REFERENCE FREQUENCY 16.368 MHz, 2ND IF FREQUENCY 4.092 MHz
RF/IF FREQUENCY DOWN-CONVERTER +
PLL FREQUENCY SYNTHESIZER IC FOR GPS RECEIVER
DESCRIPTION
The µPB1005K is a silicon monolithic integrated circuit for GPS receiver. This IC is designed as double
conversion RF block integrated RF/IF down-converter + PLL frequency synthesizer on 1 chip.
The µPB1005K features 36-pin plastic QFN, fixed prescaler and supply voltage. The 36-pin plastic QFN package
is suitable for high density surface mounting. The fixed division internal prescaler is needless to input serial counter
data. Supply voltage is 3 V. Thus, the µPB1005K can make RF block fewer components and lower power
consumption.
This IC is manufactured using NEC’s 20 GHz fT NESATTMIII silicon bipolar process. This process uses direct
silicon nitride passivation film and gold electrodes. These materials can protect the chip surface from pollution and
prevent corrosion/migration. Thus, this IC realizes excellent performance, uniformity and reliability.
FEATURES
• Double conversion: f
• Integrated RF block: RF/IF frequency down-converter + PLL frequency synthesizer
STANDARD CHARACTERISTICS (Unless otherwise specified TA = +25
ParameterSymbolConditionsReferenceUnit
RF Down-converter Block (P
LO Leakage to IF PinLO
LO Leakage to RF PinLO
Input 3rd Order Intercept
Point
IF Down-converter Block (1st LO oscillating, ZS = 50 Ω, ZL = 2 kΩ)
LO Leakage to 2nd IFLO
LO Leakage to 1st IFLO
Input 3rd Order Intercept
Point
VCO Block
Phase NoiseC/NPLL Loop, ∆1kHz of VCO wave
1stLOin
= −10 dBm, ZS = ZL = 50 Ω)
if
1stLOin
f
rf
1stLOin
f
IIP3RFf
2ndif
1stif
IIP3IFf
RFin
1 = 1 600 MHz, f
1stLOin
f
2ndLOin
f
2ndLOin
f
1stIFin
2ndLOin
f
= 1 636.80 MHz
= 1 636.80 MHz
= 1 660 MHz
= 65.472 MHz
= 65.472 MHz
1 = 61.38 MHz, f
= 65.472 MHz
RFin
2 = 1605 MHz
1stIFIn
2 = 61.48 MHz
C, VCC = 3.0 V)
°°°°
30dBm
−
30dBm
−
13dBm
−
20dBm
−
40dBm
−
34dBm
−
78dBc/Hz
−
6
Preliminary Data Sheet P14016EJ1V0DS00
PIN EXPLANATION
µµµµ
PB1005K
Pin
No.
Pin Name
35 RX-MIXout
36 VCC (RF-MIX)2.7 to 3.3
1RF-MIXin
2GND (RF-MIX)0
CC
3V
(1stLO-OSC)
41stLO-OSC1
51stLO-OSC2
6GND
(1stLO-OSC)
7VCC (phase
detector)
8N.C.
9PD-Vout3Pull-up
10 PD-Vout2
11 PD-Vout1Pull-up
12 GND (phase
detector)
Applied
Voltage
(V)
2.7 to 3.3
0
2.7 to 3.3
with
resistor
with
resistor
0
Pin
Voltage
(V)
1.68Output pin of RF mixer.
1.20Input pin of RF mixer.
1.88
1.88
Output in
accordance
with phase
difference
Function and ApplicationInternal E qui valent Circuit
1st IF filter mus t be inserted
between pin 33 & 35.
Supply voltage pin of RF mixer
block. This pin must be
decoupled with capacitor
(example: 1 000 pF).
1 575.42 MHz band pass filter
can be inserted between pin 1
and external LNA.
Ground pin RF mixer.
Supply voltage pin of dif ferential
amplifier for 1st LO oscillator
circuit.
Pin 4 & 5 are each base pin of
differential amplifi er f or 1st LO
oscillator. These pins should be
equipped with LC and varactor
to oscillate on 1 636.80 MHz as
VCO.
Ground pin of differential
amplifier for 1st LO oscillator
circuit.
Supply voltage pin of phase
detector and active loop f i l ter.
Non connection
Pins of active loop filter for
tuning voltage output.
The active transist ors
configured with darlington pair
are built on chip. Pin 11 should
be pulled down with external
resistor. Pin 9 to 10 s houl d be
equipped with external RC in
order to adjust dumping factor
and cutoff frequency. Thi s
tuning voltage output must be
connected to varactor diode of
1st LO-OSC.
Ground pin of phase detector +
active loop filter.
36
1stLO
-OSC
1
3
45
6
7
PD
12
V
35
2
CC
RF-MIX or
Prescaler
input
10
9
11
Preliminary Data Sheet P14016EJ1V0DS00
7
µµµµ
PB1005K
Pin
13 V
Pin Name
CC
No.
(divider block)
14 LOout
15 GND
(divider block)
16N.C.
17REFin
18 N.C.
CC
19V
(reference
block)
20REFout
21N.C.
222ndIFout
CC
23V
(2ndIF-AMP)
242ndIF bypass
252ndIFin2
262ndIFin1
27GND
(2ndIF-AMP)
Applied
Voltage
(V)
2.7 to 3.3
0
Pin
Voltage
(V)
2.08Monitor pin of comparison
1.96Input pin of reference frequency.
2.7 to 3.3
1.65Output pin of reference
2.7 to 3.3
0
1.56Output pin of 2nd IF amplifier.
2.30Bypass pin of 2nd IF amplif i er
2.35Pin of 2nd IF amplifier input 2.
2.35Pin of 2nd IF amplifier input 1.
Function and ApplicationInternal E qui valent Circuit
Supply voltage pin of
prescalers.
frequency at phase detect or.
Ground pin of prescalers +
LOout amplifier
Non connection
13
1st
LO
OSC
15
IF
MIX
÷
25÷8
PDPD
This pin should be equipped
with external 16.368 MHz
oscillator (example: TCXO).
19
Non connection
Supply voltage pin of
input/output amplifiers in
P-P
17
15
reference block.
frequency. The frequency from
pin 17 can be took out as 1 V
swing.
Non connection
This pin output 4.092 MHz
clipped sinewave.
This pin should be equipped
with external inverter to adj ust
level to next stage on us er’ s
23
system.
Supply voltage pin of 2nd IF
24
amplifier.
26
input 1. This pin should be
25
grounded through capacitor.
This pin should be grounded
27
through capacitor.
2nd IF filter can be insert ed
between pin 26 & 28.
Ground pin of 2nd IF amplifier.
14
÷
2
Ref.
20
PD
22
8
Preliminary Data Sheet P14016EJ1V0DS00
µµµµ
PB1005K
Pin
No.
Pin Name
28IF-MIXout
29N.C.
30VGC (IF-MIX)0 to 3.3
31VCC (IF-MIX)2.7 to 3. 3
32N.C.
33IF-MIXin
34GND (IF-MIX)0
Applied
Voltage
(V)
Pin
Voltage
(V)
1.15Output pin from IF mixer.
2.00Input pin of IF mixer.
Function and ApplicationInternal E qui valent Circuit
IF mixer output signal goes
through gain control amplifier
before this emitter fol l ower
output port.
Non connection
Gain control voltage pin of I F
mixer output amplifier. This
voltage performs forward cont rol
GC
(V
up → Gain down).
Supply voltage pin of IF m i xer,
gain control amplifier and
emitter follower transistor.
Non connection
Ground pin of IF mixer.
30
31
33
2nd
LO
34
Caution Ground pattern on the board must be formed as wide as possible to minimize ground
impedance.
28
Preliminary Data Sheet P14016EJ1V0DS00
9
TEST CIRCUIT
µµµµ
PB1005K
Spectrum
Analyzer
To get maximum gain.
Apply 1.0V MAX.
CC
50 Ω
Signal Generator
Spectrum
Analyzer
CC
50 Ω
Signal Generator
Signal Generator
C21R6
C22
C23V
C1
C2
C3V
÷
V-Di
L
25
C7
Spectrum
Analyzer
R5
C16C18
÷
8
C8
R2
50 Ω
27
28
29
30
31
32
33
34
35
36
123456789
C4
V
CC
V
CC
C17
C19C20
2625242322212019
C6
R1
C5
Osilloscope
C15
V
CC
PD
V
CC
C14
18
17
C13
C10
C9
16
15
14
13
12
11
10
C12
C11
R4
÷
2
R3
50 Ω
Signal Generator
Osilloscope
V
CC
Spectrum Analyzer : measure frequency
Oscilloscope : measure output voltage swing
Component List
FormSymbolValue
Chip capacitor
Chip resistor
Varactor DiodeV-Di1SV285
Chip InductorL3.9 nH
C1 to C5, C8, C11 to C15, C17, C18, C221 000 pF
C6, C724 pF (UJ)
C91800 pF
C1033 nF
C1910 000 pF
C231 µF
C16, C200.1 µF
C210.01
R1, R24.7 k
R36.2 k
R41.2 k
R5, R61.95 k
F
µ
Ω
Ω
Ω
Ω
10
Preliminary Data Sheet P14016EJ1V0DS00
PACKAGE DIMENSIONS
36 PIN PLASTIC QFN (UNIT: mm)
6.2±0.2
µµµµ
PB1005K
4–C0.5
Pin36
Pin1
6.0±0.2
6.2±0.2
6.0±0.2
6.0±0.2
1.0MAX
6.2±0.2
6.2±0.2
6.0±0.2
0.22±0.050.6±0.1
Preliminary Data Sheet P14016EJ1V0DS00
0.5±0.025
Bottom View
11
µµµµ
PB1005K
NOTE ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices.
(2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent abnormal oscillation).
(3) Keep the track length of the ground pins as short as possible.
(4) Connect a bypass capacitor (example: 1 000 pF) to the VCC pin.
(5) Frequency signal input/output pins must be each coupled with external capacitor for DC cut.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered under the following recommended conditions. For soldering methods and
conditions other than those recommended below, contact your NEC sales representative.
Soldering MethodSoldering ConditionsRecommended Condition Sy m bol
Infrared ReflowPac kage peak temperature: 235 °C or below
Time: 30 seconds or less (at 210 °C)
Count: 2, Exposure limi t
Partial HeatingPin temperature: 300 °C
Time: 3 seconds or less (per side of device)
Exposure limit
After opening the dry pack, keep it in a place below 25 °C and 65 % RH for the allowable storage period.
Note
Note
: None
Note
: None
IR35-00-2
–
Caution Do not use different soldering methods together (except for partial heating).
For details of recommended soldering conditions for surface mounting, refer to information document
NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.
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confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
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rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
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the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
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"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
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The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98. 8
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