NEC Electronics Inc UPA1454H Datasheet
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DATA SHEET
SILICON TRANSISTOR ARRAY
μPA1454
NPN SILICON POWER TRANSISTOR ARRAY
LOW SPEED SWITCHING USE
INDUSTRIAL USE
DESCRIPTION
The μPA1454 is NPN silicon epitaxial Power Transistor Array that built in 4 circuits designed for driving solenoid, relay, lamp and so on.
FEATURES
•Easy mount by 0.1 inch of terminal interval.
•High hFE. Low VCE(sat).
hFE = 800 to 3200 (at IC = 1 A) VCE(sat) = 1.0 V MAX. (at IC = 3 A)
ORDERING INFORMATION
Part Number |
Package |
Quality Grade |
μPA1454H |
10 Pin SIP |
Standard |
Please refer to "Quality grade on NEC Semiconductor Devices"
(Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)
Collector to Base Voltage |
VCBO |
100 |
V |
Collector to Emitter Voltage |
VCEO |
100 |
V |
Emitter to Base Voltage |
VEBO |
7 |
V |
Collector Current (DC) |
IC(DC) |
5 |
A/unit |
Collector Current (pulse) |
IC(pulse)* |
10 |
A/unit |
Base Current (DC) |
IB(DC) |
1.0 |
A/unit |
Total Power Dissipation |
PT1** |
3.5 |
W |
Total Power Dissipation |
PT2*** |
28 |
W |
Junction Temperature |
Tj |
150 |
˚C |
Storage Temperature |
Tstg –55 to +150 |
˚C |
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*PW ≤ 300 μs, Duty Cycle ≤ 10 %
**4 Circuits, Ta = 25 ˚C
***4 Circuits, Tc = 25 ˚C
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PACKAGE DIMENSION |
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(in millimeters) |
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26.8 MAX. |
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4.0 |
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10 |
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2.5 |
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10 MIN. |
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2.54 |
1.4 |
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1.4 |
0.6 ±0.1 |
0.5 ±0.1 |
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1 2 3 4 5 6 7 8 910 |
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CONNECTION DIAGRAM |
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3 |
5 |
7 |
9 |
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2 |
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4 |
6 |
8 |
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1 |
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10 |
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PIN No. |
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2, 4, 6, 8: Base (B) |
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3, 5, 7, 9: Collector (C) |
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1, 10 |
: Emitter (E) |
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The information in this document is subject to change without notice.
Document No. IC-3520
Date Published September 1994 P
Printed in Japan
© 
1994
μPA1454
ELECTRICAL CHARACTERISTICS (Ta = 25 ˚C)
CHARACTERISTIC |
SYMBOL |
MIN. |
TYP. |
MAX. |
UNIT |
TEST CONDITIONS |
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Collector Leakage Current |
ICBO |
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10 |
μA |
VCB = 100 V, IE = 0 |
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Emitter Leakage Current |
IEBO |
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10 |
μA |
VEB = 7 |
V, IC = 0 |
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DC Current Gain |
hFE1 |
* |
800 |
1300 |
3200 |
— |
VCE = 5 |
V, IC = 1 |
A |
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DC Current Gain |
hFE2 |
* |
500 |
1000 |
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— |
VCE = 5 |
V, IC = 3 |
A |
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Collector Saturation Voltage |
VCE(sat) |
* |
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1.0 |
V |
IC = 3 A, IB = 30 mA |
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Base Saturation Voltage |
VBE(sat) |
* |
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1.2 |
V |
IC = 3 A, IB = 30 mA |
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Turn On Time |
ton |
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1 |
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μs |
IC = 3 A |
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IB1 = –IB2 = 30 mA |
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Storage Time |
tstg |
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3 |
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μs |
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. |
. |
16.7 Ω |
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VCC =. 50 V, RL =. |
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Fall Time |
tf |
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1.5 |
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μs |
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See test circuit |
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* PW ≤ 350 μs, Duty Cycle ≤ 2 % / pulsed
SWITCHING TIME TEST CIRCUIT
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. |
Ω |
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RL =. 16.7 |
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VIN |
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IC |
Base Current |
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IB1 |
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1B1 |
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Wave Form |
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IB2 |
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T.U.T. |
. |
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1B2 |
VCC =. 50 V |
90 % |
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Collector |
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PW |
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Current |
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IC |
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Wave Form |
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. |
μs |
. |
10 % |
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PW =. 50 |
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Duty Cycle ≤ 2 % |
VBB =. –5 V |
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ton |
tstg |
tf |
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