TO-258AA Unit

Continuous Drain Current 25 35 A Linear Derating Factor, Junction-to-Ambient .020 .025 W/°C

thJA

Thermal Resistance, Junction-to-Ambient (Free Air Operation) 50 40 °C/W

.707 .697

.750 .500

.835 .815

.695 .685

.165 .155

.200 TYP.

.550 .530

.270 .240

.045 .035

.140 TYP.

.092 MAX.

.065 .055

.005

TO-258AA

MECHANICAL OUTLINE

.144 DIA.

.050 .040

.260 .249

.685 .665

.800 .790

.545 .535

.550 .510

.045 .035

.550 .530

.150 TYP.

.005

TO-254AA

Note: MOSFETs are also available in Z-Tab, dual and quad pak styles. Duals and quads available in non-gate versions only.

Please call the factory for more information.

PACKAGE OPTIONS

MOD PAK

Z-TAB

6 PIN SIP

3.1 - 49

OM55N10SA - OM75N06SC

3.1

OM60N10SC (T

= 25°C unless otherwise specified)

Avalanche Characteristics Min. Typ. Max. Units Test Conditions

Avalanche Current 60 A (repetitive or

non-repetitive,T

= 25°C)

Single Pulse Avalanche Energy 720 mJ (starting TJ= 25°C,

= IAR, VDD= 25 V)

Repetitive Avalanche Energy 100 mJ (pulse width limited

by T

j max

, d< 1%)

Avalanche Current 37 A (repetitive or

non-repetitive, T

= 100°C)

Electrical Characteristics - OFF

(BR)DSS

Drain-Source 100 V ID= 250 µA, VGS= 0 Breakdown Voltage

DSS

Zero Gate Voltage 250 µA VDS= Max. Rat. Drain Current (V

= 0) 1000 µA VDS= Max. Rat. x 0.8, TC= 125°C

GSS

Gate-Body Leakage ±100 nA V

= ±20 V

Current (V

= 0)

Electrical Characteristics - ON*

GS(th)

Gate Threshold Voltage 2 4 V VDS= VGS, ID= 250 µA

DS(on)

Static Drain-Source On 0.025 VGS= 10 V, ID= 30 A Resistance 0.05 T

= 100°C

D(on)

On State Drain Current 60 A VDS> I

D(on)

x R

DS(on)max

, VGS= 10 V

Electrical Characteristics - Dynamic

Forward Transconductance 25 S VDS> I

D(on)

x R

DS(on)max

, ID= 30 A

ies

Input Capacitance 4000 pF VDS= 25 V

oes

Output Capacitance 1100 pF VGS= 0

res

Reverse Transfer Capacitance 250 pF f = 1 mHz

Electrical Characteristics - Switching On

d(on)

Turn-On Time 90 nS VDD= 80 V, ID= 30 A

Rise Time 270 nS RG= 50 , VGS= 10 V

(di/dt)

Turn-On Current Slope 270 A/µS VDD= 80 V, ID= 30 A

= 50 , VGS= 10 V

Total Gate Charge 120 nC VDD= 80 V, ID= 30 A, VGS= 10 V

Electrical Characteristics - Switching Off

r(Voff)

Off Voltage Rise Time 200 nS VDD= 80 V, ID= 30 A

Fall Time 210 nS RG= 50 , VGS= 10 V

cross

Cross-Over Time 410 nS

Electrical Characteristics - Source Drain Diode

Source Drain Current 60 A

SDM

* Source Drain Current (pulsed) 240 A

Forward On Voltage 1.6 V ISD= 60 A, VGS= 0

Reverse Recovery Time 180 nS ISD= 60 A, di/dt = 100 A/µs

= 80 V

Reverse Recovery Charge 1.8 µC

RRM

Reverse Recovery Current 10 A

*Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%.

OM55N10SC (T

= 25°C unless otherwise specified)

Avalanche Characteristics Min. Typ. Max. Units Test Conditions

Avalanche Current 55 A (repetitive or

non-repetitive,T

= 25°C)

Single Pulse Avalanche Energy 600 mJ (starting TJ= 25°C,

= IAR, VDD= 25 V)

Repetitive Avalanche Energy 100 mJ (pulse width limited

by T

j max

, d< 1%)

Avalanche Current 37 A (repetitive or

non-repetitive, T

= 100°C)

Electrical Characteristics - OFF

(BR)DSS

Drain-Source 100 V ID= 250 µA, VGS= 0 Breakdown Voltage

DSS

Zero Gate Voltage 250 µA VDS= Max. Rat. Drain Current (V

= 0) 1000 µA VDS= Max. Rat. x 0.8, TC= 125°C

GSS

Gate-Body Leakage ±100 nA V

= ±20 V

Current (V

= 0)

Electrical Characteristics - ON*

GS(th)

Gate Threshold Voltage 2 4 V VDS= VGS, ID= 250 µA

DS(on)

Static Drain-Source On 0.03 VGS= 10 V, ID= 30 A Resistance 0.06 T

= 100°C

D(on)

On State Drain Current 55 A VDS> I

D(on)

x R

DS(on)max

, VGS= 10 V

Electrical Characteristics - Dynamic

Forward Transconductance 25 S VDS> I

D(on)

x R

DS(on)max

, ID= 30 A

ies

Input Capacitance 4000 pF VDS= 25 V

oes

Output Capacitance 1100 pF VGS= 0

res

Reverse Transfer Capacitance 250 pF f = 1 mHz

Electrical Characteristics - Switching On

d(on)

Turn-On Time 90 nS VDD= 80 V, ID= 30 A

Rise Time 270 nS RG= 50 , VGS= 10 V

(di/dt)

Turn-On Current Slope 270 A/µS VDD= 80 V, ID= 30 A

= 50 , VGS= 10 V

Total Gate Charge 120 nC VDD= 80 V, ID= 30 A, VGS= 10 V

Electrical Characteristics - Switching Off

r(Voff)

Off Voltage Rise Time 200 nS VDD= 80 V, ID= 30 A

Fall Time 210 nS RG= 50 , VGS= 10 V

cross

Cross-Over Time 410 nS

Electrical Characteristics - Source Drain Diode

Source Drain Current 55 A

SDM

* Source Drain Current (pulsed) 220 A

Forward On Voltage 1.5 V ISD= 55 A, VGS= 0

Reverse Recovery Time 180 nS ISD= 55 A, di/dt = 100 A/µs

= 80 V

Reverse Recovery Charge 1.8 µC

RRM

Reverse Recovery Current 11 A

*Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%.

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