OMNIREL OM6020SA, OM6019SA, OM6018SA, OM6017SA Datasheet
OM6017SA
OM6018SA
POWER MOSFET IN HERMETIC ISOLATED
TO-254AA PACKAGE
100V Thru 500V, Up To 25 Amp, N-Channel
MOSFET In Hermetic Metal Package
FEATURES
• Isolated Hermetic Metal Package
• Fast Switching
• Low R
• Available Screened To MIL-S-19500, TX, TXV And S Levels
• Same as IRFM 150 - 450 Series
• Ceramic Feedthroughs Available
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits.
DS(on)
OM6019SA
OM6020SA
MAXIMUM RATINGS @ 25
4 11 R4
Supersedes 1 07 R3
°
C
PART NUMBER V
OM6017SA 100 V .065 25 A
OM6018SA 200 V .100 25 A
OM6019SA 400 V .33 13 A
OM6020SA 500 V .42 11 A
DS
R
DS(on)
I
D
SCHEMATIC POWER RATING
3.1 - 85
3.1
3.1
G
D
S
G
D
S
OM6017SA - OM6020SA
ELECTRICAL CHARACTERISTICS: (T
= 25°C unless otherwise noted) ELECTRICAL CHARACTERISTICS: (TC= 25°C unless otherwise noted)
C
STATIC P/N OM6017SA STATIC P/N OM6018SA
Parameter Min. Typ. Max. Units Test Conditions Parameter Min. Typ. Max. Units Test Conditions
BV
Drain-Source Breakdown
3.1 - 86
DSS
Voltage I
V
Gate-Threshold Voltage 2.0 4.0 V VDS= VGS, ID= 250 mAV
GS(th)
I
Gate-Body Leakage Forward 100 nA VGS= +20 V I
GSSF
I
Gate-Body Leakage Reverse - 100 nA VGS= -20 V I
GSSR
I
Zero Gate Voltage Drain 0.1 0.25 mA VDS= Max. Rat., VGS= 0 I
DSS
Current
I
On-State Drain Current
D(on)
V
Static Drain-Source On-State
DS(on)
R
DS(on)
1
Voltage
Static Drain-Source On-State
Resistance
R
Static Drain-Source On-State
DS(on)
Resistance
1
1
1
100 V
0.2 1.0 mA
35 A VDS 2 V
1.1 1.3 V V
0.55 0.65 V
.09 0.11
DYNAMIC DYNAMIC
g
Forward Transductance
fs
C
Input Capacitance 2700 pF VGS= 0 C
iss
C
Output Capacitance 1300 pF VDS= 25 V C
oss
C
Reverse Transfer Capacitance 470 pF f = 1 MHz C
rss
t
Turn-On Delay Time 28 ns VDD= 30 V, ID@ 20 A t
d(on)
t
Rise Time 45 ns Rg= 5.0 W, VG= 10V t
r
t
Turn-Off Delay Time 100 ns t
d(off)
t
Fall Time 50 ns t
f
1
9.0 S(W ) VDS 2 V
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
Continuous Source Current
S
(Body Diode) symbol showing (Body Diode)
I
SM
Source Current
1
(Body Diode) Junction rectifier. (Body Diode) Junction rectifier.
VSDDiode Forward Voltage
t
Reverse Recovery Time 400 ns
rr
1
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
- 40 A
- 160 A
- 2.5 V TC= 25 C, IS= -40 A, VGS= 0 VSDDiode Forward Voltage
VGS= 0, BV
= 250 mA Voltage ID= 250 mA
D
V
= 0.8 Max. Rat., VGS= 0, Current
DS
T
= 125° C TC= 125° C
C
GS
GS
, VGS= 10 V I
DS(on)
= 10 V, ID= 20 A
= 10 V, ID= 20 A
VGS= 10 V, ID= 20 A, R
TC= 125 C Resistance
(W)
(MOSFET switching times are
essentially independent of
operating temperature.)
Modified MOSPOWER I
the integral P-N I
T
J
dl
F
, ID= 20 A g
DS(on)
= 150 C, IF= IS,
/ds = 100 A/ms dlF/ds = 100 A/ms
Drain-Source Breakdown
DSS
Gate-Threshold Voltage 2.0 4.0 V VDS= VGS, ID= 250 mA
GS(th)
Gate-Body Leakage Forward 100 nA VGS= + 20 V
GSSF
Gate-Body Leakage Reverse -100 nA VGS= - 20 V
GSSR
Zero Gate Voltage Drain 0.1 0.25 mA VDS= Max. Rat., VGS= 0
DSS
200 V
0.2 1.0 mA
On-State Drain Current
D(on)
V
Static Drain-Source On-State
DS(on)
R
DS(on)
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
S
SM
t
rr
1
Voltage
Static Drain-Source On-State
Resistance
1
Static Drain-Source On-State
1
Forward Transductance
Input Capacitance 2400 pF VGS= 0
Output Capacitance 600 pF VDS= 25 V
Reverse Transfer Capacitance 250 pF f = 1 MHz
Turn-On Delay Time 25 ns VDD= 75 V, ID@ 16 A
Rise Time 60 ns Rg= 5.0 W,VGS= 10V
Turn-Off Delay Time 85 ns
Fall Time 38 ns
Continuous Source Current
Source Current
Reverse Recovery Time 350 ns
1
30 A VDS 2 V
1.36 1.60 V V
.085 .100 V
0.14 0.17
1
10.0 S(W ) VDS 2 V
- 30 A
1
1
- 120 A
- 2 V TC= 25 C, IS= -30 A, VGS= 0
VGS= 0,
VDS= 0.8 Max. Rat., VGS= 0,
, VGS= 10 V
DS(on)
= 10 V, ID= 16 A
GS
= 10 V, ID= 16 A
GS
VGS= 10 V, ID= 16 A,
TC= 125 C
(W)
(MOSFET switching times are
essentially independent of
operating temperature.)
Modified MOSPOWER
symbol showing
the integral P-N
T
J
, ID= 16 A
DS(on)
= 150 C, IF= IS,
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